Abstract
We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 107. The highest hole mobility of 1.51 cm2 V-1 s-1 and the highest electron mobility of 0.85 cm2 V-1 s-1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.
Original language | English |
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Pages (from-to) | 40503-40515 |
Number of pages | 13 |
Journal | ACS Applied Materials and Interfaces |
Volume | 9 |
Issue number | 46 |
DOIs | |
Publication status | Published - 2017 Nov 22 |
Bibliographical note
Funding Information:This work was supported by a grant (NRF-2015M1A2A2056218) from the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science, ICT and Future Planning, a grant (NRF-2015R1D1A1A01058493) from the Basic Science Program through the NRF funded by the Ministry of Education, a grant from the R&D Convergence Program of NST (National Research Council of Science & Technology) of Republic of Korea (CAP-15-04-KITECH), and a grant from Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (NRF-2013M3A6A5073177). H.K. acknowledges support from National Research Foundation of Korea (NRF-2014R1A2A1A10052454).
Funding Information:
This work was supported by a grant (NRF-2015M1A2A2056218) from the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science ICT and Future Planning, a grant (NRF-2015R1D1A1A01058493) from the Basic Science Program through the NRF funded by the Ministry of Education a grant from the R&D Convergence Program of NST (National Research Council of Science & Technology) of Republic of Korea (CAP-15-04-KITECH) and a grant from Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (NRF-2013M3A6A5073177). H.K. acknowledges support from National Research Foundation of Korea (NRF-2014R1A2A1A10052454).
Publisher Copyright:
© 2017 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)