Structural properties of amorphous carbon nitride films prepared by remote plasma-enhanced chemical vapor deposition

Joo Han Kim, Yong Hwan Kim, Dong Jun Choi, Hong Koo Baik

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Amorphous carbon nitride thin films (a-CNx:H) have been prepared on silicon (100) substrates by remote plasma-enhanced chemical vapor deposition. A N2 plasma was used to excite a CH4 gas in the vicinity of the substrate. The structural properties and the composition of the a-CNx:H films were investigated using Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The structural and compositional modifications induced by the substrate negative d.c. bias ranging from 0 V to -400 V were examined. The deposition rate of the films increases with the bias voltage. Infrared spectra and XPS analysis indicate the formation of carbon-nitrogen bonds, in addition to hydrogenated groups in all the films. The composition ratio of nitrogen to carbon of the films varies from 0.18 to 0.25, and is not clearly dependent on the bias voltage. Raman spectra indicate a progressive graphitization of the films with increasing bias voltage.

Original languageEnglish
Pages (from-to)79-83
Number of pages5
JournalThin Solid Films
Volume289
Issue number1-2
DOIs
Publication statusPublished - 1996 Nov 30

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this