Study of growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on nanometer-scale patterned SiO2/Si(001) substrates

Tae Sik Yoon, Hyun Mi Kim, Ki Bum Kim, Du Yeol Ryu, Thomas P. Russell, Zuoming Zhao, Jian Liu, Ya Hong Xie

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on patterned SiO2/Si(001) substrates by molecular beam epitaxy were studied. The hexagonally ordered Si holes with 30 nm thick SiO2 mask layer having ~25 nm diameter, ~40 nm center-to-center distance, and density of ~7 × 1010 cm-2, were formed using self-assembled diblock copolymer, composed of polystyrene and poly(methyl methacrylate) (PS-b-PMMA). The multiple Ge nuclei are selectively formed along the periphery of the individual Si holes and these nuclei subsequently coalesce forming single dot with an identical size of patterns. The strain of dots is relaxed up to 80%. The lattice planes of some Ge dots are found to be tilted from those of Si substrates. The Ge dots have dislocations at the interface with Si substrate even at the small size of ~25 nm, resulting from the limited elastic relaxation in the confined patterned structure.

Original languageEnglish
Pages (from-to)721-724
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume246
Issue number4
DOIs
Publication statusPublished - 2009 Apr 1

Fingerprint

Semiconductor quantum dots
quantum dots
microstructure
Microstructure
Substrates
nuclei
Polystyrenes
Polymethyl Methacrylate
Polymethyl methacrylates
polymethyl methacrylate
Molecular beam epitaxy
Block copolymers
Masks
polystyrene
copolymers
molecular beam epitaxy
masks
polystyrene-block-poly(methyl methacrylate)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Yoon, Tae Sik ; Kim, Hyun Mi ; Kim, Ki Bum ; Ryu, Du Yeol ; Russell, Thomas P. ; Zhao, Zuoming ; Liu, Jian ; Xie, Ya Hong. / Study of growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on nanometer-scale patterned SiO2/Si(001) substrates. In: Physica Status Solidi (B) Basic Research. 2009 ; Vol. 246, No. 4. pp. 721-724.
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abstract = "The growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on patterned SiO2/Si(001) substrates by molecular beam epitaxy were studied. The hexagonally ordered Si holes with 30 nm thick SiO2 mask layer having ~25 nm diameter, ~40 nm center-to-center distance, and density of ~7 × 1010 cm-2, were formed using self-assembled diblock copolymer, composed of polystyrene and poly(methyl methacrylate) (PS-b-PMMA). The multiple Ge nuclei are selectively formed along the periphery of the individual Si holes and these nuclei subsequently coalesce forming single dot with an identical size of patterns. The strain of dots is relaxed up to 80{\%}. The lattice planes of some Ge dots are found to be tilted from those of Si substrates. The Ge dots have dislocations at the interface with Si substrate even at the small size of ~25 nm, resulting from the limited elastic relaxation in the confined patterned structure.",
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Study of growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on nanometer-scale patterned SiO2/Si(001) substrates. / Yoon, Tae Sik; Kim, Hyun Mi; Kim, Ki Bum; Ryu, Du Yeol; Russell, Thomas P.; Zhao, Zuoming; Liu, Jian; Xie, Ya Hong.

In: Physica Status Solidi (B) Basic Research, Vol. 246, No. 4, 01.04.2009, p. 721-724.

Research output: Contribution to journalArticle

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AU - Yoon, Tae Sik

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AU - Kim, Ki Bum

AU - Ryu, Du Yeol

AU - Russell, Thomas P.

AU - Zhao, Zuoming

AU - Liu, Jian

AU - Xie, Ya Hong

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N2 - The growth behaviour and microstructure of epitaxially grown self-assembled Ge quantum dots on patterned SiO2/Si(001) substrates by molecular beam epitaxy were studied. The hexagonally ordered Si holes with 30 nm thick SiO2 mask layer having ~25 nm diameter, ~40 nm center-to-center distance, and density of ~7 × 1010 cm-2, were formed using self-assembled diblock copolymer, composed of polystyrene and poly(methyl methacrylate) (PS-b-PMMA). The multiple Ge nuclei are selectively formed along the periphery of the individual Si holes and these nuclei subsequently coalesce forming single dot with an identical size of patterns. The strain of dots is relaxed up to 80%. The lattice planes of some Ge dots are found to be tilted from those of Si substrates. The Ge dots have dislocations at the interface with Si substrate even at the small size of ~25 nm, resulting from the limited elastic relaxation in the confined patterned structure.

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