Study of the optimum conditions of whisker growth by the novel ICVI process

J. H. Son, Y. J. Lee, D. J. Choi

Research output: Contribution to journalArticle

Abstract

The optimum conditions of whisker growth by the novel isothermal chemical vapor infiltration (ICVI) process were studied. The scanning electron microscopy (SEM) images of the whiskers-grown SiC fibers deposited at the boundary condition were also discussed. It was found that the whisker growth and the matrix filling process occurred during the whisker growth process under very specific conditions.

Original languageEnglish
Pages (from-to)1161-1163
Number of pages3
JournalJournal of Materials Science Letters
Volume22
Issue number16
DOIs
Publication statusPublished - 2003 Aug 15

Fingerprint

Chemical vapor infiltration
Crystal whiskers
Boundary conditions
Scanning electron microscopy
Fibers

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

@article{b03e26c74265481183f7fdbe0e2c8049,
title = "Study of the optimum conditions of whisker growth by the novel ICVI process",
abstract = "The optimum conditions of whisker growth by the novel isothermal chemical vapor infiltration (ICVI) process were studied. The scanning electron microscopy (SEM) images of the whiskers-grown SiC fibers deposited at the boundary condition were also discussed. It was found that the whisker growth and the matrix filling process occurred during the whisker growth process under very specific conditions.",
author = "Son, {J. H.} and Lee, {Y. J.} and Choi, {D. J.}",
year = "2003",
month = "8",
day = "15",
doi = "10.1023/A:1025135313312",
language = "English",
volume = "22",
pages = "1161--1163",
journal = "Journal of Materials Science Letters",
issn = "0261-8028",
publisher = "Chapman & Hall",
number = "16",

}

Study of the optimum conditions of whisker growth by the novel ICVI process. / Son, J. H.; Lee, Y. J.; Choi, D. J.

In: Journal of Materials Science Letters, Vol. 22, No. 16, 15.08.2003, p. 1161-1163.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Study of the optimum conditions of whisker growth by the novel ICVI process

AU - Son, J. H.

AU - Lee, Y. J.

AU - Choi, D. J.

PY - 2003/8/15

Y1 - 2003/8/15

N2 - The optimum conditions of whisker growth by the novel isothermal chemical vapor infiltration (ICVI) process were studied. The scanning electron microscopy (SEM) images of the whiskers-grown SiC fibers deposited at the boundary condition were also discussed. It was found that the whisker growth and the matrix filling process occurred during the whisker growth process under very specific conditions.

AB - The optimum conditions of whisker growth by the novel isothermal chemical vapor infiltration (ICVI) process were studied. The scanning electron microscopy (SEM) images of the whiskers-grown SiC fibers deposited at the boundary condition were also discussed. It was found that the whisker growth and the matrix filling process occurred during the whisker growth process under very specific conditions.

UR - http://www.scopus.com/inward/record.url?scp=0141569944&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141569944&partnerID=8YFLogxK

U2 - 10.1023/A:1025135313312

DO - 10.1023/A:1025135313312

M3 - Article

AN - SCOPUS:0141569944

VL - 22

SP - 1161

EP - 1163

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

SN - 0261-8028

IS - 16

ER -