### Abstract

Quasi-two-dimensional hole gas in strained Si/Si_{x}Ge_{1-x}/Si quantum well structure is investigated both theoretically and experimentally. The hole effective mass and the charge distribution in the structure are obtained from the self-consistent solution of the Schrödinger-Poisson equations. The calculation results show the dependence of the averaged mass on the measurement temperature and the averaged mass of 0.20 m_{0} at T = 4 K. High quality Si/Si_{0.8}Ge_{0.2}/Si p-type modulation-doped quantum well is grown by molecular beam epitaxy and the electrical properties measured. Hall mobility as high as ∼10,400 cm^{2}/V·s with a sheet carrier concentration of ∼ 1.1 × 10^{12} cm^{-2} and an effective mass of ∼ 0.30 m_{0} is obtained at T = 4 K.

Original language | English |
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Pages (from-to) | 849-852 |

Number of pages | 4 |

Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |

Volume | 35 |

Issue number | 2 SUPPL. B |

Publication status | Published - 1996 Feb 1 |

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### All Science Journal Classification (ASJC) codes

- Engineering(all)
- Physics and Astronomy(all)

### Cite this

_{x}Ge

_{1-x}/Si quantum wells.

*Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers*,

*35*(2 SUPPL. B), 849-852.