Study of radiation resistance property of a- IGZO thin film transistors

G. K. Dayananda; Rai C. Shantharama; A. Jayarama; Hyun Jae Kim

doi:10.1109/RTEICT.2016.7808148

Study of radiation resistance property of a- IGZO thin film transistors

G. K. Dayananda, Rai C. Shantharama, A. Jayarama, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin film transistors (TFTs) were fabricated on 1737 corning glass are investigated effects of 8-MeV electron irradiation with different irradiation dosage on the different parameters of a-IGZO thin film transistors. The thin film transistors show slight degradation for dosage greater than 1kGy. After radiation, a decrease of saturation electron mobility () was observed. The experimental results show threshold voltage(Vth) and Ion /Ioff ratio were increased after radiation. Initially the sub threshold swing(SS) increased and remained constant after 10kGy electron irradiation. However there is no drastic variation in device parameters, hence these TFTs can be used in spacecraft environments and nuclear plants .

Original language	English
Title of host publication	2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1816-1819
Number of pages	4
ISBN (Electronic)	9781509007745
DOIs	https://doi.org/10.1109/RTEICT.2016.7808148
Publication status	Published - 2017 Jan 5
Event	1st IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Bangalore, India Duration: 2016 May 20 → 2016 May 21

Publication series

Name	2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings

Other

Other	1st IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016
Country/Territory	India
City	Bangalore
Period	16/5/20 → 16/5/21

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Computer Science Applications
Information Systems
Electrical and Electronic Engineering

Access to Document

10.1109/RTEICT.2016.7808148

Cite this

Dayananda, G. K., Shantharama, R. C., Jayarama, A., & Kim, H. J. (2017). Study of radiation resistance property of a- IGZO thin film transistors. In 2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings (pp. 1816-1819). [7808148] (2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RTEICT.2016.7808148

Dayananda, G. K. ; Shantharama, Rai C. ; Jayarama, A. et al. / Study of radiation resistance property of a- IGZO thin film transistors. 2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1816-1819 (2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings).

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abstract = "Amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin film transistors (TFTs) were fabricated on 1737 corning glass are investigated effects of 8-MeV electron irradiation with different irradiation dosage on the different parameters of a-IGZO thin film transistors. The thin film transistors show slight degradation for dosage greater than 1kGy. After radiation, a decrease of saturation electron mobility () was observed. The experimental results show threshold voltage(Vth) and Ion /Ioff ratio were increased after radiation. Initially the sub threshold swing(SS) increased and remained constant after 10kGy electron irradiation. However there is no drastic variation in device parameters, hence these TFTs can be used in spacecraft environments and nuclear plants .",

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Dayananda, GK, Shantharama, RC, Jayarama, A & Kim, HJ 2017, Study of radiation resistance property of a- IGZO thin film transistors. in 2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings., 7808148, 2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 1816-1819, 1st IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016, Bangalore, India, 16/5/20. https://doi.org/10.1109/RTEICT.2016.7808148

Study of radiation resistance property of a- IGZO thin film transistors. / Dayananda, G. K.; Shantharama, Rai C.; Jayarama, A. et al.

2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1816-1819 7808148 (2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - Amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin film transistors (TFTs) were fabricated on 1737 corning glass are investigated effects of 8-MeV electron irradiation with different irradiation dosage on the different parameters of a-IGZO thin film transistors. The thin film transistors show slight degradation for dosage greater than 1kGy. After radiation, a decrease of saturation electron mobility () was observed. The experimental results show threshold voltage(Vth) and Ion /Ioff ratio were increased after radiation. Initially the sub threshold swing(SS) increased and remained constant after 10kGy electron irradiation. However there is no drastic variation in device parameters, hence these TFTs can be used in spacecraft environments and nuclear plants .

AB - Amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin film transistors (TFTs) were fabricated on 1737 corning glass are investigated effects of 8-MeV electron irradiation with different irradiation dosage on the different parameters of a-IGZO thin film transistors. The thin film transistors show slight degradation for dosage greater than 1kGy. After radiation, a decrease of saturation electron mobility () was observed. The experimental results show threshold voltage(Vth) and Ion /Ioff ratio were increased after radiation. Initially the sub threshold swing(SS) increased and remained constant after 10kGy electron irradiation. However there is no drastic variation in device parameters, hence these TFTs can be used in spacecraft environments and nuclear plants .

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Dayananda GK, Shantharama RC, Jayarama A, Kim HJ. Study of radiation resistance property of a- IGZO thin film transistors. In 2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1816-1819. 7808148. (2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings). doi: 10.1109/RTEICT.2016.7808148

Study of radiation resistance property of a- IGZO thin film transistors

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