Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors

Min Je Kim; A. Ra Jung; Myeongjae Lee; Dongjin Kim; Suhee Ro; Seon Mi Jin; Hieu Dinh Nguyen; Jeehye Yang; Kyung Koo Lee; Eunji Lee; Moon Sung Kang; Hyunjung Kim; Jong Ho Choi; Bongsoo Kim; Jeong Ho Cho

doi:10.1021/acsami.7b12435

Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors

Min Je Kim, A. Ra Jung, Myeongjae Lee, Dongjin Kim, Suhee Ro, Seon Mi Jin, Hieu Dinh Nguyen, Jeehye Yang, Kyung Koo Lee, Eunji Lee, Moon Sung Kang, Hyunjung Kim, Jong Ho Choi, Bongsoo Kim, Jeong Ho Cho

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 10⁷. The highest hole mobility of 1.51 cm² V^-1 s^-1 and the highest electron mobility of 0.85 cm² V^-1 s^-1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.

Original language	English
Pages (from-to)	40503-40515
Number of pages	13
Journal	ACS Applied Materials and Interfaces
Volume	9
Issue number	46
DOIs	https://doi.org/10.1021/acsami.7b12435
Publication status	Published - 2017 Nov 22

Bibliographical note

Funding Information:
This work was supported by a grant (NRF-2015M1A2A2056218) from the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science, ICT and Future Planning, a grant (NRF-2015R1D1A1A01058493) from the Basic Science Program through the NRF funded by the Ministry of Education, a grant from the R&D Convergence Program of NST (National Research Council of Science & Technology) of Republic of Korea (CAP-15-04-KITECH), and a grant from Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (NRF-2013M3A6A5073177). H.K. acknowledges support from National Research Foundation of Korea (NRF-2014R1A2A1A10052454).

Funding Information:
This work was supported by a grant (NRF-2015M1A2A2056218) from the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science ICT and Future Planning, a grant (NRF-2015R1D1A1A01058493) from the Basic Science Program through the NRF funded by the Ministry of Education a grant from the R&D Convergence Program of NST (National Research Council of Science & Technology) of Republic of Korea (CAP-15-04-KITECH) and a grant from Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (NRF-2013M3A6A5073177). H.K. acknowledges support from National Research Foundation of Korea (NRF-2014R1A2A1A10052454).

Publisher Copyright:
© 2017 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)

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Kim, M. J., Jung, A. R., Lee, M., Kim, D., Ro, S., Jin, S. M., Nguyen, H. D., Yang, J., Lee, K. K., Lee, E., Kang, M. S., Kim, H., Choi, J. H., Kim, B., & Cho, J. H. (2017). Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors. ACS Applied Materials and Interfaces, 9(46), 40503-40515. https://doi.org/10.1021/acsami.7b12435

Kim, Min Je ; Jung, A. Ra ; Lee, Myeongjae ; Kim, Dongjin ; Ro, Suhee ; Jin, Seon Mi ; Nguyen, Hieu Dinh ; Yang, Jeehye ; Lee, Kyung Koo ; Lee, Eunji ; Kang, Moon Sung ; Kim, Hyunjung ; Choi, Jong Ho ; Kim, Bongsoo ; Cho, Jeong Ho. / Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors. In: ACS Applied Materials and Interfaces. 2017 ; Vol. 9, No. 46. pp. 40503-40515.

@article{b7c3fe53306743ddbe7559439b4db7f0,

title = "Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors",

abstract = "We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 107. The highest hole mobility of 1.51 cm2 V-1 s-1 and the highest electron mobility of 0.85 cm2 V-1 s-1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.",

author = "Kim, {Min Je} and Jung, {A. Ra} and Myeongjae Lee and Dongjin Kim and Suhee Ro and Jin, {Seon Mi} and Nguyen, {Hieu Dinh} and Jeehye Yang and Lee, {Kyung Koo} and Eunji Lee and Kang, {Moon Sung} and Hyunjung Kim and Choi, {Jong Ho} and Bongsoo Kim and Cho, {Jeong Ho}",

