In this study, Au/MoS 2 /n-GaAs heterojunction is fabricated with single MoS 2 layer and its structural, chemical and electrical parameters are investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and measurement of current-voltage (I-V) characteristics at room temperature. XRD and XPS analysis results confirm the formation of MoS 2 layer on the n-GaAs surface. The electrical properties of the Au/MoS 2 /n-GaAs heterojunction are compared with those of the Au/n-GaAs Schottky junction. Interestingly, the heterojunction possesses a higher barrier height, lower leakage current and higher rectification ratio, in comparison with the Schottky junction. The shunt resistance (R Sh ) and series resistance (R S ) are also assessed for both the junctions. Moreover, the ideality factor (n), barrier height (Φ b ) and series resistance (R S ) are evaluated using Norde, Cheung's and surface potential (Ψ S -V) plots and the results are well-matched. Furthermore, the current transport mechanism is analyzed based on the forward bias I-V data. Lastly, the Poole-Frenkel emission conduction mechanism is employed to control the reverse bias I-V behavior of both Au/n-GaAs Schottky junction and Au/MoS 2 /n-GaAs heterojunction. The results demonstrate that the Au/MoS 2 /n-GaAs heterojunction fabricated using a simple technique is suitable for high-quality electronic and optoelectronic device applications.
Bibliographical noteFunding Information:
This research was supported by Nano-Material Technology Development Program ( NRF-2017M3A7B4041987 ).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Colloid and Surface Chemistry