Studies on the characteristics and durability of a vertical type organic transistor using indenofluorenedione derivatives as an n-type active material

Tae Yeon Lee, Dae Young Jung, Jong Wook Park, Jeong Ho Cho, Se Young Oh

Research output: Contribution to journalArticlepeer-review

Abstract

We have fabricated a vertical type organic field effect transistor (OFET) using indenofluorenedione derivatives (IF-dione-F) as an n-type organic active material and dimethyldicyanoquinonediimine (DMDCNQI) as an n-type buffer layer. The configuration of the vertical type OFET was ITO (drain)/ IF-dione-F/Metal (gate)/IF-dione-F/DMDCNQI/Metal (source). The characteristics of the vertical type OFET were investigated from the measurements of current-voltage characteristics, contact resistance and device durability. In particular, the device consisting of ITO/TriF-IF-dione/LiAl/ TriF-IFdione/ DMDCNQI/LiAl showed a low turn-on voltage and a high on/off ratio of 60×103.

Original languageEnglish
Pages (from-to)8016-8019
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number12
DOIs
Publication statusPublished - 2013 Dec

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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