Study of quasi-two dimensional hole gas in Si/SixGe1-x/Si quantum wells

S. Cheon, S. C. Lee, S. Hong, K. H. Yoo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Quasi-two-dimensional hole gas in a strained Si/SixGe1-x/Si quantum well structure is investigated both theoretically and experimentally. The hole effective mass and the charge distribution in the structure are achieved from the self-consistent solution of the Schrödinger-Poisson equations. The band mixing effect with split-off band is included by using the 3 × 3 multiband effective mass model. High quality Si/Si0.8Ge0.2/Si p-type modulation doped quantum well has been grown by molecular beam epitaxy and the electrical properties have been measured at different temperatures. Hole mobility as high as ∼ 10,400cm2/V with a sheet carrier concentration of ∼ 1.1 × 1012 and the effective mass of ∼0.3 m0 are obtained at T = 4 K. These values are in fairly good agreement with theoretical predictions.

Original languageEnglish
Pages (from-to)7-13
Number of pages7
JournalSolid-State Electronics
Volume39
Issue number1
DOIs
Publication statusPublished - 1996 Jan 1

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this