Structural stability and phase-change characteristics of Ge 2Sb2Te5/SiO2 nano-multilayered Films

M. H. Jang, S. J. Park, D. H. Lim, Mann-Ho Cho, Y. K. Kim, H. J. Yi, H. S. Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The phase-change characteristics of Ge2Sb2Te 5/SiO2 multilayered films with various bilayer thicknesses were investigated using high-resolution transmission electron microscopy. The change in the electrical sheet resistance of the films shows that the metastable face-centered cubic (fcc) structure formation was significantly affected by the bilayer thickness of the multilayer film. That is, compared with the single-layered Ge2Sb2Te5 film, the multilayered films transformed to hexagonal at lower temperatures. In particular, the transition temperature region of the fcc structure with semiconductor properties was significantly reduced. We observed that as the bilayer thickness decreased and annealing temperature increased, the structure of the multilayer film was transformed into Ge-deficient and hexagonal phases such as GeSb 2Te4 and Sb2Te3. This behavior was induced by the out-diffusion of Ge atoms from the outer surface layer, which can be caused by a difference in thermal strain at the interface between the Ge2Sb2Te5 and SiO2 films.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number4
DOIs
Publication statusPublished - 2009 Feb 24

Fingerprint

structural stability
Multilayer films
Sheet resistance
High resolution transmission electron microscopy
Superconducting transition temperature
Annealing
Semiconductor materials
Atoms
Temperature
surface layers
transition temperature
transmission electron microscopy
annealing
high resolution
atoms

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Jang, M. H. ; Park, S. J. ; Lim, D. H. ; Cho, Mann-Ho ; Kim, Y. K. ; Yi, H. J. ; Kim, H. S. / Structural stability and phase-change characteristics of Ge 2Sb2Te5/SiO2 nano-multilayered Films. In: Electrochemical and Solid-State Letters. 2009 ; Vol. 12, No. 4.
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Structural stability and phase-change characteristics of Ge 2Sb2Te5/SiO2 nano-multilayered Films. / Jang, M. H.; Park, S. J.; Lim, D. H.; Cho, Mann-Ho; Kim, Y. K.; Yi, H. J.; Kim, H. S.

In: Electrochemical and Solid-State Letters, Vol. 12, No. 4, 24.02.2009.

Research output: Contribution to journalArticle

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AU - Jang, M. H.

AU - Park, S. J.

AU - Lim, D. H.

AU - Cho, Mann-Ho

AU - Kim, Y. K.

AU - Yi, H. J.

AU - Kim, H. S.

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N2 - The phase-change characteristics of Ge2Sb2Te 5/SiO2 multilayered films with various bilayer thicknesses were investigated using high-resolution transmission electron microscopy. The change in the electrical sheet resistance of the films shows that the metastable face-centered cubic (fcc) structure formation was significantly affected by the bilayer thickness of the multilayer film. That is, compared with the single-layered Ge2Sb2Te5 film, the multilayered films transformed to hexagonal at lower temperatures. In particular, the transition temperature region of the fcc structure with semiconductor properties was significantly reduced. We observed that as the bilayer thickness decreased and annealing temperature increased, the structure of the multilayer film was transformed into Ge-deficient and hexagonal phases such as GeSb 2Te4 and Sb2Te3. This behavior was induced by the out-diffusion of Ge atoms from the outer surface layer, which can be caused by a difference in thermal strain at the interface between the Ge2Sb2Te5 and SiO2 films.

AB - The phase-change characteristics of Ge2Sb2Te 5/SiO2 multilayered films with various bilayer thicknesses were investigated using high-resolution transmission electron microscopy. The change in the electrical sheet resistance of the films shows that the metastable face-centered cubic (fcc) structure formation was significantly affected by the bilayer thickness of the multilayer film. That is, compared with the single-layered Ge2Sb2Te5 film, the multilayered films transformed to hexagonal at lower temperatures. In particular, the transition temperature region of the fcc structure with semiconductor properties was significantly reduced. We observed that as the bilayer thickness decreased and annealing temperature increased, the structure of the multilayer film was transformed into Ge-deficient and hexagonal phases such as GeSb 2Te4 and Sb2Te3. This behavior was induced by the out-diffusion of Ge atoms from the outer surface layer, which can be caused by a difference in thermal strain at the interface between the Ge2Sb2Te5 and SiO2 films.

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