Structural properties of ZnS/GaAs epilayers grown by atomic-layer epitaxy

Y. G. Kim, Y. S. Nam, K. S. Baek, S. K. Chang

Research output: Contribution to journalArticlepeer-review


ZnS epilayers were grown on (1 0 0) semi-insulating GaAs substrates using an atmospheric pressure metal-organic chemical vapor deposition (CVD) technique under the atomic-layer epitaxy (ALE) mode. Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to find the effect of the II-VI ratio of the 30-nm thick ZnS epilayers and to investigate the thickness-dependent characteristics of ZnS epilayers with the thicknesses of 30 and 100 nm. While the II-VI ratio-dependent ZnS quality is consistent regardless of the measurement, the thickness-dependent epilayer quality is quite contrary depending on the measurement. This difference demonstrates the non-uniform distribution of the strain-relaxation in the ZnS epilayer along the depth.

Original languageEnglish
Pages (from-to)1304-1306
Number of pages3
JournalCurrent Applied Physics
Issue number6
Publication statusPublished - 2009 Nov

Bibliographical note

Funding Information:
This work was supported in part by the Grant No. R01-2006-000-10330-0 (2008) from the Basic Research Program of the Korea Science and Engineering Foundation and in part by the Grant of Maeji Institute of Academic Research in fiscal year 2004–2008.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)


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