We investigated HfO 2/SiO 2 thin film and found that it is a suitable candidate for an alternate gate insulator of SiO 2 in thin film transistors (TFTs). Ultra thin SiO 2 of 8.5 nm was deposited by inductively coupled plasma chemical vapor deposition (ICP CVD) below 200 °C. Thin sputtered Hf metal films were oxidized and subsequently annealed under O 2 and N 2 ambient, respectively, to form polycrystalline HfO 2 thin films simultaneously. We achieved a low leakage current level of 6.97 × 10 -7 A/cm 2 at -10 V and low EOT by HfO 2/SiO 2 double-layer structure.
|Journal||Journal of the Korean Physical Society|
|Issue number||SUPPL. 1|
|Publication status||Published - 2006 Jan 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)