Study on the thermal characteristics of GaN-based laser diodes

Jong Hwa Choi; Moo Whan Shin

doi:10.1007/s11082-011-9455-x

Study on the thermal characteristics of GaN-based laser diodes

Jong Hwa Choi, Moo Whan Shin

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this work, we have analyzed the thermal properties of a GaN-based laser diode (LD) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0 to 50 °C, the measured thermal resistance was increased from 20 to 27.5 K/W.

Original language	English
Pages (from-to)	685-690
Number of pages	6
Journal	Optical and Quantum Electronics
Volume	42
Issue number	11-13
DOIs	https://doi.org/10.1007/s11082-011-9455-x
Publication status	Published - 2011 Oct

Bibliographical note

Funding Information:
This work was financially supported by the Korean Small and Medium Business

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1007/s11082-011-9455-x

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@article{5b7b01164f9440bd8bedfa623b8194ac,

title = "Study on the thermal characteristics of GaN-based laser diodes",

abstract = "In this work, we have analyzed the thermal properties of a GaN-based laser diode (LD) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0 to 50 °C, the measured thermal resistance was increased from 20 to 27.5 K/W.",

author = "Choi, {Jong Hwa} and Shin, {Moo Whan}",

note = "Funding Information: This work was financially supported by the Korean Small and Medium Business",

year = "2011",

month = oct,

doi = "10.1007/s11082-011-9455-x",

language = "English",

volume = "42",

pages = "685--690",

journal = "Optical and Quantum Electronics",

issn = "0306-8919",

publisher = "Springer New York",

number = "11-13",

}

TY - JOUR

T1 - Study on the thermal characteristics of GaN-based laser diodes

AU - Choi, Jong Hwa

AU - Shin, Moo Whan

N1 - Funding Information: This work was financially supported by the Korean Small and Medium Business

PY - 2011/10

Y1 - 2011/10

N2 - In this work, we have analyzed the thermal properties of a GaN-based laser diode (LD) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0 to 50 °C, the measured thermal resistance was increased from 20 to 27.5 K/W.

AB - In this work, we have analyzed the thermal properties of a GaN-based laser diode (LD) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0 to 50 °C, the measured thermal resistance was increased from 20 to 27.5 K/W.

UR - http://www.scopus.com/inward/record.url?scp=80755175824&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80755175824&partnerID=8YFLogxK

U2 - 10.1007/s11082-011-9455-x

DO - 10.1007/s11082-011-9455-x

M3 - Article

AN - SCOPUS:80755175824

SN - 0306-8919

VL - 42

SP - 685

EP - 690

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 11-13

ER -

Study on the thermal characteristics of GaN-based laser diodes

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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