ZnO-based thin-film transistors (TFTs) have been fabricated and the mechanical characteristics of electric circuits, such as stress, strain, and deformation are analyzed by the finite element method (FEM). In this study, a mechanical-stability design guide for such systems is proposed; this design takes into account the stress and deformation of the bridge to estimate the stress distribution in an SiO2 film with O to 5% stretched on 0.5-μm-thick. The predicted buckle amplitude of SiO2 bridges agrees well with experimental results within 0.5% error. The stress and strain at the contact point between bridges and a pad were measured in a previous structural analysis. These structural analysis suggest that the numerical measurement of deformation, SU-8 coating thickness for Neutral Mechanical Plane (NMP) and ITO electrode size on a dielectric layer was useful in enhancing the structural and electrical stabilities.
|Number of pages||6|
|Journal||Transactions of the Korean Society of Mechanical Engineers, B|
|Publication status||Published - 2011 Jan 1|
All Science Journal Classification (ASJC) codes
- Mechanical Engineering