We investigated defect generation in GaAs and InP on various blanket Si substrates and Si patterns with nanosized trench structures via transmission electron microscopy. The dependences of types of defects on the substrate orientation and the pattern size in GaAs and InP on nanosized patterns were analyzed. Defects that formed in a specific direction, and shapes similar to those stacking faults or twin boundaries (TWs) were confirmed. Moreover, we observed that unusual directional defects could not be effectively trapped by using aspect ratio trapping techniques owing to their various angles. The multi-twin (M-TW) angles generated from the original TW were calculated and projected in a pole figure by using the stereographic projection technique. Moreover, M-TW defects were illustrated via 3D computer graphics simulations.
Bibliographical noteFunding Information:
This study was financially supported by the IT R&D program of Ministry of Knowledge Economy/Korea Evaluation Institute of Industrial Technology (10067739, Development of Core Technologies for <5-nm Next-Generation Logic Devices).
© 2020, The Korean Physical Society.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)