Structural, chemical, and electrical parameters of Au/MoS 2 /n-GaAs metal/2D/3D hybrid heterojunction

R. Padma, Gilho Lee, Jeong Seob Kang, Seong Chan Jun

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3 Citations (Scopus)

Abstract

In this study, Au/MoS 2 /n-GaAs heterojunction is fabricated with single MoS 2 layer and its structural, chemical and electrical parameters are investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and measurement of current-voltage (I-V) characteristics at room temperature. XRD and XPS analysis results confirm the formation of MoS 2 layer on the n-GaAs surface. The electrical properties of the Au/MoS 2 /n-GaAs heterojunction are compared with those of the Au/n-GaAs Schottky junction. Interestingly, the heterojunction possesses a higher barrier height, lower leakage current and higher rectification ratio, in comparison with the Schottky junction. The shunt resistance (R Sh ) and series resistance (R S ) are also assessed for both the junctions. Moreover, the ideality factor (n), barrier height (Φ b ) and series resistance (R S ) are evaluated using Norde, Cheung's and surface potential (Ψ S -V) plots and the results are well-matched. Furthermore, the current transport mechanism is analyzed based on the forward bias I-V data. Lastly, the Poole-Frenkel emission conduction mechanism is employed to control the reverse bias I-V behavior of both Au/n-GaAs Schottky junction and Au/MoS 2 /n-GaAs heterojunction. The results demonstrate that the Au/MoS 2 /n-GaAs heterojunction fabricated using a simple technique is suitable for high-quality electronic and optoelectronic device applications.

Original languageEnglish
Pages (from-to)48-56
Number of pages9
JournalJournal of Colloid and Interface Science
Volume550
DOIs
Publication statusPublished - 2019 Aug 15

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Colloid and Surface Chemistry

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