Abstract
Electrical properties of three kinds of poly(methyl methacrylate) (PMMA) with different tacticity, i.e. isotactic(i), syndiotactic(s), and atatic(a), were investigated for the application in field effect transistor. Metal-insulator-silicon structures were fabricated via spin coating PMMA on heavily doped p-type silicon (p+-Si) followed by evaporating gold electrode. The electrical characteristics were remarkably improved by heat-treatment at temperatures 40 K above glass transition temperatures of PMMAs. Among the three PMMA isomers, i-PMMA was observed to possess the highest dielectric strength (1.1 MV/cm) with the lowest leakage current density, but also the lowest dielectric constant (k = 2.5). Top-contact thin film transistors fabricated with the configuration of NiOx/pentacene/i-PMMA/p+-Si, where the NiOx being used as a source/drain electrode, displayed relatively a decent field effect mobility of 0.042 cm2/V-s which is not that low with such a low dielectric capacitor as thick i-PMMA film.
| Original language | English |
|---|---|
| Pages (from-to) | 4041-4044 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 515 |
| Issue number | 7-8 |
| DOIs | |
| Publication status | Published - 2007 Feb 26 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
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Studies on poly(methyl methacrylate) dielectric layer for field effect transistor : Influence of polymer tacticity. / Park, Ji Hoon; Hwang, D. K.; Lee, Jiyoul; Im, Seongil; Kim, Eugene.
In: Thin Solid Films, Vol. 515, No. 7-8, 26.02.2007, p. 4041-4044.Research output: Contribution to journal › Article
TY - JOUR
T1 - Studies on poly(methyl methacrylate) dielectric layer for field effect transistor
T2 - Influence of polymer tacticity
AU - Park, Ji Hoon
AU - Hwang, D. K.
AU - Lee, Jiyoul
AU - Im, Seongil
AU - Kim, Eugene
PY - 2007/2/26
Y1 - 2007/2/26
N2 - Electrical properties of three kinds of poly(methyl methacrylate) (PMMA) with different tacticity, i.e. isotactic(i), syndiotactic(s), and atatic(a), were investigated for the application in field effect transistor. Metal-insulator-silicon structures were fabricated via spin coating PMMA on heavily doped p-type silicon (p+-Si) followed by evaporating gold electrode. The electrical characteristics were remarkably improved by heat-treatment at temperatures 40 K above glass transition temperatures of PMMAs. Among the three PMMA isomers, i-PMMA was observed to possess the highest dielectric strength (1.1 MV/cm) with the lowest leakage current density, but also the lowest dielectric constant (k = 2.5). Top-contact thin film transistors fabricated with the configuration of NiOx/pentacene/i-PMMA/p+-Si, where the NiOx being used as a source/drain electrode, displayed relatively a decent field effect mobility of 0.042 cm2/V-s which is not that low with such a low dielectric capacitor as thick i-PMMA film.
AB - Electrical properties of three kinds of poly(methyl methacrylate) (PMMA) with different tacticity, i.e. isotactic(i), syndiotactic(s), and atatic(a), were investigated for the application in field effect transistor. Metal-insulator-silicon structures were fabricated via spin coating PMMA on heavily doped p-type silicon (p+-Si) followed by evaporating gold electrode. The electrical characteristics were remarkably improved by heat-treatment at temperatures 40 K above glass transition temperatures of PMMAs. Among the three PMMA isomers, i-PMMA was observed to possess the highest dielectric strength (1.1 MV/cm) with the lowest leakage current density, but also the lowest dielectric constant (k = 2.5). Top-contact thin film transistors fabricated with the configuration of NiOx/pentacene/i-PMMA/p+-Si, where the NiOx being used as a source/drain electrode, displayed relatively a decent field effect mobility of 0.042 cm2/V-s which is not that low with such a low dielectric capacitor as thick i-PMMA film.
UR - http://www.scopus.com/inward/record.url?scp=33846932820&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33846932820&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2006.10.121
DO - 10.1016/j.tsf.2006.10.121
M3 - Article
AN - SCOPUS:33846932820
VL - 515
SP - 4041
EP - 4044
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 7-8
ER -