Study on the thermal characteristics of GaN-based laser diodes

Jong Hwa Choi; Moo Whan Shin

doi:10.1109/NUSOD.2010.5595693

Study on the thermal characteristics of GaN-based laser diodes

Jong Hwa Choi, Moo Whan Shin

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this work, we have analyzed the thermal properties of a GaN-based LD (Laser Diode) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0 °C to 50 °C, the measured thermal resistance was increased from 20 K/W to 27.5 K/W.

Original language	English
Title of host publication	10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
Pages	5-6
Number of pages	2
DOIs	https://doi.org/10.1109/NUSOD.2010.5595693
Publication status	Published - 2010
Event	10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010 - Atlanta, GA, United States Duration: 2010 Sep 6 → 2010 Sep 9

Publication series

Name	10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010

Other

Other	10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
Country	United States
City	Atlanta, GA
Period	10/9/6 → 10/9/9

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Modelling and Simulation

Access to Document

10.1109/NUSOD.2010.5595693

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Cite this

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title = "Study on the thermal characteristics of GaN-based laser diodes",

abstract = "In this work, we have analyzed the thermal properties of a GaN-based LD (Laser Diode) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0 °C to 50 °C, the measured thermal resistance was increased from 20 K/W to 27.5 K/W.",

author = "Choi, {Jong Hwa} and Shin, {Moo Whan}",

note = "Copyright: Copyright 2010 Elsevier B.V., All rights reserved.; 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010 ; Conference date: 06-09-2010 Through 09-09-2010",

year = "2010",

doi = "10.1109/NUSOD.2010.5595693",

language = "English",

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}

Choi, JH & Shin, MW 2010, Study on the thermal characteristics of GaN-based laser diodes. in 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010., 5595693, 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010, pp. 5-6, 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010, Atlanta, GA, United States, 10/9/6. https://doi.org/10.1109/NUSOD.2010.5595693

Study on the thermal characteristics of GaN-based laser diodes. / Choi, Jong Hwa; Shin, Moo Whan.

10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010. 2010. p. 5-6 5595693 (10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - In this work, we have analyzed the thermal properties of a GaN-based LD (Laser Diode) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0 °C to 50 °C, the measured thermal resistance was increased from 20 K/W to 27.5 K/W.

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