Study on the precursors for La2O3 thin films deposited on silicon substrate

Jino Jun, Jin Hyung Jun, Doo Jin Choi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

La2O3 thin films were deposited using the DLI-MOCVD and MOCVD method with the precursors of La(tmhd)3, La(tmhd)3- tetraglyme and La(tmhd)3-TETEA. The properties of the La2O3 thin films were characterized.

Original languageEnglish
Pages (from-to)1847-1849
Number of pages3
JournalJournal of Materials Science Letters
Volume21
Issue number23
DOIs
Publication statusPublished - 2002 Dec 1

Fingerprint

Metallorganic chemical vapor deposition
Silicon
Thin films
Substrates
tetraglyme

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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abstract = "La2O3 thin films were deposited using the DLI-MOCVD and MOCVD method with the precursors of La(tmhd)3, La(tmhd)3- tetraglyme and La(tmhd)3-TETEA. The properties of the La2O3 thin films were characterized.",
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Study on the precursors for La2O3 thin films deposited on silicon substrate. / Jun, Jino; Jun, Jin Hyung; Choi, Doo Jin.

In: Journal of Materials Science Letters, Vol. 21, No. 23, 01.12.2002, p. 1847-1849.

Research output: Contribution to journalArticle

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