Structural properties of ZnS/GaAs epilayers grown by atomic-layer epitaxy

Y. G. Kim, Y. S. Nam, K. S. Baek, S. K. Chang

Research output: Contribution to journalArticle

Abstract

ZnS epilayers were grown on (1 0 0) semi-insulating GaAs substrates using an atmospheric pressure metal-organic chemical vapor deposition (CVD) technique under the atomic-layer epitaxy (ALE) mode. Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to find the effect of the II-VI ratio of the 30-nm thick ZnS epilayers and to investigate the thickness-dependent characteristics of ZnS epilayers with the thicknesses of 30 and 100 nm. While the II-VI ratio-dependent ZnS quality is consistent regardless of the measurement, the thickness-dependent epilayer quality is quite contrary depending on the measurement. This difference demonstrates the non-uniform distribution of the strain-relaxation in the ZnS epilayer along the depth.

Original languageEnglish
Pages (from-to)1304-1306
Number of pages3
JournalCurrent Applied Physics
Volume9
Issue number6
DOIs
Publication statusPublished - 2009 Nov 1

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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