Structural and photocurrent-voltage characteristics of tungsten oxide thin films on p-GaAs

Ki Hyun Yoon, Jeong Won Lee, Yong Soo Cho, Dong Heon Kang

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

An n-type WO3 thin film on a p-type GaAs substrate has been investigated in terms of its structural, electrical, and photocurrent-voltage characteristics. Crystallization of the monoclinic phases of WO3 occurred at 400°C as identified by a glancing angle x-ray diffractometer. Above 400°C, small traces of gallium oxide (Ga2O3)were observed along with higher intensities of the monoclinic peaks. The formation of Ga2O3 was confirmed by a depth profile analysis using an Auger electron spectrometer. Electrical resistivity measured by the van der Pauw method was influenced by the crystalline nature and the interfacial states induced by the diffused atoms from each side of WO3 and GaAs. A high photocurrent density of 7.5 mA/ cm2 at -1.0 V (vs SCE) appeared at the crystalline WO3 on p-type GaAs at 400°C resulting from effective carrier movement through the interfaces.

Original languageEnglish
Pages (from-to)572-574
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number4
DOIs
Publication statusPublished - 1996 Dec 1

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tungsten oxides
photocurrents
gallium oxides
electric potential
thin films
diffractometers
spectrometers
crystallization
electrical resistivity
profiles
atoms
electrons
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Yoon, Ki Hyun ; Lee, Jeong Won ; Cho, Yong Soo ; Kang, Dong Heon. / Structural and photocurrent-voltage characteristics of tungsten oxide thin films on p-GaAs. In: Applied Physics Letters. 1996 ; Vol. 68, No. 4. pp. 572-574.
@article{fdca4adf9a614164b1587ecff8579643,
title = "Structural and photocurrent-voltage characteristics of tungsten oxide thin films on p-GaAs",
abstract = "An n-type WO3 thin film on a p-type GaAs substrate has been investigated in terms of its structural, electrical, and photocurrent-voltage characteristics. Crystallization of the monoclinic phases of WO3 occurred at 400°C as identified by a glancing angle x-ray diffractometer. Above 400°C, small traces of gallium oxide (Ga2O3)were observed along with higher intensities of the monoclinic peaks. The formation of Ga2O3 was confirmed by a depth profile analysis using an Auger electron spectrometer. Electrical resistivity measured by the van der Pauw method was influenced by the crystalline nature and the interfacial states induced by the diffused atoms from each side of WO3 and GaAs. A high photocurrent density of 7.5 mA/ cm2 at -1.0 V (vs SCE) appeared at the crystalline WO3 on p-type GaAs at 400°C resulting from effective carrier movement through the interfaces.",
author = "Yoon, {Ki Hyun} and Lee, {Jeong Won} and Cho, {Yong Soo} and Kang, {Dong Heon}",
year = "1996",
month = "12",
day = "1",
doi = "10.1063/1.116786",
language = "English",
volume = "68",
pages = "572--574",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

Structural and photocurrent-voltage characteristics of tungsten oxide thin films on p-GaAs. / Yoon, Ki Hyun; Lee, Jeong Won; Cho, Yong Soo; Kang, Dong Heon.

In: Applied Physics Letters, Vol. 68, No. 4, 01.12.1996, p. 572-574.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Structural and photocurrent-voltage characteristics of tungsten oxide thin films on p-GaAs

AU - Yoon, Ki Hyun

AU - Lee, Jeong Won

AU - Cho, Yong Soo

AU - Kang, Dong Heon

PY - 1996/12/1

Y1 - 1996/12/1

N2 - An n-type WO3 thin film on a p-type GaAs substrate has been investigated in terms of its structural, electrical, and photocurrent-voltage characteristics. Crystallization of the monoclinic phases of WO3 occurred at 400°C as identified by a glancing angle x-ray diffractometer. Above 400°C, small traces of gallium oxide (Ga2O3)were observed along with higher intensities of the monoclinic peaks. The formation of Ga2O3 was confirmed by a depth profile analysis using an Auger electron spectrometer. Electrical resistivity measured by the van der Pauw method was influenced by the crystalline nature and the interfacial states induced by the diffused atoms from each side of WO3 and GaAs. A high photocurrent density of 7.5 mA/ cm2 at -1.0 V (vs SCE) appeared at the crystalline WO3 on p-type GaAs at 400°C resulting from effective carrier movement through the interfaces.

AB - An n-type WO3 thin film on a p-type GaAs substrate has been investigated in terms of its structural, electrical, and photocurrent-voltage characteristics. Crystallization of the monoclinic phases of WO3 occurred at 400°C as identified by a glancing angle x-ray diffractometer. Above 400°C, small traces of gallium oxide (Ga2O3)were observed along with higher intensities of the monoclinic peaks. The formation of Ga2O3 was confirmed by a depth profile analysis using an Auger electron spectrometer. Electrical resistivity measured by the van der Pauw method was influenced by the crystalline nature and the interfacial states induced by the diffused atoms from each side of WO3 and GaAs. A high photocurrent density of 7.5 mA/ cm2 at -1.0 V (vs SCE) appeared at the crystalline WO3 on p-type GaAs at 400°C resulting from effective carrier movement through the interfaces.

UR - http://www.scopus.com/inward/record.url?scp=0029754249&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029754249&partnerID=8YFLogxK

U2 - 10.1063/1.116786

DO - 10.1063/1.116786

M3 - Article

AN - SCOPUS:0029754249

VL - 68

SP - 572

EP - 574

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

ER -