Studies on the characteristics and durability of a vertical type organic transistor using indenofluorenedione derivatives as an n-type active material

Tae Yeon Lee, Dae Young Jung, Jong Wook Park, Jeong Ho Cho, Se Young Oh

Research output: Contribution to journalArticle

Abstract

We have fabricated a vertical type organic field effect transistor (OFET) using indenofluorenedione derivatives (IF-dione-F) as an n-type organic active material and dimethyldicyanoquinonediimine (DMDCNQI) as an n-type buffer layer. The configuration of the vertical type OFET was ITO (drain)/ IF-dione-F/Metal (gate)/IF-dione-F/DMDCNQI/Metal (source). The characteristics of the vertical type OFET were investigated from the measurements of current-voltage characteristics, contact resistance and device durability. In particular, the device consisting of ITO/TriF-IF-dione/LiAl/ TriF-IFdione/ DMDCNQI/LiAl showed a low turn-on voltage and a high on/off ratio of 60×103.

Original languageEnglish
Pages (from-to)8016-8019
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number12
DOIs
Publication statusPublished - 2013 Dec 1

Fingerprint

Organic field effect transistors
Dione
durability
Transistors
Durability
transistors
Metals
Derivatives
Equipment and Supplies
field effect transistors
ITO (semiconductors)
Buffers
Contact resistance
Buffer layers
Current voltage characteristics
electric potential
contact resistance
metals
buffers
Electric potential

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

@article{6e872ef473174cc6b0eb23aa710ae7f1,
title = "Studies on the characteristics and durability of a vertical type organic transistor using indenofluorenedione derivatives as an n-type active material",
abstract = "We have fabricated a vertical type organic field effect transistor (OFET) using indenofluorenedione derivatives (IF-dione-F) as an n-type organic active material and dimethyldicyanoquinonediimine (DMDCNQI) as an n-type buffer layer. The configuration of the vertical type OFET was ITO (drain)/ IF-dione-F/Metal (gate)/IF-dione-F/DMDCNQI/Metal (source). The characteristics of the vertical type OFET were investigated from the measurements of current-voltage characteristics, contact resistance and device durability. In particular, the device consisting of ITO/TriF-IF-dione/LiAl/ TriF-IFdione/ DMDCNQI/LiAl showed a low turn-on voltage and a high on/off ratio of 60×103.",
author = "Lee, {Tae Yeon} and Jung, {Dae Young} and Park, {Jong Wook} and Cho, {Jeong Ho} and Oh, {Se Young}",
year = "2013",
month = "12",
day = "1",
doi = "10.1166/jnn.2013.8156",
language = "English",
volume = "13",
pages = "8016--8019",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "12",

}

Studies on the characteristics and durability of a vertical type organic transistor using indenofluorenedione derivatives as an n-type active material. / Lee, Tae Yeon; Jung, Dae Young; Park, Jong Wook; Cho, Jeong Ho; Oh, Se Young.

In: Journal of Nanoscience and Nanotechnology, Vol. 13, No. 12, 01.12.2013, p. 8016-8019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Studies on the characteristics and durability of a vertical type organic transistor using indenofluorenedione derivatives as an n-type active material

AU - Lee, Tae Yeon

AU - Jung, Dae Young

AU - Park, Jong Wook

AU - Cho, Jeong Ho

AU - Oh, Se Young

PY - 2013/12/1

Y1 - 2013/12/1

N2 - We have fabricated a vertical type organic field effect transistor (OFET) using indenofluorenedione derivatives (IF-dione-F) as an n-type organic active material and dimethyldicyanoquinonediimine (DMDCNQI) as an n-type buffer layer. The configuration of the vertical type OFET was ITO (drain)/ IF-dione-F/Metal (gate)/IF-dione-F/DMDCNQI/Metal (source). The characteristics of the vertical type OFET were investigated from the measurements of current-voltage characteristics, contact resistance and device durability. In particular, the device consisting of ITO/TriF-IF-dione/LiAl/ TriF-IFdione/ DMDCNQI/LiAl showed a low turn-on voltage and a high on/off ratio of 60×103.

AB - We have fabricated a vertical type organic field effect transistor (OFET) using indenofluorenedione derivatives (IF-dione-F) as an n-type organic active material and dimethyldicyanoquinonediimine (DMDCNQI) as an n-type buffer layer. The configuration of the vertical type OFET was ITO (drain)/ IF-dione-F/Metal (gate)/IF-dione-F/DMDCNQI/Metal (source). The characteristics of the vertical type OFET were investigated from the measurements of current-voltage characteristics, contact resistance and device durability. In particular, the device consisting of ITO/TriF-IF-dione/LiAl/ TriF-IFdione/ DMDCNQI/LiAl showed a low turn-on voltage and a high on/off ratio of 60×103.

UR - http://www.scopus.com/inward/record.url?scp=84891644660&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84891644660&partnerID=8YFLogxK

U2 - 10.1166/jnn.2013.8156

DO - 10.1166/jnn.2013.8156

M3 - Article

C2 - 24266183

AN - SCOPUS:84891644660

VL - 13

SP - 8016

EP - 8019

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 12

ER -