In this work, we have analyzed the thermal properties of a GaN-based laser diode (LD) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0 to 50 °C, the measured thermal resistance was increased from 20 to 27.5 K/W.
Bibliographical noteFunding Information:
This work was financially supported by the Korean Small and Medium Business
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering