Study on nitrogen doped Ge ₂Sb ₂Te ₅ films for phase change memory

Nitrogen doped Ge ₂Sb ₂Te ₅ films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. The films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. It was found that the structure of the nitrogen doped films differed from un-doped ones where the XRD peaks of the former were broader and of lower peak height. The roughness of the nitrogen-doped films increased and crystal grains appeared on the film surface at 200, as the annealing temperature increased. The sheet resistance of the films annealed at 280 and 380 increased approximately 10 ⁴-10 ⁵ times than that of un-doped crystallized films.