Study of the effect of stress/strain of mesoporous Al-doped ZnO thin films on thermoelectric properties

Min Hee Hong; Haryeong Choi; Dong Il Shim; Hyung Hee Cho; Jiwan Kim; Hyung Ho Park

doi:10.1016/j.solidstatesciences.2018.05.010

Study of the effect of stress/strain of mesoporous Al-doped ZnO thin films on thermoelectric properties

Min Hee Hong, Haryeong Choi, Dong Il Shim, Hyung Hee Cho, Jiwan Kim, Hyung Ho Park

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

In this study, effects of induced stress and strain on the thermoelectric properties of mesoporous ZnO thin films with various Al doping concentrations were investigated. With Al doping in ZnO structure, the hexagonal wurtzite structure of ZnO was distorted owing to an ionic size difference between Al and Zn. With an increase in Al concentration to 4 at%, thermal conductivity unexpectedly decreased from 1.70 to 1.24 W/mK owing to an increase in the tensile strain, and electrical conductivity increased from 4 S/cm to 15 S/cm owing to an increase in the carrier concentration. Based on this study, the relationship between the induced strain owing to lattice distortion and thermoelectric properties was investigated. Thus, 4 at% Al-doped mesoporous ZnO demonstrated best enhanced thermoelectric properties.

Original language	English
Pages (from-to)	84-91
Number of pages	8
Journal	Solid State Sciences
Volume	82
DOIs	https://doi.org/10.1016/j.solidstatesciences.2018.05.010
Publication status	Published - 2018 Aug

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea grant funded by the Korea government (MSIP) (No. 2015R1A2A1A15054541 ). This work was supported by the Center for Advanced Meta-Materials (CAMM) funded by the Ministry of Science, ICT and Future Planning as Global Frontier Project (CAMM-No. NRF-2014M3A6B3063716 ). Experiments at PLS were supported in part by MEST and POSTECH . This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20163030013980 ).

Publisher Copyright:
© 2018 Elsevier Masson SAS

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1016/j.solidstatesciences.2018.05.010

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title = "Study of the effect of stress/strain of mesoporous Al-doped ZnO thin films on thermoelectric properties",

abstract = "In this study, effects of induced stress and strain on the thermoelectric properties of mesoporous ZnO thin films with various Al doping concentrations were investigated. With Al doping in ZnO structure, the hexagonal wurtzite structure of ZnO was distorted owing to an ionic size difference between Al and Zn. With an increase in Al concentration to 4 at%, thermal conductivity unexpectedly decreased from 1.70 to 1.24 W/mK owing to an increase in the tensile strain, and electrical conductivity increased from 4 S/cm to 15 S/cm owing to an increase in the carrier concentration. Based on this study, the relationship between the induced strain owing to lattice distortion and thermoelectric properties was investigated. Thus, 4 at% Al-doped mesoporous ZnO demonstrated best enhanced thermoelectric properties.",

author = "Hong, {Min Hee} and Haryeong Choi and Shim, {Dong Il} and Cho, {Hyung Hee} and Jiwan Kim and Park, {Hyung Ho}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea grant funded by the Korea government (MSIP) (No. 2015R1A2A1A15054541 ). This work was supported by the Center for Advanced Meta-Materials (CAMM) funded by the Ministry of Science, ICT and Future Planning as Global Frontier Project (CAMM-No. NRF-2014M3A6B3063716 ). Experiments at PLS were supported in part by MEST and POSTECH . This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20163030013980 ). Publisher Copyright: {\textcopyright} 2018 Elsevier Masson SAS",

year = "2018",

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doi = "10.1016/j.solidstatesciences.2018.05.010",

language = "English",

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T1 - Study of the effect of stress/strain of mesoporous Al-doped ZnO thin films on thermoelectric properties

AU - Hong, Min Hee

AU - Choi, Haryeong

AU - Shim, Dong Il

AU - Cho, Hyung Hee

AU - Kim, Jiwan

AU - Park, Hyung Ho

N1 - Funding Information: This work was supported by the National Research Foundation of Korea grant funded by the Korea government (MSIP) (No. 2015R1A2A1A15054541 ). This work was supported by the Center for Advanced Meta-Materials (CAMM) funded by the Ministry of Science, ICT and Future Planning as Global Frontier Project (CAMM-No. NRF-2014M3A6B3063716 ). Experiments at PLS were supported in part by MEST and POSTECH . This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20163030013980 ). Publisher Copyright: © 2018 Elsevier Masson SAS

PY - 2018/8

Y1 - 2018/8

N2 - In this study, effects of induced stress and strain on the thermoelectric properties of mesoporous ZnO thin films with various Al doping concentrations were investigated. With Al doping in ZnO structure, the hexagonal wurtzite structure of ZnO was distorted owing to an ionic size difference between Al and Zn. With an increase in Al concentration to 4 at%, thermal conductivity unexpectedly decreased from 1.70 to 1.24 W/mK owing to an increase in the tensile strain, and electrical conductivity increased from 4 S/cm to 15 S/cm owing to an increase in the carrier concentration. Based on this study, the relationship between the induced strain owing to lattice distortion and thermoelectric properties was investigated. Thus, 4 at% Al-doped mesoporous ZnO demonstrated best enhanced thermoelectric properties.

AB - In this study, effects of induced stress and strain on the thermoelectric properties of mesoporous ZnO thin films with various Al doping concentrations were investigated. With Al doping in ZnO structure, the hexagonal wurtzite structure of ZnO was distorted owing to an ionic size difference between Al and Zn. With an increase in Al concentration to 4 at%, thermal conductivity unexpectedly decreased from 1.70 to 1.24 W/mK owing to an increase in the tensile strain, and electrical conductivity increased from 4 S/cm to 15 S/cm owing to an increase in the carrier concentration. Based on this study, the relationship between the induced strain owing to lattice distortion and thermoelectric properties was investigated. Thus, 4 at% Al-doped mesoporous ZnO demonstrated best enhanced thermoelectric properties.

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JF - Solid State Sciences

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Study of the effect of stress/strain of mesoporous Al-doped ZnO thin films on thermoelectric properties

Abstract

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