Structural properties of ZnS/GaAs epilayers grown by atomic-layer epitaxy

Y. G. Kim, Y. S. Nam, K. S. Baek, Soo Kyung Chang

Research output: Contribution to journalArticle

Abstract

ZnS epilayers were grown on (1 0 0) semi-insulating GaAs substrates using an atmospheric pressure metal-organic chemical vapor deposition (CVD) technique under the atomic-layer epitaxy (ALE) mode. Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to find the effect of the II-VI ratio of the 30-nm thick ZnS epilayers and to investigate the thickness-dependent characteristics of ZnS epilayers with the thicknesses of 30 and 100 nm. While the II-VI ratio-dependent ZnS quality is consistent regardless of the measurement, the thickness-dependent epilayer quality is quite contrary depending on the measurement. This difference demonstrates the non-uniform distribution of the strain-relaxation in the ZnS epilayer along the depth.

Original languageEnglish
Pages (from-to)1304-1306
Number of pages3
JournalCurrent Applied Physics
Volume9
Issue number6
DOIs
Publication statusPublished - 2009 Nov 1

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Atomic layer epitaxy
Epilayers
atomic layer epitaxy
Structural properties
metalorganic chemical vapor deposition
atmospheric pressure
Organic Chemicals
Strain relaxation
atomic force microscopy
Organic chemicals
photoluminescence
Atmospheric pressure
Chemical vapor deposition
Atomic force microscopy
Photoluminescence
Metals
gallium arsenide
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Kim, Y. G. ; Nam, Y. S. ; Baek, K. S. ; Chang, Soo Kyung. / Structural properties of ZnS/GaAs epilayers grown by atomic-layer epitaxy. In: Current Applied Physics. 2009 ; Vol. 9, No. 6. pp. 1304-1306.
@article{39b04de8f2584a9395cb5dc77a0f0180,
title = "Structural properties of ZnS/GaAs epilayers grown by atomic-layer epitaxy",
abstract = "ZnS epilayers were grown on (1 0 0) semi-insulating GaAs substrates using an atmospheric pressure metal-organic chemical vapor deposition (CVD) technique under the atomic-layer epitaxy (ALE) mode. Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to find the effect of the II-VI ratio of the 30-nm thick ZnS epilayers and to investigate the thickness-dependent characteristics of ZnS epilayers with the thicknesses of 30 and 100 nm. While the II-VI ratio-dependent ZnS quality is consistent regardless of the measurement, the thickness-dependent epilayer quality is quite contrary depending on the measurement. This difference demonstrates the non-uniform distribution of the strain-relaxation in the ZnS epilayer along the depth.",
author = "Kim, {Y. G.} and Nam, {Y. S.} and Baek, {K. S.} and Chang, {Soo Kyung}",
year = "2009",
month = "11",
day = "1",
doi = "10.1016/j.cap.2008.10.010",
language = "English",
volume = "9",
pages = "1304--1306",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "6",

}

Structural properties of ZnS/GaAs epilayers grown by atomic-layer epitaxy. / Kim, Y. G.; Nam, Y. S.; Baek, K. S.; Chang, Soo Kyung.

In: Current Applied Physics, Vol. 9, No. 6, 01.11.2009, p. 1304-1306.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Structural properties of ZnS/GaAs epilayers grown by atomic-layer epitaxy

AU - Kim, Y. G.

AU - Nam, Y. S.

AU - Baek, K. S.

AU - Chang, Soo Kyung

PY - 2009/11/1

Y1 - 2009/11/1

N2 - ZnS epilayers were grown on (1 0 0) semi-insulating GaAs substrates using an atmospheric pressure metal-organic chemical vapor deposition (CVD) technique under the atomic-layer epitaxy (ALE) mode. Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to find the effect of the II-VI ratio of the 30-nm thick ZnS epilayers and to investigate the thickness-dependent characteristics of ZnS epilayers with the thicknesses of 30 and 100 nm. While the II-VI ratio-dependent ZnS quality is consistent regardless of the measurement, the thickness-dependent epilayer quality is quite contrary depending on the measurement. This difference demonstrates the non-uniform distribution of the strain-relaxation in the ZnS epilayer along the depth.

AB - ZnS epilayers were grown on (1 0 0) semi-insulating GaAs substrates using an atmospheric pressure metal-organic chemical vapor deposition (CVD) technique under the atomic-layer epitaxy (ALE) mode. Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to find the effect of the II-VI ratio of the 30-nm thick ZnS epilayers and to investigate the thickness-dependent characteristics of ZnS epilayers with the thicknesses of 30 and 100 nm. While the II-VI ratio-dependent ZnS quality is consistent regardless of the measurement, the thickness-dependent epilayer quality is quite contrary depending on the measurement. This difference demonstrates the non-uniform distribution of the strain-relaxation in the ZnS epilayer along the depth.

UR - http://www.scopus.com/inward/record.url?scp=67349153124&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67349153124&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2008.10.010

DO - 10.1016/j.cap.2008.10.010

M3 - Article

VL - 9

SP - 1304

EP - 1306

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 6

ER -