Structural deformation and void formation driven by phase transformation in the Ge2Sb2Te5 film

Seung Jong Park, Min Ahn, Kwangsik Jeong, Moon Hyung Jang, Mann Ho Cho, Jae Yong Song, Dae Hong Ko, Dong Ho Ahn, Seok Woo Nam, Gitae Jeong

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The failure mechanism of reversibility in the Ge2Sb 2Te5 (GST) film was analyzed microscopically based on transmission electron microscopy and ab initio density functional theory (DFT). In this study, the crystallization region was limited to the range of 500-600 °C under fast ramping rates, enabling the GST amorphous phase to approach a supercooled region above the glass transition temperature. The densification accompanying phase transformation under fast ramping rates induces two deformation behaviors: phase separation and void formation. In the disorder-order transition, the disordered domain of GST is dominated by low viscosity while approaching the supercooled region, which induces phase separation to compensate for the densification. However, coexisting cubic and hexagonal phases show void formation around the interfaces with some phase separation. The DFT calculation shows that the polymorphic transition, a fast, martensitic transformation between the cubic and hexagonal phases, induces a vacancy cluster at the interface. In the tensile stress state, void growth can be easily driven from the vacancy cluster as the nuclei for compensating for densification.

Original languageEnglish
Pages (from-to)2001-2009
Number of pages9
JournalJournal of Materials Chemistry C
Volume2
Issue number11
DOIs
Publication statusPublished - 2014 Mar 21

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Densification
Phase separation
Phase transitions
Vacancies
Density functional theory
Order disorder transitions
Martensitic transformations
Crystallization
Tensile stress
Viscosity
Transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Park, Seung Jong ; Ahn, Min ; Jeong, Kwangsik ; Jang, Moon Hyung ; Cho, Mann Ho ; Song, Jae Yong ; Ko, Dae Hong ; Ahn, Dong Ho ; Nam, Seok Woo ; Jeong, Gitae. / Structural deformation and void formation driven by phase transformation in the Ge2Sb2Te5 film. In: Journal of Materials Chemistry C. 2014 ; Vol. 2, No. 11. pp. 2001-2009.
@article{520775e8e1404d0198ed934f11bc7be9,
title = "Structural deformation and void formation driven by phase transformation in the Ge2Sb2Te5 film",
abstract = "The failure mechanism of reversibility in the Ge2Sb 2Te5 (GST) film was analyzed microscopically based on transmission electron microscopy and ab initio density functional theory (DFT). In this study, the crystallization region was limited to the range of 500-600 °C under fast ramping rates, enabling the GST amorphous phase to approach a supercooled region above the glass transition temperature. The densification accompanying phase transformation under fast ramping rates induces two deformation behaviors: phase separation and void formation. In the disorder-order transition, the disordered domain of GST is dominated by low viscosity while approaching the supercooled region, which induces phase separation to compensate for the densification. However, coexisting cubic and hexagonal phases show void formation around the interfaces with some phase separation. The DFT calculation shows that the polymorphic transition, a fast, martensitic transformation between the cubic and hexagonal phases, induces a vacancy cluster at the interface. In the tensile stress state, void growth can be easily driven from the vacancy cluster as the nuclei for compensating for densification.",
author = "Park, {Seung Jong} and Min Ahn and Kwangsik Jeong and Jang, {Moon Hyung} and Cho, {Mann Ho} and Song, {Jae Yong} and Ko, {Dae Hong} and Ahn, {Dong Ho} and Nam, {Seok Woo} and Gitae Jeong",
year = "2014",
month = "3",
day = "21",
doi = "10.1039/c3tc31924e",
language = "English",
volume = "2",
pages = "2001--2009",
journal = "Journal of Materials Chemistry C",
issn = "2050-7526",
publisher = "Royal Society of Chemistry",
number = "11",

}

Park, SJ, Ahn, M, Jeong, K, Jang, MH, Cho, MH, Song, JY, Ko, DH, Ahn, DH, Nam, SW & Jeong, G 2014, 'Structural deformation and void formation driven by phase transformation in the Ge2Sb2Te5 film', Journal of Materials Chemistry C, vol. 2, no. 11, pp. 2001-2009. https://doi.org/10.1039/c3tc31924e

Structural deformation and void formation driven by phase transformation in the Ge2Sb2Te5 film. / Park, Seung Jong; Ahn, Min; Jeong, Kwangsik; Jang, Moon Hyung; Cho, Mann Ho; Song, Jae Yong; Ko, Dae Hong; Ahn, Dong Ho; Nam, Seok Woo; Jeong, Gitae.

In: Journal of Materials Chemistry C, Vol. 2, No. 11, 21.03.2014, p. 2001-2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Structural deformation and void formation driven by phase transformation in the Ge2Sb2Te5 film

AU - Park, Seung Jong

AU - Ahn, Min

AU - Jeong, Kwangsik

AU - Jang, Moon Hyung

AU - Cho, Mann Ho

AU - Song, Jae Yong

AU - Ko, Dae Hong

AU - Ahn, Dong Ho

AU - Nam, Seok Woo

AU - Jeong, Gitae

PY - 2014/3/21

Y1 - 2014/3/21

N2 - The failure mechanism of reversibility in the Ge2Sb 2Te5 (GST) film was analyzed microscopically based on transmission electron microscopy and ab initio density functional theory (DFT). In this study, the crystallization region was limited to the range of 500-600 °C under fast ramping rates, enabling the GST amorphous phase to approach a supercooled region above the glass transition temperature. The densification accompanying phase transformation under fast ramping rates induces two deformation behaviors: phase separation and void formation. In the disorder-order transition, the disordered domain of GST is dominated by low viscosity while approaching the supercooled region, which induces phase separation to compensate for the densification. However, coexisting cubic and hexagonal phases show void formation around the interfaces with some phase separation. The DFT calculation shows that the polymorphic transition, a fast, martensitic transformation between the cubic and hexagonal phases, induces a vacancy cluster at the interface. In the tensile stress state, void growth can be easily driven from the vacancy cluster as the nuclei for compensating for densification.

AB - The failure mechanism of reversibility in the Ge2Sb 2Te5 (GST) film was analyzed microscopically based on transmission electron microscopy and ab initio density functional theory (DFT). In this study, the crystallization region was limited to the range of 500-600 °C under fast ramping rates, enabling the GST amorphous phase to approach a supercooled region above the glass transition temperature. The densification accompanying phase transformation under fast ramping rates induces two deformation behaviors: phase separation and void formation. In the disorder-order transition, the disordered domain of GST is dominated by low viscosity while approaching the supercooled region, which induces phase separation to compensate for the densification. However, coexisting cubic and hexagonal phases show void formation around the interfaces with some phase separation. The DFT calculation shows that the polymorphic transition, a fast, martensitic transformation between the cubic and hexagonal phases, induces a vacancy cluster at the interface. In the tensile stress state, void growth can be easily driven from the vacancy cluster as the nuclei for compensating for densification.

UR - http://www.scopus.com/inward/record.url?scp=84894457286&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894457286&partnerID=8YFLogxK

U2 - 10.1039/c3tc31924e

DO - 10.1039/c3tc31924e

M3 - Article

AN - SCOPUS:84894457286

VL - 2

SP - 2001

EP - 2009

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

IS - 11

ER -