@inproceedings{e3a9ba9222d244ee9c7d31b86669d91a,
title = "Study of radiation resistance property of a- IGZO thin film transistors",
abstract = "Amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin film transistors (TFTs) were fabricated on 1737 corning glass are investigated effects of 8-MeV electron irradiation with different irradiation dosage on the different parameters of a-IGZO thin film transistors. The thin film transistors show slight degradation for dosage greater than 1kGy. After radiation, a decrease of saturation electron mobility () was observed. The experimental results show threshold voltage(Vth) and Ion /Ioff ratio were increased after radiation. Initially the sub threshold swing(SS) increased and remained constant after 10kGy electron irradiation. However there is no drastic variation in device parameters, hence these TFTs can be used in spacecraft environments and nuclear plants .",
author = "Dayananda, {G. K.} and Shantharama, {Rai C.} and A. Jayarama and Kim, {Hyun Jae}",
year = "2017",
month = jan
day = "5",
doi = "10.1109/RTEICT.2016.7808148",
language = "English",
series = "2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1816--1819",
booktitle = "2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings",
address = "United States",
note = "1st IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 ; Conference date: 20-05-2016 Through 21-05-2016",
}