Study on compensation of thermal stresses in the fabrication process of thin-film transistor

Jin Woo Han; Jeong Min Han; Byoung Yong Kim; Young Hwan Kim; Jong Hwan Kim; Dae Shik Seo; Yong Pil Park

doi:10.1143/JJAP.47.2238

Study on compensation of thermal stresses in the fabrication process of thin-film transistor

Jin Woo Han, Jeong Min Han, Byoung Yong Kim, Young Hwan Kim, Jong Hwan Kim, Dae Shik Seo, Yong Pil Park

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

It is essential to align masks without tolerance in every deposition step when fabricating thin-film transistors (TFTs) on a polymer substrate. However, the shrinkage of the polymer substrate due to thermal effect may arise during the deposition process. We observed the variation of shrinkage as a function of the annealing temperature. It was found that the substrates keep shrinking up to a critical temperature and stay the same above that point. The thermal treatment was conducted on substrates polycarbonate (PC), the polyarylate (PAR), and poly(ether sulfone) (PES). After predeposition annealing, the shrinkage was prevented but deformation was observed on the surface. An inorganic thin film with a different thermal expansion coefficient was employed to remove the deformation and this resulted in the elimination of strain.

Original language	English
Pages (from-to)	2238-2240
Number of pages	3
Journal	Japanese journal of applied physics
Volume	47
Issue number	4 PART 1
DOIs	https://doi.org/10.1143/JJAP.47.2238
Publication status	Published - 2008 Apr 18

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Study on compensation of thermal stresses in the fabrication process of thin-film transistor",

abstract = "It is essential to align masks without tolerance in every deposition step when fabricating thin-film transistors (TFTs) on a polymer substrate. However, the shrinkage of the polymer substrate due to thermal effect may arise during the deposition process. We observed the variation of shrinkage as a function of the annealing temperature. It was found that the substrates keep shrinking up to a critical temperature and stay the same above that point. The thermal treatment was conducted on substrates polycarbonate (PC), the polyarylate (PAR), and poly(ether sulfone) (PES). After predeposition annealing, the shrinkage was prevented but deformation was observed on the surface. An inorganic thin film with a different thermal expansion coefficient was employed to remove the deformation and this resulted in the elimination of strain.",

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AU - Han, Jin Woo

AU - Han, Jeong Min

AU - Kim, Byoung Yong

AU - Kim, Young Hwan

AU - Kim, Jong Hwan

AU - Seo, Dae Shik

AU - Park, Yong Pil

PY - 2008/4/18

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AB - It is essential to align masks without tolerance in every deposition step when fabricating thin-film transistors (TFTs) on a polymer substrate. However, the shrinkage of the polymer substrate due to thermal effect may arise during the deposition process. We observed the variation of shrinkage as a function of the annealing temperature. It was found that the substrates keep shrinking up to a critical temperature and stay the same above that point. The thermal treatment was conducted on substrates polycarbonate (PC), the polyarylate (PAR), and poly(ether sulfone) (PES). After predeposition annealing, the shrinkage was prevented but deformation was observed on the surface. An inorganic thin film with a different thermal expansion coefficient was employed to remove the deformation and this resulted in the elimination of strain.

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