Study on the photoelectrochemical etching process of semiconducting 6H-SiC wafer

Moo Whan Shin, Jung Gyun Song

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Several dry etching methods which are commonly used for the fabrication of SiC devices are known to result in ion-induced damage on the etched surface, which is highly undesirable for the high frequency and high power device operation. In this paper we report on photoelectrochemical etching process of semiconducting 6H-SiC wafer. The etching process consists of illumination of UV in HF-based electrolyte, thermal oxidation, and HF dipping. An etching rate of 760 Åmin-1 was obtained using a dilute HF(1.4 wt.% in H2O) electrolyte with the etching potential of 3.5 V. The etching rate was found out to increase with the bias voltage. Double-step oxidation process was found out to be useful for the decrease of the surface roughness. It was shown that the addition of H2O2 into the HF solution improves the etching rate of the SiC surface. The PEC etching resulted in a highly anisotropic etching characteristics and shown to have a potential for the fabrication of SiC devices.

Original languageEnglish
Pages (from-to)191-194
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume95
Issue number3
DOIs
Publication statusPublished - 2002 Sep 1

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Etching
etching
wafers
Electrolytes
Fabrication
Anisotropic etching
Oxidation
Dry etching
electrolytes
Bias voltage
oxidation
fabrication
dipping
Lighting
Surface roughness
Ions
surface roughness
illumination
damage
electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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Study on the photoelectrochemical etching process of semiconducting 6H-SiC wafer. / Shin, Moo Whan; Song, Jung Gyun.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 95, No. 3, 01.09.2002, p. 191-194.

Research output: Contribution to journalArticle

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