Abstract
The effects of reactive ion etching (RIE) of SiO 2 layer in CHF 3 / C 2 F 6 on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE: (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, O 2 , NF 3 , SF 6 , and Cl 2 plasma treatments. XPS analysis revealed that NF 3 treatment is most effective. With 10 seconds exposure to NF 3 plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.
| Original language | English |
|---|---|
| Pages (from-to) | 45-57 |
| Number of pages | 13 |
| Journal | ETRI Journal |
| Volume | 16 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1994 Jan 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Computer Science(all)
- Electrical and Electronic Engineering
Cite this
}
Study on modified silicon surface after CHF 3 /C 2 F 6 reactive ion etching . / Park, Hyung-Ho; Kwon, Kwang Ho; Lee, Sang Hwan; Koak, Byung Hwa; Nahm, Sahn; Lee, Hee Tae; Cho, Kyoung Ik; Kwon, Oh Joon; Kang, Young II.
In: ETRI Journal, Vol. 16, No. 1, 01.01.1994, p. 45-57.Research output: Contribution to journal › Article
TY - JOUR
T1 - Study on modified silicon surface after CHF 3 /C 2 F 6 reactive ion etching
AU - Park, Hyung-Ho
AU - Kwon, Kwang Ho
AU - Lee, Sang Hwan
AU - Koak, Byung Hwa
AU - Nahm, Sahn
AU - Lee, Hee Tae
AU - Cho, Kyoung Ik
AU - Kwon, Oh Joon
AU - Kang, Young II
PY - 1994/1/1
Y1 - 1994/1/1
N2 - The effects of reactive ion etching (RIE) of SiO 2 layer in CHF 3 / C 2 F 6 on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE: (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, O 2 , NF 3 , SF 6 , and Cl 2 plasma treatments. XPS analysis revealed that NF 3 treatment is most effective. With 10 seconds exposure to NF 3 plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.
AB - The effects of reactive ion etching (RIE) of SiO 2 layer in CHF 3 / C 2 F 6 on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE: (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, O 2 , NF 3 , SF 6 , and Cl 2 plasma treatments. XPS analysis revealed that NF 3 treatment is most effective. With 10 seconds exposure to NF 3 plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.
UR - http://www.scopus.com/inward/record.url?scp=0028420791&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0028420791&partnerID=8YFLogxK
U2 - 10.4218/etrij.94.0194.0014
DO - 10.4218/etrij.94.0194.0014
M3 - Article
AN - SCOPUS:0028420791
VL - 16
SP - 45
EP - 57
JO - ETRI Journal
JF - ETRI Journal
SN - 1225-6463
IS - 1
ER -