Abstract
In this study, effects of induced stress and strain on the thermoelectric properties of mesoporous ZnO thin films with various Al doping concentrations were investigated. With Al doping in ZnO structure, the hexagonal wurtzite structure of ZnO was distorted owing to an ionic size difference between Al and Zn. With an increase in Al concentration to 4 at%, thermal conductivity unexpectedly decreased from 1.70 to 1.24 W/mK owing to an increase in the tensile strain, and electrical conductivity increased from 4 S/cm to 15 S/cm owing to an increase in the carrier concentration. Based on this study, the relationship between the induced strain owing to lattice distortion and thermoelectric properties was investigated. Thus, 4 at% Al-doped mesoporous ZnO demonstrated best enhanced thermoelectric properties.
| Original language | English |
|---|---|
| Pages (from-to) | 84-91 |
| Number of pages | 8 |
| Journal | Solid State Sciences |
| Volume | 82 |
| DOIs | |
| Publication status | Published - 2018 Aug |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea grant funded by the Korea government (MSIP) (No. 2015R1A2A1A15054541 ). This work was supported by the Center for Advanced Meta-Materials (CAMM) funded by the Ministry of Science, ICT and Future Planning as Global Frontier Project (CAMM-No. NRF-2014M3A6B3063716 ). Experiments at PLS were supported in part by MEST and POSTECH . This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20163030013980 ).
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics