TY - JOUR
T1 - Study on modified silicon surface after CHF3/C2F6 reactive ion etching
AU - Park, Hyung Ho
AU - Kwon, Kwang Ho
AU - Lee, Sang Hwan
AU - Koak, Byung Hwa
AU - Nahm, Sahn
AU - Lee, Hee Tae
AU - Cho, Kyoung Ik
AU - Kwon, Oh Joon
AU - Kang, Young II
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1994
Y1 - 1994
N2 - The effects of reactive ion etching (RIE) of SiO2 layer in CHF3 / C2F6 on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE: (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, O2, NF3, SF6, and Cl2 plasma treatments. XPS analysis revealed that NF3 treatment is most effective. With 10 seconds exposure to NF3 plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.
AB - The effects of reactive ion etching (RIE) of SiO2 layer in CHF3 / C2F6 on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE: (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, O2, NF3, SF6, and Cl2 plasma treatments. XPS analysis revealed that NF3 treatment is most effective. With 10 seconds exposure to NF3 plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.
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U2 - 10.4218/etrij.94.0194.0014
DO - 10.4218/etrij.94.0194.0014
M3 - Article
AN - SCOPUS:0028420791
VL - 16
SP - 45
EP - 57
JO - ETRI Journal
JF - ETRI Journal
SN - 1225-6463
IS - 1
ER -