Studies on poly(methyl methacrylate) dielectric layer for field effect transistor

Influence of polymer tacticity

Ji Hoon Park, D. K. Hwang, Jiyoul Lee, Seongil Im, Eugene Kim

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Electrical properties of three kinds of poly(methyl methacrylate) (PMMA) with different tacticity, i.e. isotactic(i), syndiotactic(s), and atatic(a), were investigated for the application in field effect transistor. Metal-insulator-silicon structures were fabricated via spin coating PMMA on heavily doped p-type silicon (p+-Si) followed by evaporating gold electrode. The electrical characteristics were remarkably improved by heat-treatment at temperatures 40 K above glass transition temperatures of PMMAs. Among the three PMMA isomers, i-PMMA was observed to possess the highest dielectric strength (1.1 MV/cm) with the lowest leakage current density, but also the lowest dielectric constant (k = 2.5). Top-contact thin film transistors fabricated with the configuration of NiOx/pentacene/i-PMMA/p+-Si, where the NiOx being used as a source/drain electrode, displayed relatively a decent field effect mobility of 0.042 cm2/V-s which is not that low with such a low dielectric capacitor as thick i-PMMA film.

Original languageEnglish
Pages (from-to)4041-4044
Number of pages4
JournalThin Solid Films
Volume515
Issue number7-8
DOIs
Publication statusPublished - 2007 Feb 26

Fingerprint

Polymethyl Methacrylate
Field effect transistors
Polymethyl methacrylates
polymethyl methacrylate
Polymers
field effect transistors
polymers
Silicon
Electrodes
electrodes
Spin coating
silicon
Thin film transistors
Leakage currents
Isomers
glass transition temperature
coating
capacitors
Gold
Electric properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Park, Ji Hoon ; Hwang, D. K. ; Lee, Jiyoul ; Im, Seongil ; Kim, Eugene. / Studies on poly(methyl methacrylate) dielectric layer for field effect transistor : Influence of polymer tacticity. In: Thin Solid Films. 2007 ; Vol. 515, No. 7-8. pp. 4041-4044.
@article{dc9413fc4f7843cab924d3e10e4afb5e,
title = "Studies on poly(methyl methacrylate) dielectric layer for field effect transistor: Influence of polymer tacticity",
abstract = "Electrical properties of three kinds of poly(methyl methacrylate) (PMMA) with different tacticity, i.e. isotactic(i), syndiotactic(s), and atatic(a), were investigated for the application in field effect transistor. Metal-insulator-silicon structures were fabricated via spin coating PMMA on heavily doped p-type silicon (p+-Si) followed by evaporating gold electrode. The electrical characteristics were remarkably improved by heat-treatment at temperatures 40 K above glass transition temperatures of PMMAs. Among the three PMMA isomers, i-PMMA was observed to possess the highest dielectric strength (1.1 MV/cm) with the lowest leakage current density, but also the lowest dielectric constant (k = 2.5). Top-contact thin film transistors fabricated with the configuration of NiOx/pentacene/i-PMMA/p+-Si, where the NiOx being used as a source/drain electrode, displayed relatively a decent field effect mobility of 0.042 cm2/V-s which is not that low with such a low dielectric capacitor as thick i-PMMA film.",
author = "Park, {Ji Hoon} and Hwang, {D. K.} and Jiyoul Lee and Seongil Im and Eugene Kim",
year = "2007",
month = "2",
day = "26",
doi = "10.1016/j.tsf.2006.10.121",
language = "English",
volume = "515",
pages = "4041--4044",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "7-8",

}

Studies on poly(methyl methacrylate) dielectric layer for field effect transistor : Influence of polymer tacticity. / Park, Ji Hoon; Hwang, D. K.; Lee, Jiyoul; Im, Seongil; Kim, Eugene.

In: Thin Solid Films, Vol. 515, No. 7-8, 26.02.2007, p. 4041-4044.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Studies on poly(methyl methacrylate) dielectric layer for field effect transistor

T2 - Influence of polymer tacticity

AU - Park, Ji Hoon

AU - Hwang, D. K.

AU - Lee, Jiyoul

AU - Im, Seongil

AU - Kim, Eugene

PY - 2007/2/26

Y1 - 2007/2/26

N2 - Electrical properties of three kinds of poly(methyl methacrylate) (PMMA) with different tacticity, i.e. isotactic(i), syndiotactic(s), and atatic(a), were investigated for the application in field effect transistor. Metal-insulator-silicon structures were fabricated via spin coating PMMA on heavily doped p-type silicon (p+-Si) followed by evaporating gold electrode. The electrical characteristics were remarkably improved by heat-treatment at temperatures 40 K above glass transition temperatures of PMMAs. Among the three PMMA isomers, i-PMMA was observed to possess the highest dielectric strength (1.1 MV/cm) with the lowest leakage current density, but also the lowest dielectric constant (k = 2.5). Top-contact thin film transistors fabricated with the configuration of NiOx/pentacene/i-PMMA/p+-Si, where the NiOx being used as a source/drain electrode, displayed relatively a decent field effect mobility of 0.042 cm2/V-s which is not that low with such a low dielectric capacitor as thick i-PMMA film.

AB - Electrical properties of three kinds of poly(methyl methacrylate) (PMMA) with different tacticity, i.e. isotactic(i), syndiotactic(s), and atatic(a), were investigated for the application in field effect transistor. Metal-insulator-silicon structures were fabricated via spin coating PMMA on heavily doped p-type silicon (p+-Si) followed by evaporating gold electrode. The electrical characteristics were remarkably improved by heat-treatment at temperatures 40 K above glass transition temperatures of PMMAs. Among the three PMMA isomers, i-PMMA was observed to possess the highest dielectric strength (1.1 MV/cm) with the lowest leakage current density, but also the lowest dielectric constant (k = 2.5). Top-contact thin film transistors fabricated with the configuration of NiOx/pentacene/i-PMMA/p+-Si, where the NiOx being used as a source/drain electrode, displayed relatively a decent field effect mobility of 0.042 cm2/V-s which is not that low with such a low dielectric capacitor as thick i-PMMA film.

UR - http://www.scopus.com/inward/record.url?scp=33846932820&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846932820&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2006.10.121

DO - 10.1016/j.tsf.2006.10.121

M3 - Article

VL - 515

SP - 4041

EP - 4044

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 7-8

ER -