Single photon avalanche diode (SPAD) is one of the promising candidates among photodetectors due to its high sensitivity and accuracy. Along with the existing custom compound avalanche diodes, SPADs fabricated in CMOS technology have been suggested and studied widely due to its advantage in manufacturing cost and system integration capability. Since SPAD is the core device in photodetector module and can be applied to the usage of the autonomous driving system, the reliability of SPADs should be addressed and studied. In this paper, the device reliability and temperature dependence of SPADs varying the different device structures are investigated and the relationship between device structure and device characteristics is also discussed with modeling and simulation.
Bibliographical noteFunding Information:
This work was supported by the Industrial Technology Innovation Program (10063634, The development of 50 m range ToF CMOS sensor, optical system and signal processing for automotive) funded by the Ministry of Trade, Industry and Energy. This work was also supported by Institute of BioMed-IT, Energy-IT and Smart-IT Technology (BEST), a Brain Korea 21 plus program, Yonsei University.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering