Study on compensation of thermal stresses in the fabrication process of thin-film transistor

Jin Woo Han, Jeong Min Han, Byoung Yong Kim, Young Hwan Kim, Jong Hwan Kim, Dae Shik Seo, Yong Pil Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

It is essential to align masks without tolerance in every deposition step when fabricating thin-film transistors (TFTs) on a polymer substrate. However, the shrinkage of the polymer substrate due to thermal effect may arise during the deposition process. We observed the variation of shrinkage as a function of the annealing temperature. It was found that the substrates keep shrinking up to a critical temperature and stay the same above that point. The thermal treatment was conducted on substrates polycarbonate (PC), the polyarylate (PAR), and poly(ether sulfone) (PES). After predeposition annealing, the shrinkage was prevented but deformation was observed on the surface. An inorganic thin film with a different thermal expansion coefficient was employed to remove the deformation and this resulted in the elimination of strain.

Original languageEnglish
Pages (from-to)2238-2240
Number of pages3
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 1
DOIs
Publication statusPublished - 2008 Apr 18

Fingerprint

Thin film transistors
thermal stresses
Thermal stress
transistors
shrinkage
Fabrication
fabrication
Substrates
thin films
Annealing
annealing
sulfones
polymers
polycarbonates
Polymers
Polycarbonates
guy wires
Thermal effects
Thermal expansion
temperature effects

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Han, Jin Woo ; Han, Jeong Min ; Kim, Byoung Yong ; Kim, Young Hwan ; Kim, Jong Hwan ; Seo, Dae Shik ; Park, Yong Pil. / Study on compensation of thermal stresses in the fabrication process of thin-film transistor. In: Japanese journal of applied physics. 2008 ; Vol. 47, No. 4 PART 1. pp. 2238-2240.
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Study on compensation of thermal stresses in the fabrication process of thin-film transistor. / Han, Jin Woo; Han, Jeong Min; Kim, Byoung Yong; Kim, Young Hwan; Kim, Jong Hwan; Seo, Dae Shik; Park, Yong Pil.

In: Japanese journal of applied physics, Vol. 47, No. 4 PART 1, 18.04.2008, p. 2238-2240.

Research output: Contribution to journalArticle

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AB - It is essential to align masks without tolerance in every deposition step when fabricating thin-film transistors (TFTs) on a polymer substrate. However, the shrinkage of the polymer substrate due to thermal effect may arise during the deposition process. We observed the variation of shrinkage as a function of the annealing temperature. It was found that the substrates keep shrinking up to a critical temperature and stay the same above that point. The thermal treatment was conducted on substrates polycarbonate (PC), the polyarylate (PAR), and poly(ether sulfone) (PES). After predeposition annealing, the shrinkage was prevented but deformation was observed on the surface. An inorganic thin film with a different thermal expansion coefficient was employed to remove the deformation and this resulted in the elimination of strain.

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