The optimum conditions of whisker growth by the novel isothermal chemical vapor infiltration (ICVI) process were studied. The scanning electron microscopy (SEM) images of the whiskers-grown SiC fibers deposited at the boundary condition were also discussed. It was found that the whisker growth and the matrix filling process occurred during the whisker growth process under very specific conditions.
|Number of pages||3|
|Journal||Journal of Materials Science Letters|
|Publication status||Published - 2003 Aug 15|
All Science Journal Classification (ASJC) codes
- Materials Science(all)