Abstract
It is essential to align masks without tolerance in every deposition step when fabricating thin-film transistors (TFTs) on a polymer substrate. However, the shrinkage of the polymer substrate due to thermal effect may arise during the deposition process. We observed the variation of shrinkage as a function of the annealing temperature. It was found that the substrates keep shrinking up to a critical temperature and stay the same above that point. The thermal treatment was conducted on substrates polycarbonate (PC), the polyarylate (PAR), and poly(ether sulfone) (PES). After predeposition annealing, the shrinkage was prevented but deformation was observed on the surface. An inorganic thin film with a different thermal expansion coefficient was employed to remove the deformation and this resulted in the elimination of strain.
| Original language | English |
|---|---|
| Pages (from-to) | 2238-2240 |
| Number of pages | 3 |
| Journal | Japanese journal of applied physics |
| Volume | 47 |
| Issue number | 4 PART 1 |
| DOIs | |
| Publication status | Published - 2008 Apr 18 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Study on compensation of thermal stresses in the fabrication process of thin-film transistor. / Han, Jin Woo; Han, Jeong Min; Kim, Byoung Yong; Kim, Young Hwan; Kim, Jong Hwan; Seo, Dae Shik; Park, Yong Pil.
In: Japanese journal of applied physics, Vol. 47, No. 4 PART 1, 18.04.2008, p. 2238-2240.Research output: Contribution to journal › Article
TY - JOUR
T1 - Study on compensation of thermal stresses in the fabrication process of thin-film transistor
AU - Han, Jin Woo
AU - Han, Jeong Min
AU - Kim, Byoung Yong
AU - Kim, Young Hwan
AU - Kim, Jong Hwan
AU - Seo, Dae Shik
AU - Park, Yong Pil
PY - 2008/4/18
Y1 - 2008/4/18
N2 - It is essential to align masks without tolerance in every deposition step when fabricating thin-film transistors (TFTs) on a polymer substrate. However, the shrinkage of the polymer substrate due to thermal effect may arise during the deposition process. We observed the variation of shrinkage as a function of the annealing temperature. It was found that the substrates keep shrinking up to a critical temperature and stay the same above that point. The thermal treatment was conducted on substrates polycarbonate (PC), the polyarylate (PAR), and poly(ether sulfone) (PES). After predeposition annealing, the shrinkage was prevented but deformation was observed on the surface. An inorganic thin film with a different thermal expansion coefficient was employed to remove the deformation and this resulted in the elimination of strain.
AB - It is essential to align masks without tolerance in every deposition step when fabricating thin-film transistors (TFTs) on a polymer substrate. However, the shrinkage of the polymer substrate due to thermal effect may arise during the deposition process. We observed the variation of shrinkage as a function of the annealing temperature. It was found that the substrates keep shrinking up to a critical temperature and stay the same above that point. The thermal treatment was conducted on substrates polycarbonate (PC), the polyarylate (PAR), and poly(ether sulfone) (PES). After predeposition annealing, the shrinkage was prevented but deformation was observed on the surface. An inorganic thin film with a different thermal expansion coefficient was employed to remove the deformation and this resulted in the elimination of strain.
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U2 - 10.1143/JJAP.47.2238
DO - 10.1143/JJAP.47.2238
M3 - Article
AN - SCOPUS:54249132578
VL - 47
SP - 2238
EP - 2240
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 4 PART 1
ER -