Study on the thermal characteristics of GaN-based laser diodes

Jong Hwa Choi, Moo Whan Shin

Research output: Contribution to journalArticle

Abstract

In this work, we have analyzed the thermal properties of a GaN-based laser diode (LD) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0 to 50 °C, the measured thermal resistance was increased from 20 to 27.5 K/W.

Original languageEnglish
Pages (from-to)685-690
Number of pages6
JournalOptical and Quantum Electronics
Volume42
Issue number11-13
DOIs
Publication statusPublished - 2011 Oct 1

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Semiconductor lasers
thermal resistance
semiconductor lasers
Heat resistance
Cooling
cooling
ambient temperature
Thermodynamic properties
thermodynamic properties
Temperature
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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Study on the thermal characteristics of GaN-based laser diodes. / Choi, Jong Hwa; Shin, Moo Whan.

In: Optical and Quantum Electronics, Vol. 42, No. 11-13, 01.10.2011, p. 685-690.

Research output: Contribution to journalArticle

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