Study on the formation processes and microstructures of Ni-silicide films on Epi-Si1-xCx

Jung Ho Yoo, Hyun Jin Chang, Mann Ho Cho, Tae Wan Lee, Dae Hong Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the silicide formation in the Ni/epi-Si1-xC x systems. Ni films were deposited on epi-Si1-xC x/Si substrates by DC magnetron sputtering and processed at various temperatures. The sheet resistance of the silicide from the Ni/epi-Si 1-xCx systems was maintained at low values compared to Ni/Si systems. The stability of the silicide layer in Ni/epi-Si 1-xCx system is explained by the presence of the small amount of C in the Ni-silicide layer or at the grain boundaries.

Original languageEnglish
Title of host publicationECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages427-432
Number of pages6
Edition1
DOIs
Publication statusPublished - 2008 Nov 13
EventAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 - Phoenix, AZ, United States
Duration: 2008 May 182008 May 22

Publication series

NameECS Transactions
Number1
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4
CountryUnited States
CityPhoenix, AZ
Period08/5/1808/5/22

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Yoo, J. H., Chang, H. J., Cho, M. H., Lee, T. W., & Ko, D. H. (2008). Study on the formation processes and microstructures of Ni-silicide films on Epi-Si1-xCx. In ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment (1 ed., pp. 427-432). (ECS Transactions; Vol. 13, No. 1). https://doi.org/10.1149/1.2911526