Abstract
Amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin film transistors (TFTs) were fabricated on 1737 corning glass are investigated effects of 8-MeV electron irradiation with different irradiation dosage on the different parameters of a-IGZO thin film transistors. The thin film transistors show slight degradation for dosage greater than 1kGy. After radiation, a decrease of saturation electron mobility () was observed. The experimental results show threshold voltage(Vth) and Ion /Ioff ratio were increased after radiation. Initially the sub threshold swing(SS) increased and remained constant after 10kGy electron irradiation. However there is no drastic variation in device parameters, hence these TFTs can be used in spacecraft environments and nuclear plants .
| Original language | English |
|---|---|
| Title of host publication | 2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1816-1819 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781509007745 |
| DOIs | |
| Publication status | Published - 2017 Jan 5 |
| Event | 1st IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Bangalore, India Duration: 2016 May 20 → 2016 May 21 |
Publication series
| Name | 2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings |
|---|
Other
| Other | 1st IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 |
|---|---|
| Country | India |
| City | Bangalore |
| Period | 16/5/20 → 16/5/21 |
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All Science Journal Classification (ASJC) codes
- Computer Networks and Communications
- Computer Science Applications
- Information Systems
- Electrical and Electronic Engineering
Cite this
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Study of radiation resistance property of a- IGZO thin film transistors. / Dayananda, G. K.; Shantharama, Rai C.; Jayarama, A.; Kim, Hyun Jae.
2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1816-1819 7808148 (2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Study of radiation resistance property of a- IGZO thin film transistors
AU - Dayananda, G. K.
AU - Shantharama, Rai C.
AU - Jayarama, A.
AU - Kim, Hyun Jae
PY - 2017/1/5
Y1 - 2017/1/5
N2 - Amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin film transistors (TFTs) were fabricated on 1737 corning glass are investigated effects of 8-MeV electron irradiation with different irradiation dosage on the different parameters of a-IGZO thin film transistors. The thin film transistors show slight degradation for dosage greater than 1kGy. After radiation, a decrease of saturation electron mobility () was observed. The experimental results show threshold voltage(Vth) and Ion /Ioff ratio were increased after radiation. Initially the sub threshold swing(SS) increased and remained constant after 10kGy electron irradiation. However there is no drastic variation in device parameters, hence these TFTs can be used in spacecraft environments and nuclear plants .
AB - Amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin film transistors (TFTs) were fabricated on 1737 corning glass are investigated effects of 8-MeV electron irradiation with different irradiation dosage on the different parameters of a-IGZO thin film transistors. The thin film transistors show slight degradation for dosage greater than 1kGy. After radiation, a decrease of saturation electron mobility () was observed. The experimental results show threshold voltage(Vth) and Ion /Ioff ratio were increased after radiation. Initially the sub threshold swing(SS) increased and remained constant after 10kGy electron irradiation. However there is no drastic variation in device parameters, hence these TFTs can be used in spacecraft environments and nuclear plants .
UR - http://www.scopus.com/inward/record.url?scp=85015002517&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85015002517&partnerID=8YFLogxK
U2 - 10.1109/RTEICT.2016.7808148
DO - 10.1109/RTEICT.2016.7808148
M3 - Conference contribution
AN - SCOPUS:85015002517
T3 - 2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings
SP - 1816
EP - 1819
BT - 2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -