Study of HfO 2 high-k gate oxide for low-temperature poly-Si TFT

Ji Sim Jung, Jang-Yeon Kwon, Wenxu Xianyu, Takashi Noguchi, Seong Hoon Jeong, Seok Won Jeong, Yonghan Roh, Takashi Noguchi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigated HfO 2 /SiO 2 thin film and found that it is a suitable candidate for an alternate gate insulator of SiO 2 in thin film transistors (TFTs). Ultra thin SiO 2 of 8.5 nm was deposited by inductively coupled plasma chemical vapor deposition (ICP CVD) below 200 °C. Thin sputtered Hf metal films were oxidized and subsequently annealed under O 2 and N 2 ambient, respectively, to form polycrystalline HfO 2 thin films simultaneously. We achieved a low leakage current level of 6.97 × 10 -7 A/cm 2 at -10 V and low EOT by HfO 2 /SiO 2 double-layer structure.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume48
Issue numberSUPPL. 1
Publication statusPublished - 2006 Jan 1

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transistors
oxides
thin films
metal films
leakage
insulators
vapor deposition

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Jung, J. S., Kwon, J-Y., Xianyu, W., Noguchi, T., Jeong, S. H., Jeong, S. W., ... Noguchi, T. (2006). Study of HfO 2 high-k gate oxide for low-temperature poly-Si TFT Journal of the Korean Physical Society, 48(SUPPL. 1).
Jung, Ji Sim ; Kwon, Jang-Yeon ; Xianyu, Wenxu ; Noguchi, Takashi ; Jeong, Seong Hoon ; Jeong, Seok Won ; Roh, Yonghan ; Noguchi, Takashi. / Study of HfO 2 high-k gate oxide for low-temperature poly-Si TFT In: Journal of the Korean Physical Society. 2006 ; Vol. 48, No. SUPPL. 1.
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abstract = "We investigated HfO 2 /SiO 2 thin film and found that it is a suitable candidate for an alternate gate insulator of SiO 2 in thin film transistors (TFTs). Ultra thin SiO 2 of 8.5 nm was deposited by inductively coupled plasma chemical vapor deposition (ICP CVD) below 200 °C. Thin sputtered Hf metal films were oxidized and subsequently annealed under O 2 and N 2 ambient, respectively, to form polycrystalline HfO 2 thin films simultaneously. We achieved a low leakage current level of 6.97 × 10 -7 A/cm 2 at -10 V and low EOT by HfO 2 /SiO 2 double-layer structure.",
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Jung, JS, Kwon, J-Y, Xianyu, W, Noguchi, T, Jeong, SH, Jeong, SW, Roh, Y & Noguchi, T 2006, ' Study of HfO 2 high-k gate oxide for low-temperature poly-Si TFT ', Journal of the Korean Physical Society, vol. 48, no. SUPPL. 1.

Study of HfO 2 high-k gate oxide for low-temperature poly-Si TFT . / Jung, Ji Sim; Kwon, Jang-Yeon; Xianyu, Wenxu; Noguchi, Takashi; Jeong, Seong Hoon; Jeong, Seok Won; Roh, Yonghan; Noguchi, Takashi.

In: Journal of the Korean Physical Society, Vol. 48, No. SUPPL. 1, 01.01.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Study of HfO 2 high-k gate oxide for low-temperature poly-Si TFT

AU - Jung, Ji Sim

AU - Kwon, Jang-Yeon

AU - Xianyu, Wenxu

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AU - Jeong, Seong Hoon

AU - Jeong, Seok Won

AU - Roh, Yonghan

AU - Noguchi, Takashi

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N2 - We investigated HfO 2 /SiO 2 thin film and found that it is a suitable candidate for an alternate gate insulator of SiO 2 in thin film transistors (TFTs). Ultra thin SiO 2 of 8.5 nm was deposited by inductively coupled plasma chemical vapor deposition (ICP CVD) below 200 °C. Thin sputtered Hf metal films were oxidized and subsequently annealed under O 2 and N 2 ambient, respectively, to form polycrystalline HfO 2 thin films simultaneously. We achieved a low leakage current level of 6.97 × 10 -7 A/cm 2 at -10 V and low EOT by HfO 2 /SiO 2 double-layer structure.

AB - We investigated HfO 2 /SiO 2 thin film and found that it is a suitable candidate for an alternate gate insulator of SiO 2 in thin film transistors (TFTs). Ultra thin SiO 2 of 8.5 nm was deposited by inductively coupled plasma chemical vapor deposition (ICP CVD) below 200 °C. Thin sputtered Hf metal films were oxidized and subsequently annealed under O 2 and N 2 ambient, respectively, to form polycrystalline HfO 2 thin films simultaneously. We achieved a low leakage current level of 6.97 × 10 -7 A/cm 2 at -10 V and low EOT by HfO 2 /SiO 2 double-layer structure.

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Jung JS, Kwon J-Y, Xianyu W, Noguchi T, Jeong SH, Jeong SW et al. Study of HfO 2 high-k gate oxide for low-temperature poly-Si TFT Journal of the Korean Physical Society. 2006 Jan 1;48(SUPPL. 1).