Quasi-two-dimensional hole gas in strained Si/SixGe1-x/Si quantum well structure is investigated both theoretically and experimentally. The hole effective mass and the charge distribution in the structure are obtained from the self-consistent solution of the Schrödinger-Poisson equations. The calculation results show the dependence of the averaged mass on the measurement temperature and the averaged mass of 0.20 m0 at T = 4 K. High quality Si/Si0.8Ge0.2/Si p-type modulation-doped quantum well is grown by molecular beam epitaxy and the electrical properties measured. Hall mobility as high as ∼10,400 cm2/V·s with a sheet carrier concentration of ∼ 1.1 × 1012 cm-2 and an effective mass of ∼ 0.30 m0 is obtained at T = 4 K.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||2 SUPPL. B|
|Publication status||Published - 1996 Feb|
Bibliographical noteFunding Information:
Acknowledgement--This work is partially supported by KOSEF.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)