Study of quasi-two dimensional hole gas in Si/SixGe1-x/Si quantum wells

S. Cheon, S. C. Lee, S. Hong, Kyung-hwa Yoo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Quasi-two-dimensional hole gas in a strained Si/SixGe1-x/Si quantum well structure is investigated both theoretically and experimentally. The hole effective mass and the charge distribution in the structure are achieved from the self-consistent solution of the Schrödinger-Poisson equations. The band mixing effect with split-off band is included by using the 3 × 3 multiband effective mass model. High quality Si/Si0.8Ge0.2/Si p-type modulation doped quantum well has been grown by molecular beam epitaxy and the electrical properties have been measured at different temperatures. Hole mobility as high as ∼ 10,400cm2/V with a sheet carrier concentration of ∼ 1.1 × 1012 and the effective mass of ∼0.3 m0 are obtained at T = 4 K. These values are in fairly good agreement with theoretical predictions.

Original languageEnglish
Pages (from-to)7-13
Number of pages7
JournalSolid-State Electronics
Volume39
Issue number1
DOIs
Publication statusPublished - 1996 Jan 1

Fingerprint

Semiconductor quantum wells
Gases
quantum wells
Hole mobility
Charge distribution
Poisson equation
gases
Molecular beam epitaxy
Carrier concentration
Electric properties
Modulation
hole mobility
charge distribution
molecular beam epitaxy
electrical properties
modulation
predictions
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Cheon, S. ; Lee, S. C. ; Hong, S. ; Yoo, Kyung-hwa. / Study of quasi-two dimensional hole gas in Si/SixGe1-x/Si quantum wells. In: Solid-State Electronics. 1996 ; Vol. 39, No. 1. pp. 7-13.
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Study of quasi-two dimensional hole gas in Si/SixGe1-x/Si quantum wells. / Cheon, S.; Lee, S. C.; Hong, S.; Yoo, Kyung-hwa.

In: Solid-State Electronics, Vol. 39, No. 1, 01.01.1996, p. 7-13.

Research output: Contribution to journalArticle

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AU - Cheon, S.

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AU - Hong, S.

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AB - Quasi-two-dimensional hole gas in a strained Si/SixGe1-x/Si quantum well structure is investigated both theoretically and experimentally. The hole effective mass and the charge distribution in the structure are achieved from the self-consistent solution of the Schrödinger-Poisson equations. The band mixing effect with split-off band is included by using the 3 × 3 multiband effective mass model. High quality Si/Si0.8Ge0.2/Si p-type modulation doped quantum well has been grown by molecular beam epitaxy and the electrical properties have been measured at different temperatures. Hole mobility as high as ∼ 10,400cm2/V with a sheet carrier concentration of ∼ 1.1 × 1012 and the effective mass of ∼0.3 m0 are obtained at T = 4 K. These values are in fairly good agreement with theoretical predictions.

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