Structure and gas-sensing characteristics of undoped tin oxide thin films fabricated by ion-assisted deposition

Seok Kyun Song; Jun Sik Cho; Won Kook Choi; Hyung Jin Jung; Dongsoo Choi; Jeong Yong Lee; Hong Koo Baik; Seok Keun Koh

doi:10.1016/S0925-4005(97)00326-2

Structure and gas-sensing characteristics of undoped tin oxide thin films fabricated by ion-assisted deposition

Seok Kyun Song, Jun Sik Cho, Won Kook Choi, Hyung Jin Jung, Dongsoo Choi, Jeong Yong Lee, Hong Koo Baik, Seok Keun Koh

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Undoped SnO_x thin films were deposited by a reactive ion assisted deposition technique at various ion beam potential (V_I) onto amorphous SiO₂/Si substrates at room temperature. Crystalline structures of the films were investigated in terms of grain size, composition ratio, porosity and peak area percent of adsorbed oxygen. Sensitivities for propane (C₃H₈), methane (CH₄) and hydrogen (H₂) gas in SnO_x gas sensor devices were characterized at the substrate temperatures of 100-500°C. The gas sensitivities depend on the grain size rather than the porosity. It is also proportioned to the amounts of adsorbed oxygen at room temperature by XPS analysis.

Original language	English
Pages (from-to)	42-49
Number of pages	8
Journal	Sensors and Actuators, B: Chemical
Volume	46
Issue number	1
DOIs	https://doi.org/10.1016/S0925-4005(97)00326-2
Publication status	Published - 1998 Jan 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0925-4005(97)00326-2

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abstract = "Undoped SnOx thin films were deposited by a reactive ion assisted deposition technique at various ion beam potential (VI) onto amorphous SiO2/Si substrates at room temperature. Crystalline structures of the films were investigated in terms of grain size, composition ratio, porosity and peak area percent of adsorbed oxygen. Sensitivities for propane (C3H8), methane (CH4) and hydrogen (H2) gas in SnOx gas sensor devices were characterized at the substrate temperatures of 100-500°C. The gas sensitivities depend on the grain size rather than the porosity. It is also proportioned to the amounts of adsorbed oxygen at room temperature by XPS analysis.",

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AU - Song, Seok Kyun

AU - Cho, Jun Sik

AU - Choi, Won Kook

AU - Jung, Hyung Jin

AU - Choi, Dongsoo

AU - Lee, Jeong Yong

AU - Baik, Hong Koo

AU - Koh, Seok Keun

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AB - Undoped SnOx thin films were deposited by a reactive ion assisted deposition technique at various ion beam potential (VI) onto amorphous SiO2/Si substrates at room temperature. Crystalline structures of the films were investigated in terms of grain size, composition ratio, porosity and peak area percent of adsorbed oxygen. Sensitivities for propane (C3H8), methane (CH4) and hydrogen (H2) gas in SnOx gas sensor devices were characterized at the substrate temperatures of 100-500°C. The gas sensitivities depend on the grain size rather than the porosity. It is also proportioned to the amounts of adsorbed oxygen at room temperature by XPS analysis.

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Structure and gas-sensing characteristics of undoped tin oxide thin films fabricated by ion-assisted deposition

Abstract

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