Study on nitrogen doped Ge 2 Sb 2 Te 5 films for phase change memory

Min Jung Shin, Suk Min Kim, Doo Jin Choi, Kye Nam Lee, Suk Kyoung Hong, Young Jin Park

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Nitrogen doped Ge 2 Sb 2 Te 5 films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. The films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. It was found that the structure of the nitrogen doped films differed from un-doped ones where the XRD peaks of the former were broader and of lower peak height. The roughness of the nitrogen-doped films increased and crystal grains appeared on the film surface at 200, as the annealing temperature increased. The sheet resistance of the films annealed at 280 and 380 increased approximately 10 4 -10 5 times than that of un-doped crystallized films.

Original languageEnglish
Pages (from-to)1543-1545
Number of pages3
JournalJournal of Materials Science
Volume40
Issue number6
DOIs
Publication statusPublished - 2005 Mar 1

Fingerprint

Phase change memory
Nitrogen
Sheet resistance
Temperature
Surface roughness
Annealing

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Shin, Min Jung ; Kim, Suk Min ; Choi, Doo Jin ; Lee, Kye Nam ; Hong, Suk Kyoung ; Park, Young Jin. / Study on nitrogen doped Ge 2 Sb 2 Te 5 films for phase change memory In: Journal of Materials Science. 2005 ; Vol. 40, No. 6. pp. 1543-1545.
@article{02ab7ca38d1340aab7cd505f8d3648c9,
title = "Study on nitrogen doped Ge 2 Sb 2 Te 5 films for phase change memory",
abstract = "Nitrogen doped Ge 2 Sb 2 Te 5 films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. The films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. It was found that the structure of the nitrogen doped films differed from un-doped ones where the XRD peaks of the former were broader and of lower peak height. The roughness of the nitrogen-doped films increased and crystal grains appeared on the film surface at 200, as the annealing temperature increased. The sheet resistance of the films annealed at 280 and 380 increased approximately 10 4 -10 5 times than that of un-doped crystallized films.",
author = "Shin, {Min Jung} and Kim, {Suk Min} and Choi, {Doo Jin} and Lee, {Kye Nam} and Hong, {Suk Kyoung} and Park, {Young Jin}",
year = "2005",
month = "3",
day = "1",
doi = "10.1007/s10853-005-0600-4",
language = "English",
volume = "40",
pages = "1543--1545",
journal = "Journal of Materials Science",
issn = "0022-2461",
publisher = "Springer Netherlands",
number = "6",

}

Study on nitrogen doped Ge 2 Sb 2 Te 5 films for phase change memory . / Shin, Min Jung; Kim, Suk Min; Choi, Doo Jin; Lee, Kye Nam; Hong, Suk Kyoung; Park, Young Jin.

In: Journal of Materials Science, Vol. 40, No. 6, 01.03.2005, p. 1543-1545.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Study on nitrogen doped Ge 2 Sb 2 Te 5 films for phase change memory

AU - Shin, Min Jung

AU - Kim, Suk Min

AU - Choi, Doo Jin

AU - Lee, Kye Nam

AU - Hong, Suk Kyoung

AU - Park, Young Jin

PY - 2005/3/1

Y1 - 2005/3/1

N2 - Nitrogen doped Ge 2 Sb 2 Te 5 films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. The films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. It was found that the structure of the nitrogen doped films differed from un-doped ones where the XRD peaks of the former were broader and of lower peak height. The roughness of the nitrogen-doped films increased and crystal grains appeared on the film surface at 200, as the annealing temperature increased. The sheet resistance of the films annealed at 280 and 380 increased approximately 10 4 -10 5 times than that of un-doped crystallized films.

AB - Nitrogen doped Ge 2 Sb 2 Te 5 films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. The films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. It was found that the structure of the nitrogen doped films differed from un-doped ones where the XRD peaks of the former were broader and of lower peak height. The roughness of the nitrogen-doped films increased and crystal grains appeared on the film surface at 200, as the annealing temperature increased. The sheet resistance of the films annealed at 280 and 380 increased approximately 10 4 -10 5 times than that of un-doped crystallized films.

UR - http://www.scopus.com/inward/record.url?scp=27544507774&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27544507774&partnerID=8YFLogxK

U2 - 10.1007/s10853-005-0600-4

DO - 10.1007/s10853-005-0600-4

M3 - Article

VL - 40

SP - 1543

EP - 1545

JO - Journal of Materials Science

JF - Journal of Materials Science

SN - 0022-2461

IS - 6

ER -