Study on properties of Ga/F-co-doped ZnO thin films prepared using atomic layer deposition

Kyung Mun Kang, Yue Wang, Minjae Kim, Hyung Ho Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Zinc oxide (ZnO) thin films with co-doped Ga and F were deposited using atomic layer deposition. Structural, electrical, and optical properties of the ZnO thin films were analyzed for different F doping amounts under the condition that the Ga doping amount remained fixed. From the X-ray diffraction analysis results, it was confirmed that the preferred orientation changed from (002) to (100) with changing F amounts. The electrical properties, i.e., carrier concentration and mobility of these co-doped ZnO thin films improved with the F doping amount, resulting in a decrease in the electrical resistivity. The reason for this improved resistivity is that Ga and F atoms replace Zn and O in the lattice sites, respectively, despite a slight decrease in the mobility. An increase in the carrier concentration widened the optical bandgap of ZnO thin films by the Moss-Burstein effect.

Original languageEnglish
Pages (from-to)913-919
Number of pages7
JournalThin Solid Films
Volume660
DOIs
Publication statusPublished - 2018 Aug 30

Fingerprint

Zinc Oxide
Atomic layer deposition
atomic layer epitaxy
Zinc oxide
zinc oxides
Oxide films
Thin films
Doping (additives)
thin films
Carrier concentration
Electric properties
electrical properties
Bryophytes
electrical resistivity
Carrier mobility
Optical band gaps
X ray diffraction analysis
Structural properties
Optical properties
optical properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kang, Kyung Mun ; Wang, Yue ; Kim, Minjae ; Park, Hyung Ho. / Study on properties of Ga/F-co-doped ZnO thin films prepared using atomic layer deposition. In: Thin Solid Films. 2018 ; Vol. 660. pp. 913-919.
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Study on properties of Ga/F-co-doped ZnO thin films prepared using atomic layer deposition. / Kang, Kyung Mun; Wang, Yue; Kim, Minjae; Park, Hyung Ho.

In: Thin Solid Films, Vol. 660, 30.08.2018, p. 913-919.

Research output: Contribution to journalArticle

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N2 - Zinc oxide (ZnO) thin films with co-doped Ga and F were deposited using atomic layer deposition. Structural, electrical, and optical properties of the ZnO thin films were analyzed for different F doping amounts under the condition that the Ga doping amount remained fixed. From the X-ray diffraction analysis results, it was confirmed that the preferred orientation changed from (002) to (100) with changing F amounts. The electrical properties, i.e., carrier concentration and mobility of these co-doped ZnO thin films improved with the F doping amount, resulting in a decrease in the electrical resistivity. The reason for this improved resistivity is that Ga and F atoms replace Zn and O in the lattice sites, respectively, despite a slight decrease in the mobility. An increase in the carrier concentration widened the optical bandgap of ZnO thin films by the Moss-Burstein effect.

AB - Zinc oxide (ZnO) thin films with co-doped Ga and F were deposited using atomic layer deposition. Structural, electrical, and optical properties of the ZnO thin films were analyzed for different F doping amounts under the condition that the Ga doping amount remained fixed. From the X-ray diffraction analysis results, it was confirmed that the preferred orientation changed from (002) to (100) with changing F amounts. The electrical properties, i.e., carrier concentration and mobility of these co-doped ZnO thin films improved with the F doping amount, resulting in a decrease in the electrical resistivity. The reason for this improved resistivity is that Ga and F atoms replace Zn and O in the lattice sites, respectively, despite a slight decrease in the mobility. An increase in the carrier concentration widened the optical bandgap of ZnO thin films by the Moss-Burstein effect.

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