Structural, chemical, and electrical parameters of Au/MoS 2 /n-GaAs metal/2D/3D hybrid heterojunction

R. Padma, Gilho Lee, Jeong Seob Kang, Seong Chan Jun

Research output: Contribution to journalArticle

Abstract

In this study, Au/MoS 2 /n-GaAs heterojunction is fabricated with single MoS 2 layer and its structural, chemical and electrical parameters are investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and measurement of current-voltage (I-V) characteristics at room temperature. XRD and XPS analysis results confirm the formation of MoS 2 layer on the n-GaAs surface. The electrical properties of the Au/MoS 2 /n-GaAs heterojunction are compared with those of the Au/n-GaAs Schottky junction. Interestingly, the heterojunction possesses a higher barrier height, lower leakage current and higher rectification ratio, in comparison with the Schottky junction. The shunt resistance (R Sh ) and series resistance (R S ) are also assessed for both the junctions. Moreover, the ideality factor (n), barrier height (Φ b ) and series resistance (R S ) are evaluated using Norde, Cheung's and surface potential (Ψ S -V) plots and the results are well-matched. Furthermore, the current transport mechanism is analyzed based on the forward bias I-V data. Lastly, the Poole-Frenkel emission conduction mechanism is employed to control the reverse bias I-V behavior of both Au/n-GaAs Schottky junction and Au/MoS 2 /n-GaAs heterojunction. The results demonstrate that the Au/MoS 2 /n-GaAs heterojunction fabricated using a simple technique is suitable for high-quality electronic and optoelectronic device applications.

Original languageEnglish
Pages (from-to)48-56
Number of pages9
JournalJournal of Colloid and Interface Science
Volume550
DOIs
Publication statusPublished - 2019 Aug 15

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Heterojunctions
Metals
X ray photoelectron spectroscopy
X ray diffraction
Surface potential
Leakage currents
Optoelectronic devices
Electric properties
gallium arsenide
Electric potential
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Colloid and Surface Chemistry

Cite this

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title = "Structural, chemical, and electrical parameters of Au/MoS 2 /n-GaAs metal/2D/3D hybrid heterojunction",
abstract = "In this study, Au/MoS 2 /n-GaAs heterojunction is fabricated with single MoS 2 layer and its structural, chemical and electrical parameters are investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and measurement of current-voltage (I-V) characteristics at room temperature. XRD and XPS analysis results confirm the formation of MoS 2 layer on the n-GaAs surface. The electrical properties of the Au/MoS 2 /n-GaAs heterojunction are compared with those of the Au/n-GaAs Schottky junction. Interestingly, the heterojunction possesses a higher barrier height, lower leakage current and higher rectification ratio, in comparison with the Schottky junction. The shunt resistance (R Sh ) and series resistance (R S ) are also assessed for both the junctions. Moreover, the ideality factor (n), barrier height (Φ b ) and series resistance (R S ) are evaluated using Norde, Cheung's and surface potential (Ψ S -V) plots and the results are well-matched. Furthermore, the current transport mechanism is analyzed based on the forward bias I-V data. Lastly, the Poole-Frenkel emission conduction mechanism is employed to control the reverse bias I-V behavior of both Au/n-GaAs Schottky junction and Au/MoS 2 /n-GaAs heterojunction. The results demonstrate that the Au/MoS 2 /n-GaAs heterojunction fabricated using a simple technique is suitable for high-quality electronic and optoelectronic device applications.",
author = "R. Padma and Gilho Lee and Kang, {Jeong Seob} and Jun, {Seong Chan}",
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Structural, chemical, and electrical parameters of Au/MoS 2 /n-GaAs metal/2D/3D hybrid heterojunction . / Padma, R.; Lee, Gilho; Kang, Jeong Seob; Jun, Seong Chan.

In: Journal of Colloid and Interface Science, Vol. 550, 15.08.2019, p. 48-56.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Structural, chemical, and electrical parameters of Au/MoS 2 /n-GaAs metal/2D/3D hybrid heterojunction

AU - Padma, R.

AU - Lee, Gilho

AU - Kang, Jeong Seob

AU - Jun, Seong Chan

PY - 2019/8/15

Y1 - 2019/8/15

N2 - In this study, Au/MoS 2 /n-GaAs heterojunction is fabricated with single MoS 2 layer and its structural, chemical and electrical parameters are investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and measurement of current-voltage (I-V) characteristics at room temperature. XRD and XPS analysis results confirm the formation of MoS 2 layer on the n-GaAs surface. The electrical properties of the Au/MoS 2 /n-GaAs heterojunction are compared with those of the Au/n-GaAs Schottky junction. Interestingly, the heterojunction possesses a higher barrier height, lower leakage current and higher rectification ratio, in comparison with the Schottky junction. The shunt resistance (R Sh ) and series resistance (R S ) are also assessed for both the junctions. Moreover, the ideality factor (n), barrier height (Φ b ) and series resistance (R S ) are evaluated using Norde, Cheung's and surface potential (Ψ S -V) plots and the results are well-matched. Furthermore, the current transport mechanism is analyzed based on the forward bias I-V data. Lastly, the Poole-Frenkel emission conduction mechanism is employed to control the reverse bias I-V behavior of both Au/n-GaAs Schottky junction and Au/MoS 2 /n-GaAs heterojunction. The results demonstrate that the Au/MoS 2 /n-GaAs heterojunction fabricated using a simple technique is suitable for high-quality electronic and optoelectronic device applications.

AB - In this study, Au/MoS 2 /n-GaAs heterojunction is fabricated with single MoS 2 layer and its structural, chemical and electrical parameters are investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and measurement of current-voltage (I-V) characteristics at room temperature. XRD and XPS analysis results confirm the formation of MoS 2 layer on the n-GaAs surface. The electrical properties of the Au/MoS 2 /n-GaAs heterojunction are compared with those of the Au/n-GaAs Schottky junction. Interestingly, the heterojunction possesses a higher barrier height, lower leakage current and higher rectification ratio, in comparison with the Schottky junction. The shunt resistance (R Sh ) and series resistance (R S ) are also assessed for both the junctions. Moreover, the ideality factor (n), barrier height (Φ b ) and series resistance (R S ) are evaluated using Norde, Cheung's and surface potential (Ψ S -V) plots and the results are well-matched. Furthermore, the current transport mechanism is analyzed based on the forward bias I-V data. Lastly, the Poole-Frenkel emission conduction mechanism is employed to control the reverse bias I-V behavior of both Au/n-GaAs Schottky junction and Au/MoS 2 /n-GaAs heterojunction. The results demonstrate that the Au/MoS 2 /n-GaAs heterojunction fabricated using a simple technique is suitable for high-quality electronic and optoelectronic device applications.

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