TY - JOUR
T1 - Study on the effects of zr-incorporated inzno thin-film transistors using a solution process
AU - Jeong, Tae
AU - Kim, Si Joon
AU - Yoon, Doo Hyun
AU - Jeong, Woong Hee
AU - Kim, Dong Lim
AU - Lim, Hyun Soo
AU - Kim, Hyun Jae
PY - 2011/7
Y1 - 2011/7
N2 - The effects of adding Zr into solution-processed InZnO (IZO) thin-film transistors (TFTs) were investigated with varying Zr content. ZrInZnO (ZIZO) TFTs showed a lower off-current and a sharper subthreshold swing than IZO TFTs. The addition of Zr plays a role in reducing the oxygen vacancies, and thus effectively decreases the carrier concentrations of the ZIZO active layer. The characteristics of various DC bias stresses are provided and discussed to evaluate the reliability of ZIZO TFTs. After 1000 s of various DC bias stresses, although the threshold voltage may shift dramatically, variations in subthreshold swing are negligible.
AB - The effects of adding Zr into solution-processed InZnO (IZO) thin-film transistors (TFTs) were investigated with varying Zr content. ZrInZnO (ZIZO) TFTs showed a lower off-current and a sharper subthreshold swing than IZO TFTs. The addition of Zr plays a role in reducing the oxygen vacancies, and thus effectively decreases the carrier concentrations of the ZIZO active layer. The characteristics of various DC bias stresses are provided and discussed to evaluate the reliability of ZIZO TFTs. After 1000 s of various DC bias stresses, although the threshold voltage may shift dramatically, variations in subthreshold swing are negligible.
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U2 - 10.1143/JJAP.50.070202
DO - 10.1143/JJAP.50.070202
M3 - Article
AN - SCOPUS:79960657288
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 7 PART 1
M1 - 070202
ER -