Abstract
We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 107. The highest hole mobility of 1.51 cm2 V-1 s-1 and the highest electron mobility of 0.85 cm2 V-1 s-1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.
| Original language | English |
|---|---|
| Pages (from-to) | 40503-40515 |
| Number of pages | 13 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 9 |
| Issue number | 46 |
| DOIs | |
| Publication status | Published - 2017 Nov 22 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors. / Kim, Min Je; Jung, A. Ra; Lee, Myeongjae; Kim, Dongjin; Ro, Suhee; Jin, Seon Mi; Nguyen, Hieu Dinh; Yang, Jeehye; Lee, Kyung Koo; Lee, Eunji; Kang, Moon Sung; Kim, Hyunjung; Choi, Jong Ho; Kim, Bongsoo; Cho, Jeong Ho.
In: ACS Applied Materials and Interfaces, Vol. 9, No. 46, 22.11.2017, p. 40503-40515.Research output: Contribution to journal › Article
TY - JOUR
T1 - Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors
AU - Kim, Min Je
AU - Jung, A. Ra
AU - Lee, Myeongjae
AU - Kim, Dongjin
AU - Ro, Suhee
AU - Jin, Seon Mi
AU - Nguyen, Hieu Dinh
AU - Yang, Jeehye
AU - Lee, Kyung Koo
AU - Lee, Eunji
AU - Kang, Moon Sung
AU - Kim, Hyunjung
AU - Choi, Jong Ho
AU - Kim, Bongsoo
AU - Cho, Jeong Ho
PY - 2017/11/22
Y1 - 2017/11/22
N2 - We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 107. The highest hole mobility of 1.51 cm2 V-1 s-1 and the highest electron mobility of 0.85 cm2 V-1 s-1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.
AB - We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 107. The highest hole mobility of 1.51 cm2 V-1 s-1 and the highest electron mobility of 0.85 cm2 V-1 s-1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.
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U2 - 10.1021/acsami.7b12435
DO - 10.1021/acsami.7b12435
M3 - Article
AN - SCOPUS:85035075686
VL - 9
SP - 40503
EP - 40515
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 46
ER -