Structural properties of BaTiO3 thin films on Si grown by metalorganic chemical vapor deposition

Y. S. Yoon, W. N. Kang, H. S. Shin, S. S. Yom, T. W. Kim, Jong Yong Lee, D. J. Choi, S. S. Baek

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Abstract

Ferroelectric BaTiO3 thin films were grown on Si(100) substrates at a temperature of 600°C by in situ metalorganic chemical vapor deposition. X-ray diffraction and transmission electron microscopy results suggested that the 〈110〉 direction of the BaTiO3 preferred oriented films is parallel with the (100) direction of the Si substrates. Auger electron spectroscopy measurements showed that the compositions of the as-grown films were with a uniform distribution throughout the thickness of the films and with a sharp interface. These results indicate that the failure to obtain BaTiO3 epitaxial films was due to the formation of an interfacial amorphous layer prior to the creation of the films.

Original languageEnglish
Pages (from-to)1547-1549
Number of pages3
JournalJournal of Applied Physics
Volume73
Issue number3
DOIs
Publication statusPublished - 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Yoon, Y. S., Kang, W. N., Shin, H. S., Yom, S. S., Kim, T. W., Lee, J. Y., Choi, D. J., & Baek, S. S. (1993). Structural properties of BaTiO3 thin films on Si grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 73(3), 1547-1549. https://doi.org/10.1063/1.353233