Structural evolution of ZnSe/ZnS quantum dots during growth interruptions under hydrogen flows

Y. G. Kim, K. S. Baek, S. K. Chang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

It was demonstrated that ZnSe/ZnS quantum dots (QDs) could undergo structural transitions from 3D islands to 2D layer during growth interruption (GI) under hydrogen flows. In addition to the structural transition, a complex ripening process of the ZnSe QDs were observed together. Temperature-dependent photoluminescence (PL) measurements show that the ZnSe QDs turned into a quasi-2D layer, when the GI reached 60 s. PL lineshape evolution through the GI suggests two ripening regimes for the ZnSe QDs, which are in striking agreement with those for CdSe QDs.

Original languageEnglish
Pages (from-to)32-35
Number of pages4
JournalJournal of Crystal Growth
Volume293
Issue number1
DOIs
Publication statusPublished - 2006 Jul 15

Fingerprint

interruption
Semiconductor quantum dots
Hydrogen
quantum dots
hydrogen
Photoluminescence
photoluminescence
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

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abstract = "It was demonstrated that ZnSe/ZnS quantum dots (QDs) could undergo structural transitions from 3D islands to 2D layer during growth interruption (GI) under hydrogen flows. In addition to the structural transition, a complex ripening process of the ZnSe QDs were observed together. Temperature-dependent photoluminescence (PL) measurements show that the ZnSe QDs turned into a quasi-2D layer, when the GI reached 60 s. PL lineshape evolution through the GI suggests two ripening regimes for the ZnSe QDs, which are in striking agreement with those for CdSe QDs.",
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Structural evolution of ZnSe/ZnS quantum dots during growth interruptions under hydrogen flows. / Kim, Y. G.; Baek, K. S.; Chang, S. K.

In: Journal of Crystal Growth, Vol. 293, No. 1, 15.07.2006, p. 32-35.

Research output: Contribution to journalArticle

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AB - It was demonstrated that ZnSe/ZnS quantum dots (QDs) could undergo structural transitions from 3D islands to 2D layer during growth interruption (GI) under hydrogen flows. In addition to the structural transition, a complex ripening process of the ZnSe QDs were observed together. Temperature-dependent photoluminescence (PL) measurements show that the ZnSe QDs turned into a quasi-2D layer, when the GI reached 60 s. PL lineshape evolution through the GI suggests two ripening regimes for the ZnSe QDs, which are in striking agreement with those for CdSe QDs.

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