Quasi-two-dimensional hole gas in a strained Si/SixGe1-x/Si quantum well structure is investigated both theoretically and experimentally. The hole effective mass and the charge distribution in the structure are achieved from the self-consistent solution of the Schrödinger-Poisson equations. The band mixing effect with split-off band is included by using the 3 × 3 multiband effective mass model. High quality Si/Si0.8Ge0.2/Si p-type modulation doped quantum well has been grown by molecular beam epitaxy and the electrical properties have been measured at different temperatures. Hole mobility as high as ∼ 10,400cm2/V with a sheet carrier concentration of ∼ 1.1 × 1012 and the effective mass of ∼0.3 m0 are obtained at T = 4 K. These values are in fairly good agreement with theoretical predictions.
Bibliographical noteFunding Information:
Acknowledgement--This work is partially supported by KOSEF.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry