Study on nitrogen doped Ge 2Sb 2Te 5 films for phase change memory

Min Jung Shin, Suk Min Kim, Doo Jin Choi, Kye Nam Lee, Suk Kyoung Hong, Young Jin Park

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Nitrogen doped Ge 2Sb 2Te 5 films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. The films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. It was found that the structure of the nitrogen doped films differed from un-doped ones where the XRD peaks of the former were broader and of lower peak height. The roughness of the nitrogen-doped films increased and crystal grains appeared on the film surface at 200, as the annealing temperature increased. The sheet resistance of the films annealed at 280 and 380 increased approximately 10 4-10 5 times than that of un-doped crystallized films.

Original languageEnglish
Pages (from-to)1543-1545
Number of pages3
JournalJournal of Materials Science
Volume40
Issue number6
DOIs
Publication statusPublished - 2005 Mar 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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