Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors

Min Je Kim, A. Ra Jung, Myeongjae Lee, Dongjin Kim, Suhee Ro, Seon Mi Jin, Hieu Dinh Nguyen, Jeehye Yang, Kyung Koo Lee, Eunji Lee, Moon Sung Kang, Hyunjung Kim, Jong Ho Choi, Bongsoo Kim, Jeong Ho Cho

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 107. The highest hole mobility of 1.51 cm2 V-1 s-1 and the highest electron mobility of 0.85 cm2 V-1 s-1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.

Original languageEnglish
Pages (from-to)40503-40515
Number of pages13
JournalACS Applied Materials and Interfaces
Volume9
Issue number46
DOIs
Publication statusPublished - 2017 Nov 22

Bibliographical note

Funding Information:
This work was supported by a grant (NRF-2015M1A2A2056218) from the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science, ICT and Future Planning, a grant (NRF-2015R1D1A1A01058493) from the Basic Science Program through the NRF funded by the Ministry of Education, a grant from the R&D Convergence Program of NST (National Research Council of Science & Technology) of Republic of Korea (CAP-15-04-KITECH), and a grant from Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (NRF-2013M3A6A5073177). H.K. acknowledges support from National Research Foundation of Korea (NRF-2014R1A2A1A10052454).

Funding Information:
This work was supported by a grant (NRF-2015M1A2A2056218) from the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science ICT and Future Planning, a grant (NRF-2015R1D1A1A01058493) from the Basic Science Program through the NRF funded by the Ministry of Education a grant from the R&D Convergence Program of NST (National Research Council of Science & Technology) of Republic of Korea (CAP-15-04-KITECH) and a grant from Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (NRF-2013M3A6A5073177). H.K. acknowledges support from National Research Foundation of Korea (NRF-2014R1A2A1A10052454).

Publisher Copyright:
© 2017 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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