Study of quasi-two-dimensional hole gas in Si/SixGe1-x/Si quantum wells

Sanghoon Cheon, Seungchang Lee, Songcheol Hong, Kyeonghwa Yoo

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Quasi-two-dimensional hole gas in strained Si/SixGe1-x/Si quantum well structure is investigated both theoretically and experimentally. The hole effective mass and the charge distribution in the structure are obtained from the self-consistent solution of the Schrödinger-Poisson equations. The calculation results show the dependence of the averaged mass on the measurement temperature and the averaged mass of 0.20 m0 at T = 4 K. High quality Si/Si0.8Ge0.2/Si p-type modulation-doped quantum well is grown by molecular beam epitaxy and the electrical properties measured. Hall mobility as high as ∼10,400 cm2/V·s with a sheet carrier concentration of ∼ 1.1 × 1012 cm-2 and an effective mass of ∼ 0.30 m0 is obtained at T = 4 K.

Original languageEnglish
Pages (from-to)849-852
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number2 SUPPL. B
Publication statusPublished - 1996 Feb

Bibliographical note

Funding Information:
Acknowledgement--This work is partially supported by KOSEF.

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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