Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors

Seokhyun Yoon, Young Jun Tak, Doo Hyun Yoon, Uy Hyun Choi, Jin Seong Park, Byung Du Ahn, Heon Je Kim

Research output: Contribution to journalArticle

33 Citations (Scopus)
Original languageEnglish
Pages (from-to)13496
Number of pages13501
JournalACS applied materials & interfaces
Volume6
Issue number16
Publication statusPublished - 2014 Aug

Cite this

Yoon, S., Tak, Y. J., Yoon, D. H., Choi, U. H., Park, J. S., Ahn, B. D., & Kim, H. J. (2014). Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors. ACS applied materials & interfaces, 6(16), 13496.