Abstract
Nitrogen doped Ge 2 Sb 2 Te 5 films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. The films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. It was found that the structure of the nitrogen doped films differed from un-doped ones where the XRD peaks of the former were broader and of lower peak height. The roughness of the nitrogen-doped films increased and crystal grains appeared on the film surface at 200, as the annealing temperature increased. The sheet resistance of the films annealed at 280 and 380 increased approximately 10 4 -10 5 times than that of un-doped crystallized films.
| Original language | English |
|---|---|
| Pages (from-to) | 1543-1545 |
| Number of pages | 3 |
| Journal | Journal of Materials Science |
| Volume | 40 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2005 Mar 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
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Study on nitrogen doped Ge 2 Sb 2 Te 5 films for phase change memory . / Shin, Min Jung; Kim, Suk Min; Choi, Doo Jin; Lee, Kye Nam; Hong, Suk Kyoung; Park, Young Jin.
In: Journal of Materials Science, Vol. 40, No. 6, 01.03.2005, p. 1543-1545.Research output: Contribution to journal › Article
TY - JOUR
T1 - Study on nitrogen doped Ge 2 Sb 2 Te 5 films for phase change memory
AU - Shin, Min Jung
AU - Kim, Suk Min
AU - Choi, Doo Jin
AU - Lee, Kye Nam
AU - Hong, Suk Kyoung
AU - Park, Young Jin
PY - 2005/3/1
Y1 - 2005/3/1
N2 - Nitrogen doped Ge 2 Sb 2 Te 5 films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. The films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. It was found that the structure of the nitrogen doped films differed from un-doped ones where the XRD peaks of the former were broader and of lower peak height. The roughness of the nitrogen-doped films increased and crystal grains appeared on the film surface at 200, as the annealing temperature increased. The sheet resistance of the films annealed at 280 and 380 increased approximately 10 4 -10 5 times than that of un-doped crystallized films.
AB - Nitrogen doped Ge 2 Sb 2 Te 5 films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. The films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. It was found that the structure of the nitrogen doped films differed from un-doped ones where the XRD peaks of the former were broader and of lower peak height. The roughness of the nitrogen-doped films increased and crystal grains appeared on the film surface at 200, as the annealing temperature increased. The sheet resistance of the films annealed at 280 and 380 increased approximately 10 4 -10 5 times than that of un-doped crystallized films.
UR - http://www.scopus.com/inward/record.url?scp=27544507774&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=27544507774&partnerID=8YFLogxK
U2 - 10.1007/s10853-005-0600-4
DO - 10.1007/s10853-005-0600-4
M3 - Article
AN - SCOPUS:27544507774
VL - 40
SP - 1543
EP - 1545
JO - Journal of Materials Science
JF - Journal of Materials Science
SN - 0022-2461
IS - 6
ER -