Study of HfO 2 high-k gate oxide for low-temperature poly-Si TFT

Ji Sim Jung, Jang Yeon Kwon, Wenxu Xianyu, Takashi Noguchi, Seong Hoon Jeong, Seok Won Jeong, Yonghan Roh, Takashi Noguchi

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2 Citations (Scopus)

Abstract

We investigated HfO 2/SiO 2 thin film and found that it is a suitable candidate for an alternate gate insulator of SiO 2 in thin film transistors (TFTs). Ultra thin SiO 2 of 8.5 nm was deposited by inductively coupled plasma chemical vapor deposition (ICP CVD) below 200 °C. Thin sputtered Hf metal films were oxidized and subsequently annealed under O 2 and N 2 ambient, respectively, to form polycrystalline HfO 2 thin films simultaneously. We achieved a low leakage current level of 6.97 × 10 -7 A/cm 2 at -10 V and low EOT by HfO 2/SiO 2 double-layer structure.

Original languageEnglish
Pages (from-to)S32-S34
JournalJournal of the Korean Physical Society
Volume48
Issue numberSUPPL. 1
Publication statusPublished - 2006 Jan 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Jung, J. S., Kwon, J. Y., Xianyu, W., Noguchi, T., Jeong, S. H., Jeong, S. W., Roh, Y., & Noguchi, T. (2006). Study of HfO 2 high-k gate oxide for low-temperature poly-Si TFT. Journal of the Korean Physical Society, 48(SUPPL. 1), S32-S34.