Structural Defects in Epitaxial III/V Layers

Engineering & Materials Science

• Defects 89%
• Stacking faults 74%
• Epitaxial growth 73%
• Energy gap 59%
• Contamination 50%
• III-V semiconductors 43%
• Photoluminescence 42%
• Semiconductor quantum wells 41%
• Carrier mobility 39%
• Gallium arsenide 37%
• Digital devices 34%
• Semiconductor lasers 32%
• Semiconductor devices 30%
• Optoelectronic devices 30%
• Sulfur 25%
• Integrated circuits 24%
• Adhesion 24%
• Semiconductor materials 23%
• Wavelength 23%
• Oxides 22%
• Silicon 20%
• Carbon 19%
• Substrates 18%
• Cooling 18%

Physics & Astronomy

• defects 72%
• particulates 52%
• crystal defects 51%
• contamination 46%
• gallium arsenides 29%
• carrier mobility 26%
• semiconductor devices 26%
• sulfur 25%
• integrated circuits 24%
• flexibility 23%
• lasing 23%
• adhesion 22%
• quantum wells 20%
• semiconductor lasers 20%
• engineering 19%
• photoluminescence 18%
• cooling 17%
• carbon 17%
• oxides 16%
• causes 15%
• output 15%
• silicon 14%
• electronics 13%
• wavelengths 12%

Chemistry

• Semiconductor 100%
• Stacking Fault 89%
• Band Gap 49%
• Optoelectronics 29%
• Cooling 29%
• Flexibility 26%
• Photoluminescence 25%
• Compound Mobility 25%
• Wavelength 23%
• Environment 18%
• Oxide 17%
• Carbon Atom 15%
• Surface 10%
• Application 10%