Study on the effects of zr-incorporated inzno thin-film transistors using a solution process

Tae Jeong, Si Joon Kim, Doo Hyun Yoon, Woong Hee Jeong, Dong Lim Kim, Hyun Soo Lim, Hyun Jae Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The effects of adding Zr into solution-processed InZnO (IZO) thin-film transistors (TFTs) were investigated with varying Zr content. ZrInZnO (ZIZO) TFTs showed a lower off-current and a sharper subthreshold swing than IZO TFTs. The addition of Zr plays a role in reducing the oxygen vacancies, and thus effectively decreases the carrier concentrations of the ZIZO active layer. The characteristics of various DC bias stresses are provided and discussed to evaluate the reliability of ZIZO TFTs. After 1000 s of various DC bias stresses, although the threshold voltage may shift dramatically, variations in subthreshold swing are negligible.

Original languageEnglish
Article number070202
JournalJapanese Journal of Applied Physics
Volume50
Issue number7 PART 1
DOIs
Publication statusPublished - 2011 Jul 1

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Thin film transistors
transistors
thin films
direct current
Oxygen vacancies
Threshold voltage
threshold voltage
Carrier concentration
shift
oxygen

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Jeong, Tae ; Kim, Si Joon ; Yoon, Doo Hyun ; Jeong, Woong Hee ; Kim, Dong Lim ; Lim, Hyun Soo ; Kim, Hyun Jae. / Study on the effects of zr-incorporated inzno thin-film transistors using a solution process. In: Japanese Journal of Applied Physics. 2011 ; Vol. 50, No. 7 PART 1.
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Study on the effects of zr-incorporated inzno thin-film transistors using a solution process. / Jeong, Tae; Kim, Si Joon; Yoon, Doo Hyun; Jeong, Woong Hee; Kim, Dong Lim; Lim, Hyun Soo; Kim, Hyun Jae.

In: Japanese Journal of Applied Physics, Vol. 50, No. 7 PART 1, 070202, 01.07.2011.

Research output: Contribution to journalArticle

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AB - The effects of adding Zr into solution-processed InZnO (IZO) thin-film transistors (TFTs) were investigated with varying Zr content. ZrInZnO (ZIZO) TFTs showed a lower off-current and a sharper subthreshold swing than IZO TFTs. The addition of Zr plays a role in reducing the oxygen vacancies, and thus effectively decreases the carrier concentrations of the ZIZO active layer. The characteristics of various DC bias stresses are provided and discussed to evaluate the reliability of ZIZO TFTs. After 1000 s of various DC bias stresses, although the threshold voltage may shift dramatically, variations in subthreshold swing are negligible.

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