Abstract
Nitrogen doped Ge 2Sb 2Te 5 films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. The films were annealed at higher temperatures than 200 to investigate the characteristics of crystallized films. It was found that the structure of the nitrogen doped films differed from un-doped ones where the XRD peaks of the former were broader and of lower peak height. The roughness of the nitrogen-doped films increased and crystal grains appeared on the film surface at 200, as the annealing temperature increased. The sheet resistance of the films annealed at 280 and 380 increased approximately 10 4-10 5 times than that of un-doped crystallized films.
| Original language | English |
|---|---|
| Pages (from-to) | 1543-1545 |
| Number of pages | 3 |
| Journal | Journal of Materials Science |
| Volume | 40 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2005 Mar 1 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
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Shin, M. J., Kim, S. M., Choi, D. J., Lee, K. N., Hong, S. K., & Park, Y. J. (2005). Study on nitrogen doped Ge 2Sb 2Te 5 films for phase change memory. Journal of Materials Science, 40(6), 1543-1545. https://doi.org/10.1007/s10853-005-0600-4