Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy

Min Hwan Lee; Kyung Min Kim; Gun Hwan Kim; Jun Yeong Seok; Seul Ji Song; Jung Ho Yoon; Cheol Seong Hwang

doi:10.1063/1.3400222

Study on the electrical conduction mechanism of bipolar resistive switching TiO₂ thin films using impedance spectroscopy

Min Hwan Lee, Kyung Min Kim, Gun Hwan Kim, Jun Yeong Seok, Seul Ji Song, Jung Ho Yoon, Cheol Seong Hwang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The electrical conduction mechanism within a resistive switching TiO ₂ film in its bipolar high resistance state was examined by ac impedance spectroscopy and dc current-voltage measurements. Bipolar switching, which can be initiated from a unipolar high resistance state, was attributed to both modulation of the Schottky barrier height at the film-electrode interface and the electronic energy state in the film. Numerical fittings of the impedance data revealed two distinct RC domains in series, which were attributed to an interfacial barrier (activation energy ∼0.1 eV) and a nonconducting layer (activation energy ∼0.5 eV), respectively.

Original language	English
Article number	152909
Journal	Applied Physics Letters
Volume	96
Issue number	15
DOIs	https://doi.org/10.1063/1.3400222
Publication status	Published - 2010 Apr 12

Bibliographical note

Funding Information:
The authors acknowledge the support of the National Research Program for the Nano Semiconductor Apparatus Development and 0.1 Terabit NVM Devices sponsored by the Korean Ministry of Knowledge and Economy, and World Class University program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology (Grant No. R31-2008-000-10075-0).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3400222

Cite this

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title = "Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy",

abstract = "The electrical conduction mechanism within a resistive switching TiO 2 film in its bipolar high resistance state was examined by ac impedance spectroscopy and dc current-voltage measurements. Bipolar switching, which can be initiated from a unipolar high resistance state, was attributed to both modulation of the Schottky barrier height at the film-electrode interface and the electronic energy state in the film. Numerical fittings of the impedance data revealed two distinct RC domains in series, which were attributed to an interfacial barrier (activation energy ∼0.1 eV) and a nonconducting layer (activation energy ∼0.5 eV), respectively.",

author = "Lee, {Min Hwan} and Kim, {Kyung Min} and Kim, {Gun Hwan} and Seok, {Jun Yeong} and Song, {Seul Ji} and Yoon, {Jung Ho} and Hwang, {Cheol Seong}",

note = "Funding Information: The authors acknowledge the support of the National Research Program for the Nano Semiconductor Apparatus Development and 0.1 Terabit NVM Devices sponsored by the Korean Ministry of Knowledge and Economy, and World Class University program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology (Grant No. R31-2008-000-10075-0).",

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AU - Lee, Min Hwan

AU - Kim, Kyung Min

AU - Kim, Gun Hwan

AU - Seok, Jun Yeong

AU - Song, Seul Ji

AU - Yoon, Jung Ho

AU - Hwang, Cheol Seong

N1 - Funding Information: The authors acknowledge the support of the National Research Program for the Nano Semiconductor Apparatus Development and 0.1 Terabit NVM Devices sponsored by the Korean Ministry of Knowledge and Economy, and World Class University program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology (Grant No. R31-2008-000-10075-0).

PY - 2010/4/12

Y1 - 2010/4/12

N2 - The electrical conduction mechanism within a resistive switching TiO 2 film in its bipolar high resistance state was examined by ac impedance spectroscopy and dc current-voltage measurements. Bipolar switching, which can be initiated from a unipolar high resistance state, was attributed to both modulation of the Schottky barrier height at the film-electrode interface and the electronic energy state in the film. Numerical fittings of the impedance data revealed two distinct RC domains in series, which were attributed to an interfacial barrier (activation energy ∼0.1 eV) and a nonconducting layer (activation energy ∼0.5 eV), respectively.

AB - The electrical conduction mechanism within a resistive switching TiO 2 film in its bipolar high resistance state was examined by ac impedance spectroscopy and dc current-voltage measurements. Bipolar switching, which can be initiated from a unipolar high resistance state, was attributed to both modulation of the Schottky barrier height at the film-electrode interface and the electronic energy state in the film. Numerical fittings of the impedance data revealed two distinct RC domains in series, which were attributed to an interfacial barrier (activation energy ∼0.1 eV) and a nonconducting layer (activation energy ∼0.5 eV), respectively.

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