Structural properties of BaTiO 3 thin films on Si grown by metalorganic chemical vapor deposition

Y. S. Yoon, W. N. Kang, H. S. Shin, S. S. Yom, T. W. Kim, Jong Yong Lee, Doo Jin Choi, S. S. Baek

Research output: Contribution to journalArticle

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Abstract

Ferroelectric BaTiO 3 thin films were grown on Si(100) substrates at a temperature of 600°C by in situ metalorganic chemical vapor deposition. X-ray diffraction and transmission electron microscopy results suggested that the 〈110〉 direction of the BaTiO 3 preferred oriented films is parallel with the (100) direction of the Si substrates. Auger electron spectroscopy measurements showed that the compositions of the as-grown films were with a uniform distribution throughout the thickness of the films and with a sharp interface. These results indicate that the failure to obtain BaTiO 3 epitaxial films was due to the formation of an interfacial amorphous layer prior to the creation of the films.

Original languageEnglish
Pages (from-to)1547-1549
Number of pages3
JournalJournal of Applied Physics
Volume73
Issue number3
DOIs
Publication statusPublished - 1993 Dec 1

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metalorganic chemical vapor deposition
thin films
Auger spectroscopy
electron spectroscopy
transmission electron microscopy
diffraction
x rays
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Yoon, Y. S., Kang, W. N., Shin, H. S., Yom, S. S., Kim, T. W., Lee, J. Y., ... Baek, S. S. (1993). Structural properties of BaTiO 3 thin films on Si grown by metalorganic chemical vapor deposition Journal of Applied Physics, 73(3), 1547-1549. https://doi.org/10.1063/1.353233
Yoon, Y. S. ; Kang, W. N. ; Shin, H. S. ; Yom, S. S. ; Kim, T. W. ; Lee, Jong Yong ; Choi, Doo Jin ; Baek, S. S. / Structural properties of BaTiO 3 thin films on Si grown by metalorganic chemical vapor deposition In: Journal of Applied Physics. 1993 ; Vol. 73, No. 3. pp. 1547-1549.
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Structural properties of BaTiO 3 thin films on Si grown by metalorganic chemical vapor deposition . / Yoon, Y. S.; Kang, W. N.; Shin, H. S.; Yom, S. S.; Kim, T. W.; Lee, Jong Yong; Choi, Doo Jin; Baek, S. S.

In: Journal of Applied Physics, Vol. 73, No. 3, 01.12.1993, p. 1547-1549.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Structural properties of BaTiO 3 thin films on Si grown by metalorganic chemical vapor deposition

AU - Yoon, Y. S.

AU - Kang, W. N.

AU - Shin, H. S.

AU - Yom, S. S.

AU - Kim, T. W.

AU - Lee, Jong Yong

AU - Choi, Doo Jin

AU - Baek, S. S.

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N2 - Ferroelectric BaTiO 3 thin films were grown on Si(100) substrates at a temperature of 600°C by in situ metalorganic chemical vapor deposition. X-ray diffraction and transmission electron microscopy results suggested that the 〈110〉 direction of the BaTiO 3 preferred oriented films is parallel with the (100) direction of the Si substrates. Auger electron spectroscopy measurements showed that the compositions of the as-grown films were with a uniform distribution throughout the thickness of the films and with a sharp interface. These results indicate that the failure to obtain BaTiO 3 epitaxial films was due to the formation of an interfacial amorphous layer prior to the creation of the films.

AB - Ferroelectric BaTiO 3 thin films were grown on Si(100) substrates at a temperature of 600°C by in situ metalorganic chemical vapor deposition. X-ray diffraction and transmission electron microscopy results suggested that the 〈110〉 direction of the BaTiO 3 preferred oriented films is parallel with the (100) direction of the Si substrates. Auger electron spectroscopy measurements showed that the compositions of the as-grown films were with a uniform distribution throughout the thickness of the films and with a sharp interface. These results indicate that the failure to obtain BaTiO 3 epitaxial films was due to the formation of an interfacial amorphous layer prior to the creation of the films.

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