Study of hafnium silicate treated with NO Gas annealing

Dong Chan Suh, Dae Hong Ko, Mann-Ho Cho, Kwun Bum Chung

Research output: Contribution to journalArticle

Abstract

The physical and the electrical properties of nitrided hafnium-silicate films treated with NO gas annealing were investigated using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and capacitance-voltage measurements. We confirmed that nitrogen incorporation during the NO gas annealing treatment enhanced the thermal stability of Hf silicate. The suppression of phase separation was observed in hafnium-silicate films with high nitrogen contents. Moreover, small hysteresis changes were observed in the C-V curves. The negative shift of the threshold voltage was caused by the incorporation of nitrogen in the hafnium silicate films.

Original languageEnglish
Pages (from-to)637-642
Number of pages6
JournalJournal of the Korean Physical Society
Volume54
Issue number2
DOIs
Publication statusPublished - 2009 Feb 1

Fingerprint

hafnium
silicates
annealing
gases
nitrogen
threshold voltage
electrical measurement
x rays
thermal stability
capacitance
fine structure
hysteresis
electrical properties
retarding
photoelectron spectroscopy
transmission electron microscopy
shift
high resolution
curves

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{cc69c3764e3846b8b36dcb86212b6b15,
title = "Study of hafnium silicate treated with NO Gas annealing",
abstract = "The physical and the electrical properties of nitrided hafnium-silicate films treated with NO gas annealing were investigated using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and capacitance-voltage measurements. We confirmed that nitrogen incorporation during the NO gas annealing treatment enhanced the thermal stability of Hf silicate. The suppression of phase separation was observed in hafnium-silicate films with high nitrogen contents. Moreover, small hysteresis changes were observed in the C-V curves. The negative shift of the threshold voltage was caused by the incorporation of nitrogen in the hafnium silicate films.",
author = "Suh, {Dong Chan} and Ko, {Dae Hong} and Mann-Ho Cho and Chung, {Kwun Bum}",
year = "2009",
month = "2",
day = "1",
doi = "10.3938/jkps.54.637",
language = "English",
volume = "54",
pages = "637--642",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "2",

}

Study of hafnium silicate treated with NO Gas annealing. / Suh, Dong Chan; Ko, Dae Hong; Cho, Mann-Ho; Chung, Kwun Bum.

In: Journal of the Korean Physical Society, Vol. 54, No. 2, 01.02.2009, p. 637-642.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Study of hafnium silicate treated with NO Gas annealing

AU - Suh, Dong Chan

AU - Ko, Dae Hong

AU - Cho, Mann-Ho

AU - Chung, Kwun Bum

PY - 2009/2/1

Y1 - 2009/2/1

N2 - The physical and the electrical properties of nitrided hafnium-silicate films treated with NO gas annealing were investigated using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and capacitance-voltage measurements. We confirmed that nitrogen incorporation during the NO gas annealing treatment enhanced the thermal stability of Hf silicate. The suppression of phase separation was observed in hafnium-silicate films with high nitrogen contents. Moreover, small hysteresis changes were observed in the C-V curves. The negative shift of the threshold voltage was caused by the incorporation of nitrogen in the hafnium silicate films.

AB - The physical and the electrical properties of nitrided hafnium-silicate films treated with NO gas annealing were investigated using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and capacitance-voltage measurements. We confirmed that nitrogen incorporation during the NO gas annealing treatment enhanced the thermal stability of Hf silicate. The suppression of phase separation was observed in hafnium-silicate films with high nitrogen contents. Moreover, small hysteresis changes were observed in the C-V curves. The negative shift of the threshold voltage was caused by the incorporation of nitrogen in the hafnium silicate films.

UR - http://www.scopus.com/inward/record.url?scp=62149093553&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62149093553&partnerID=8YFLogxK

U2 - 10.3938/jkps.54.637

DO - 10.3938/jkps.54.637

M3 - Article

VL - 54

SP - 637

EP - 642

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 2

ER -