Study on modified silicon surface after CHF 3 /C 2 F 6 reactive ion etching

Hyung-Ho Park, Kwang Ho Kwon, Sang Hwan Lee, Byung Hwa Koak, Sahn Nahm, Hee Tae Lee, Kyoung Ik Cho, Oh Joon Kwon, Young II Kang

Research output: Contribution to journalArticle

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Abstract

The effects of reactive ion etching (RIE) of SiO 2 layer in CHF 3 / C 2 F 6 on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE: (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, O 2 , NF 3 , SF 6 , and Cl 2 plasma treatments. XPS analysis revealed that NF 3 treatment is most effective. With 10 seconds exposure to NF 3 plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.

Original languageEnglish
Pages (from-to)45-57
Number of pages13
JournalETRI Journal
Volume16
Issue number1
DOIs
Publication statusPublished - 1994 Jan 1

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Fluorine
Reactive ion etching
Silicon
Carbon
X ray photoelectron spectroscopy
Plasmas
Fluorocarbons
Chemical bonds
Rutherford backscattering spectroscopy
Mass spectrometers
High resolution transmission electron microscopy
Surface structure
Hydrogen
Cleaning
Ions
Oxygen
Crystalline materials
Atoms
Defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Electrical and Electronic Engineering

Cite this

Park, H-H., Kwon, K. H., Lee, S. H., Koak, B. H., Nahm, S., Lee, H. T., ... Kang, Y. II. (1994). Study on modified silicon surface after CHF 3 /C 2 F 6 reactive ion etching ETRI Journal, 16(1), 45-57. https://doi.org/10.4218/etrij.94.0194.0014
Park, Hyung-Ho ; Kwon, Kwang Ho ; Lee, Sang Hwan ; Koak, Byung Hwa ; Nahm, Sahn ; Lee, Hee Tae ; Cho, Kyoung Ik ; Kwon, Oh Joon ; Kang, Young II. / Study on modified silicon surface after CHF 3 /C 2 F 6 reactive ion etching In: ETRI Journal. 1994 ; Vol. 16, No. 1. pp. 45-57.
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abstract = "The effects of reactive ion etching (RIE) of SiO 2 layer in CHF 3 / C 2 F 6 on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE: (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, O 2 , NF 3 , SF 6 , and Cl 2 plasma treatments. XPS analysis revealed that NF 3 treatment is most effective. With 10 seconds exposure to NF 3 plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.",
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Park, H-H, Kwon, KH, Lee, SH, Koak, BH, Nahm, S, Lee, HT, Cho, KI, Kwon, OJ & Kang, YII 1994, ' Study on modified silicon surface after CHF 3 /C 2 F 6 reactive ion etching ', ETRI Journal, vol. 16, no. 1, pp. 45-57. https://doi.org/10.4218/etrij.94.0194.0014

Study on modified silicon surface after CHF 3 /C 2 F 6 reactive ion etching . / Park, Hyung-Ho; Kwon, Kwang Ho; Lee, Sang Hwan; Koak, Byung Hwa; Nahm, Sahn; Lee, Hee Tae; Cho, Kyoung Ik; Kwon, Oh Joon; Kang, Young II.

In: ETRI Journal, Vol. 16, No. 1, 01.01.1994, p. 45-57.

Research output: Contribution to journalArticle

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AU - Park, Hyung-Ho

AU - Kwon, Kwang Ho

AU - Lee, Sang Hwan

AU - Koak, Byung Hwa

AU - Nahm, Sahn

AU - Lee, Hee Tae

AU - Cho, Kyoung Ik

AU - Kwon, Oh Joon

AU - Kang, Young II

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Y1 - 1994/1/1

N2 - The effects of reactive ion etching (RIE) of SiO 2 layer in CHF 3 / C 2 F 6 on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE: (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, O 2 , NF 3 , SF 6 , and Cl 2 plasma treatments. XPS analysis revealed that NF 3 treatment is most effective. With 10 seconds exposure to NF 3 plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.

AB - The effects of reactive ion etching (RIE) of SiO 2 layer in CHF 3 / C 2 F 6 on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE: (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, O 2 , NF 3 , SF 6 , and Cl 2 plasma treatments. XPS analysis revealed that NF 3 treatment is most effective. With 10 seconds exposure to NF 3 plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.

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