Study on the formation processes and microstructures of Ni-silicide films on Epi-Si1-xCx

Jung Ho Yoo, Hyun Jin Chang, Mann-Ho Cho, Tae Wan Lee, Dae Hong Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the silicide formation in the Ni/epi-Si1-xC x systems. Ni films were deposited on epi-Si1-xC x/Si substrates by DC magnetron sputtering and processed at various temperatures. The sheet resistance of the silicide from the Ni/epi-Si 1-xCx systems was maintained at low values compared to Ni/Si systems. The stability of the silicide layer in Ni/epi-Si 1-xCx system is explained by the presence of the small amount of C in the Ni-silicide layer or at the grain boundaries.

Original languageEnglish
Title of host publicationECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages427-432
Number of pages6
Volume13
Edition1
DOIs
Publication statusPublished - 2008 Nov 13
EventAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 - Phoenix, AZ, United States
Duration: 2008 May 182008 May 22

Other

OtherAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4
CountryUnited States
CityPhoenix, AZ
Period08/5/1808/5/22

Fingerprint

Sheet resistance
Magnetron sputtering
Grain boundaries
Microstructure
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Yoo, J. H., Chang, H. J., Cho, M-H., Lee, T. W., & Ko, D. H. (2008). Study on the formation processes and microstructures of Ni-silicide films on Epi-Si1-xCx In ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment (1 ed., Vol. 13, pp. 427-432) https://doi.org/10.1149/1.2911526
Yoo, Jung Ho ; Chang, Hyun Jin ; Cho, Mann-Ho ; Lee, Tae Wan ; Ko, Dae Hong. / Study on the formation processes and microstructures of Ni-silicide films on Epi-Si1-xCx ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. Vol. 13 1. ed. 2008. pp. 427-432
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Yoo, JH, Chang, HJ, Cho, M-H, Lee, TW & Ko, DH 2008, Study on the formation processes and microstructures of Ni-silicide films on Epi-Si1-xCx in ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1 edn, vol. 13, pp. 427-432, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4, Phoenix, AZ, United States, 08/5/18. https://doi.org/10.1149/1.2911526

Study on the formation processes and microstructures of Ni-silicide films on Epi-Si1-xCx . / Yoo, Jung Ho; Chang, Hyun Jin; Cho, Mann-Ho; Lee, Tae Wan; Ko, Dae Hong.

ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. Vol. 13 1. ed. 2008. p. 427-432.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Yoo JH, Chang HJ, Cho M-H, Lee TW, Ko DH. Study on the formation processes and microstructures of Ni-silicide films on Epi-Si1-xCx In ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1 ed. Vol. 13. 2008. p. 427-432 https://doi.org/10.1149/1.2911526