Study of radiation resistance property of a- IGZO thin film transistors

G. K. Dayananda, Rai C. Shantharama, A. Jayarama, Hyun Jae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin film transistors (TFTs) were fabricated on 1737 corning glass are investigated effects of 8-MeV electron irradiation with different irradiation dosage on the different parameters of a-IGZO thin film transistors. The thin film transistors show slight degradation for dosage greater than 1kGy. After radiation, a decrease of saturation electron mobility () was observed. The experimental results show threshold voltage(Vth) and Ion /Ioff ratio were increased after radiation. Initially the sub threshold swing(SS) increased and remained constant after 10kGy electron irradiation. However there is no drastic variation in device parameters, hence these TFTs can be used in spacecraft environments and nuclear plants .

Original languageEnglish
Title of host publication2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1816-1819
Number of pages4
ISBN (Electronic)9781509007745
DOIs
Publication statusPublished - 2017 Jan 5
Event1st IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Bangalore, India
Duration: 2016 May 202016 May 21

Publication series

Name2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings

Other

Other1st IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016
CountryIndia
CityBangalore
Period16/5/2016/5/21

Fingerprint

Thin film transistors
Radiation
Electron irradiation
Gallium
Zinc oxide
Indium
Oxide films
Electron mobility
Threshold voltage
Spacecraft
Irradiation
Degradation
Glass
Ions

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Computer Science Applications
  • Information Systems
  • Electrical and Electronic Engineering

Cite this

Dayananda, G. K., Shantharama, R. C., Jayarama, A., & Kim, H. J. (2017). Study of radiation resistance property of a- IGZO thin film transistors. In 2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings (pp. 1816-1819). [7808148] (2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RTEICT.2016.7808148
Dayananda, G. K. ; Shantharama, Rai C. ; Jayarama, A. ; Kim, Hyun Jae. / Study of radiation resistance property of a- IGZO thin film transistors. 2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1816-1819 (2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings).
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Dayananda, GK, Shantharama, RC, Jayarama, A & Kim, HJ 2017, Study of radiation resistance property of a- IGZO thin film transistors. in 2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings., 7808148, 2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 1816-1819, 1st IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016, Bangalore, India, 16/5/20. https://doi.org/10.1109/RTEICT.2016.7808148

Study of radiation resistance property of a- IGZO thin film transistors. / Dayananda, G. K.; Shantharama, Rai C.; Jayarama, A.; Kim, Hyun Jae.

2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1816-1819 7808148 (2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Study of radiation resistance property of a- IGZO thin film transistors

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N2 - Amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin film transistors (TFTs) were fabricated on 1737 corning glass are investigated effects of 8-MeV electron irradiation with different irradiation dosage on the different parameters of a-IGZO thin film transistors. The thin film transistors show slight degradation for dosage greater than 1kGy. After radiation, a decrease of saturation electron mobility () was observed. The experimental results show threshold voltage(Vth) and Ion /Ioff ratio were increased after radiation. Initially the sub threshold swing(SS) increased and remained constant after 10kGy electron irradiation. However there is no drastic variation in device parameters, hence these TFTs can be used in spacecraft environments and nuclear plants .

AB - Amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin film transistors (TFTs) were fabricated on 1737 corning glass are investigated effects of 8-MeV electron irradiation with different irradiation dosage on the different parameters of a-IGZO thin film transistors. The thin film transistors show slight degradation for dosage greater than 1kGy. After radiation, a decrease of saturation electron mobility () was observed. The experimental results show threshold voltage(Vth) and Ion /Ioff ratio were increased after radiation. Initially the sub threshold swing(SS) increased and remained constant after 10kGy electron irradiation. However there is no drastic variation in device parameters, hence these TFTs can be used in spacecraft environments and nuclear plants .

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Dayananda GK, Shantharama RC, Jayarama A, Kim HJ. Study of radiation resistance property of a- IGZO thin film transistors. In 2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1816-1819. 7808148. (2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings). https://doi.org/10.1109/RTEICT.2016.7808148