Study on the structural stability and charge trapping properties of High-k HfO2 and HFO2/Al2O3/HfO2 stacks

Young Soo Ahn, Min Young Huh, Hae Yoon Kang, Hyunchul Sohn

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this work, high-k dielectric stacks of HfO2 and HfO 2/Al2O3/HfO2 (HAH) were deposited on SiO2/ Si substrates by atomic layer deposition as charge trapping layers in charge trapping devices. The structural stability and the charge trapping characteristics of such stacks were investigated using Metal-AluminaHafnia-Oxide-Silicon (MAHOS) structure. The surface roughness of HfO2 was stable up to 11 nm with the insertion of 0.2 nm thick Al2O3. The effect of the thickness of the HAH stack and the thickness of intermediate Al2O3 on charge trapping characteristics were investigated for MAHOS structure under various gate bias pulse with duration of 100 ms. The threshold voltage shift after programming and erase showed that the memory window was increased with increasing bias on gate. However, the programming window was independent of the thickness of HAH charge trapping layers. When the thickness of Al2O3 insertion increased from 0.2 nm to 1 nm, the erase window was decreased without change in the programming window.

Original languageEnglish
Pages (from-to)256-261
Number of pages6
JournalJournal of Korean Institute of Metals and Materials
Volume48
Issue number3
DOIs
Publication statusPublished - 2010 Mar 1

Fingerprint

Charge trapping
Structural Stability
Trapping
Charge
Programming
Silicon oxides
Insertion
Oxides
Silicon
Metals
Atomic layer deposition
SiO2
Surface Roughness
Computer programming
Threshold voltage
Surface roughness
Voltage
Substrate
Data storage equipment
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Modelling and Simulation
  • Surfaces, Coatings and Films
  • Metals and Alloys

Cite this

@article{5105e1bdb02b4b778542d8dd1c9ac164,
title = "Study on the structural stability and charge trapping properties of High-k HfO2 and HFO2/Al2O3/HfO2 stacks",
abstract = "In this work, high-k dielectric stacks of HfO2 and HfO 2/Al2O3/HfO2 (HAH) were deposited on SiO2/ Si substrates by atomic layer deposition as charge trapping layers in charge trapping devices. The structural stability and the charge trapping characteristics of such stacks were investigated using Metal-AluminaHafnia-Oxide-Silicon (MAHOS) structure. The surface roughness of HfO2 was stable up to 11 nm with the insertion of 0.2 nm thick Al2O3. The effect of the thickness of the HAH stack and the thickness of intermediate Al2O3 on charge trapping characteristics were investigated for MAHOS structure under various gate bias pulse with duration of 100 ms. The threshold voltage shift after programming and erase showed that the memory window was increased with increasing bias on gate. However, the programming window was independent of the thickness of HAH charge trapping layers. When the thickness of Al2O3 insertion increased from 0.2 nm to 1 nm, the erase window was decreased without change in the programming window.",
author = "Ahn, {Young Soo} and Huh, {Min Young} and Kang, {Hae Yoon} and Hyunchul Sohn",
year = "2010",
month = "3",
day = "1",
doi = "10.3365/KJMM.2010.48.03.256",
language = "English",
volume = "48",
pages = "256--261",
journal = "Journal of Korean Institute of Metals and Materials",
issn = "1738-8228",
publisher = "Korean Institute of Metals and Materials",
number = "3",

}

Study on the structural stability and charge trapping properties of High-k HfO2 and HFO2/Al2O3/HfO2 stacks. / Ahn, Young Soo; Huh, Min Young; Kang, Hae Yoon; Sohn, Hyunchul.

In: Journal of Korean Institute of Metals and Materials, Vol. 48, No. 3, 01.03.2010, p. 256-261.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Study on the structural stability and charge trapping properties of High-k HfO2 and HFO2/Al2O3/HfO2 stacks

AU - Ahn, Young Soo

AU - Huh, Min Young

AU - Kang, Hae Yoon

AU - Sohn, Hyunchul

PY - 2010/3/1

Y1 - 2010/3/1

N2 - In this work, high-k dielectric stacks of HfO2 and HfO 2/Al2O3/HfO2 (HAH) were deposited on SiO2/ Si substrates by atomic layer deposition as charge trapping layers in charge trapping devices. The structural stability and the charge trapping characteristics of such stacks were investigated using Metal-AluminaHafnia-Oxide-Silicon (MAHOS) structure. The surface roughness of HfO2 was stable up to 11 nm with the insertion of 0.2 nm thick Al2O3. The effect of the thickness of the HAH stack and the thickness of intermediate Al2O3 on charge trapping characteristics were investigated for MAHOS structure under various gate bias pulse with duration of 100 ms. The threshold voltage shift after programming and erase showed that the memory window was increased with increasing bias on gate. However, the programming window was independent of the thickness of HAH charge trapping layers. When the thickness of Al2O3 insertion increased from 0.2 nm to 1 nm, the erase window was decreased without change in the programming window.

AB - In this work, high-k dielectric stacks of HfO2 and HfO 2/Al2O3/HfO2 (HAH) were deposited on SiO2/ Si substrates by atomic layer deposition as charge trapping layers in charge trapping devices. The structural stability and the charge trapping characteristics of such stacks were investigated using Metal-AluminaHafnia-Oxide-Silicon (MAHOS) structure. The surface roughness of HfO2 was stable up to 11 nm with the insertion of 0.2 nm thick Al2O3. The effect of the thickness of the HAH stack and the thickness of intermediate Al2O3 on charge trapping characteristics were investigated for MAHOS structure under various gate bias pulse with duration of 100 ms. The threshold voltage shift after programming and erase showed that the memory window was increased with increasing bias on gate. However, the programming window was independent of the thickness of HAH charge trapping layers. When the thickness of Al2O3 insertion increased from 0.2 nm to 1 nm, the erase window was decreased without change in the programming window.

UR - http://www.scopus.com/inward/record.url?scp=77950405797&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950405797&partnerID=8YFLogxK

U2 - 10.3365/KJMM.2010.48.03.256

DO - 10.3365/KJMM.2010.48.03.256

M3 - Article

VL - 48

SP - 256

EP - 261

JO - Journal of Korean Institute of Metals and Materials

JF - Journal of Korean Institute of Metals and Materials

SN - 1738-8228

IS - 3

ER -