Study on ta diffusion barrier in Al/Si system

Jaehwa Kim, Dong Soo Yoon, Joon Seop Kwak, Hong Koo Baik, Sung Man Lee

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The property of Ta as a diffusion barrier is studied for Al/Ta/Si structure. Interfacial reactions of Al(180 nm)/Ta(130 nm)/Si and Al(180 nm)/Ta(24 nm)/Si, in the temperature range 450∼600°C for 30 min, have been investigated. In Al/ Ta(130 nm)/Si system, which is Ta-excess case, Al3Ta is formed at 500°C. At 575°C, TaSi2 is formed at the interface of Ta Si. At 600°C, after Al3Ta decomposes at the interface of Al3Ta TaSi2, free Ta is bonded to TaSi2 with the supply of Si from Si substrate and free Al diffuses through TaSi2, resulting in Al spiking. In Al/Ta(24 nm)/Si system, which is Al-excess case, Al3Ta is formed at 500°C. At the same temperature of 500°C, after Al3Ta decomposes at the interface of Al3Ta/Si, free Ta reacts with Si to form TaSi2 and free Al diffuses to Si substrate, resulting in Al spiking. The results of interfacial reactions can be understood from the calculated Al-Si-Ta ternary phase diagram. It can be concluded that the reaction at Al/Ta should be suppressed to improve the performance of Ta diffusion barrier in Al/Si system.

Original languageEnglish
Pages (from-to)6-12
Number of pages7
JournalJournal of Electronic Materials
Volume28
Issue number1
DOIs
Publication statusPublished - 1999 Jan 1

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Diffusion barriers
Surface chemistry
spiking
Substrates
Phase diagrams
Temperature
phase diagrams
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kim, Jaehwa ; Yoon, Dong Soo ; Kwak, Joon Seop ; Baik, Hong Koo ; Lee, Sung Man. / Study on ta diffusion barrier in Al/Si system. In: Journal of Electronic Materials. 1999 ; Vol. 28, No. 1. pp. 6-12.
@article{bd5899dfdf0b4872a467cbc63068b6b0,
title = "Study on ta diffusion barrier in Al/Si system",
abstract = "The property of Ta as a diffusion barrier is studied for Al/Ta/Si structure. Interfacial reactions of Al(180 nm)/Ta(130 nm)/Si and Al(180 nm)/Ta(24 nm)/Si, in the temperature range 450∼600°C for 30 min, have been investigated. In Al/ Ta(130 nm)/Si system, which is Ta-excess case, Al3Ta is formed at 500°C. At 575°C, TaSi2 is formed at the interface of Ta Si. At 600°C, after Al3Ta decomposes at the interface of Al3Ta TaSi2, free Ta is bonded to TaSi2 with the supply of Si from Si substrate and free Al diffuses through TaSi2, resulting in Al spiking. In Al/Ta(24 nm)/Si system, which is Al-excess case, Al3Ta is formed at 500°C. At the same temperature of 500°C, after Al3Ta decomposes at the interface of Al3Ta/Si, free Ta reacts with Si to form TaSi2 and free Al diffuses to Si substrate, resulting in Al spiking. The results of interfacial reactions can be understood from the calculated Al-Si-Ta ternary phase diagram. It can be concluded that the reaction at Al/Ta should be suppressed to improve the performance of Ta diffusion barrier in Al/Si system.",
author = "Jaehwa Kim and Yoon, {Dong Soo} and Kwak, {Joon Seop} and Baik, {Hong Koo} and Lee, {Sung Man}",
year = "1999",
month = "1",
day = "1",
doi = "10.1007/s11664-999-0187-7",
language = "English",
volume = "28",
pages = "6--12",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "1",

}

Study on ta diffusion barrier in Al/Si system. / Kim, Jaehwa; Yoon, Dong Soo; Kwak, Joon Seop; Baik, Hong Koo; Lee, Sung Man.

In: Journal of Electronic Materials, Vol. 28, No. 1, 01.01.1999, p. 6-12.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Study on ta diffusion barrier in Al/Si system

AU - Kim, Jaehwa

AU - Yoon, Dong Soo

AU - Kwak, Joon Seop

AU - Baik, Hong Koo

AU - Lee, Sung Man

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The property of Ta as a diffusion barrier is studied for Al/Ta/Si structure. Interfacial reactions of Al(180 nm)/Ta(130 nm)/Si and Al(180 nm)/Ta(24 nm)/Si, in the temperature range 450∼600°C for 30 min, have been investigated. In Al/ Ta(130 nm)/Si system, which is Ta-excess case, Al3Ta is formed at 500°C. At 575°C, TaSi2 is formed at the interface of Ta Si. At 600°C, after Al3Ta decomposes at the interface of Al3Ta TaSi2, free Ta is bonded to TaSi2 with the supply of Si from Si substrate and free Al diffuses through TaSi2, resulting in Al spiking. In Al/Ta(24 nm)/Si system, which is Al-excess case, Al3Ta is formed at 500°C. At the same temperature of 500°C, after Al3Ta decomposes at the interface of Al3Ta/Si, free Ta reacts with Si to form TaSi2 and free Al diffuses to Si substrate, resulting in Al spiking. The results of interfacial reactions can be understood from the calculated Al-Si-Ta ternary phase diagram. It can be concluded that the reaction at Al/Ta should be suppressed to improve the performance of Ta diffusion barrier in Al/Si system.

AB - The property of Ta as a diffusion barrier is studied for Al/Ta/Si structure. Interfacial reactions of Al(180 nm)/Ta(130 nm)/Si and Al(180 nm)/Ta(24 nm)/Si, in the temperature range 450∼600°C for 30 min, have been investigated. In Al/ Ta(130 nm)/Si system, which is Ta-excess case, Al3Ta is formed at 500°C. At 575°C, TaSi2 is formed at the interface of Ta Si. At 600°C, after Al3Ta decomposes at the interface of Al3Ta TaSi2, free Ta is bonded to TaSi2 with the supply of Si from Si substrate and free Al diffuses through TaSi2, resulting in Al spiking. In Al/Ta(24 nm)/Si system, which is Al-excess case, Al3Ta is formed at 500°C. At the same temperature of 500°C, after Al3Ta decomposes at the interface of Al3Ta/Si, free Ta reacts with Si to form TaSi2 and free Al diffuses to Si substrate, resulting in Al spiking. The results of interfacial reactions can be understood from the calculated Al-Si-Ta ternary phase diagram. It can be concluded that the reaction at Al/Ta should be suppressed to improve the performance of Ta diffusion barrier in Al/Si system.

UR - http://www.scopus.com/inward/record.url?scp=0032762021&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032762021&partnerID=8YFLogxK

U2 - 10.1007/s11664-999-0187-7

DO - 10.1007/s11664-999-0187-7

M3 - Article

VL - 28

SP - 6

EP - 12

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 1

ER -