note = "Funding Information: This work was supported by a grant (NRF-2015M1A2A2056218) from the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science, ICT and Future Planning, a grant (NRF-2015R1D1A1A01058493) from the Basic Science Program through the NRF funded by the Ministry of Education, a grant from the R&D Convergence Program of NST (National Research Council of Science & Technology) of Republic of Korea (CAP-15-04-KITECH), and a grant from Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (NRF-2013M3A6A5073177). H.K. acknowledges support from National Research Foundation of Korea (NRF-2014R1A2A1A10052454). Funding Information: This work was supported by a grant (NRF-2015M1A2A2056218) from the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science ICT and Future Planning, a grant (NRF-2015R1D1A1A01058493) from the Basic Science Program through the NRF funded by the Ministry of Education a grant from the R&D Convergence Program of NST (National Research Council of Science & Technology) of Republic of Korea (CAP-15-04-KITECH) and a grant from Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (NRF-2013M3A6A5073177). H.K. acknowledges support from National Research Foundation of Korea (NRF-2014R1A2A1A10052454). Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

year = "2017",

month = nov,

day = "22",

doi = "10.1021/acsami.7b12435",

language = "English",

volume = "9",

pages = "40503--40515",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

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Kim, MJ, Jung, AR, Lee, M, Kim, D, Ro, S, Jin, SM, Nguyen, HD, Yang, J, Lee, KK, Lee, E, Kang, MS, Kim, H, Choi, JH, Kim, B & Cho, JH 2017, 'Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors', ACS Applied Materials and Interfaces, vol. 9, no. 46, pp. 40503-40515. https://doi.org/10.1021/acsami.7b12435

Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors. / Kim, Min Je; Jung, A. Ra; Lee, Myeongjae; Kim, Dongjin; Ro, Suhee; Jin, Seon Mi; Nguyen, Hieu Dinh; Yang, Jeehye; Lee, Kyung Koo; Lee, Eunji; Kang, Moon Sung; Kim, Hyunjung; Choi, Jong Ho; Kim, Bongsoo; Cho, Jeong Ho.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 46, 22.11.2017, p. 40503-40515.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors

AU - Kim, Min Je

AU - Jung, A. Ra

AU - Lee, Myeongjae

AU - Kim, Dongjin

AU - Ro, Suhee

AU - Jin, Seon Mi

AU - Nguyen, Hieu Dinh

AU - Yang, Jeehye

AU - Lee, Kyung Koo

AU - Lee, Eunji

AU - Kang, Moon Sung

AU - Kim, Hyunjung

AU - Choi, Jong Ho

AU - Kim, Bongsoo

AU - Cho, Jeong Ho

N1 - Funding Information: This work was supported by a grant (NRF-2015M1A2A2056218) from the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science, ICT and Future Planning, a grant (NRF-2015R1D1A1A01058493) from the Basic Science Program through the NRF funded by the Ministry of Education, a grant from the R&D Convergence Program of NST (National Research Council of Science & Technology) of Republic of Korea (CAP-15-04-KITECH), and a grant from Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (NRF-2013M3A6A5073177). H.K. acknowledges support from National Research Foundation of Korea (NRF-2014R1A2A1A10052454). Funding Information: This work was supported by a grant (NRF-2015M1A2A2056218) from the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science ICT and Future Planning, a grant (NRF-2015R1D1A1A01058493) from the Basic Science Program through the NRF funded by the Ministry of Education a grant from the R&D Convergence Program of NST (National Research Council of Science & Technology) of Republic of Korea (CAP-15-04-KITECH) and a grant from Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (NRF-2013M3A6A5073177). H.K. acknowledges support from National Research Foundation of Korea (NRF-2014R1A2A1A10052454). Publisher Copyright: © 2017 American Chemical Society.

PY - 2017/11/22

Y1 - 2017/11/22

N2 - We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 107. The highest hole mobility of 1.51 cm2 V-1 s-1 and the highest electron mobility of 0.85 cm2 V-1 s-1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.

AB - We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 107. The highest hole mobility of 1.51 cm2 V-1 s-1 and the highest electron mobility of 0.85 cm2 V-1 s-1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.

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JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

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ER -

Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors

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