Abstract
In this work, we have analyzed the thermal properties of a GaN-based LD (Laser Diode) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0 °C to 50 °C, the measured thermal resistance was increased from 20 K/W to 27.5 K/W.
| Original language | English |
|---|---|
| Title of host publication | 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010 |
| Pages | 5-6 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2010 Nov 24 |
| Event | 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010 - Atlanta, GA, United States Duration: 2010 Sep 6 → 2010 Sep 9 |
Publication series
| Name | 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010 |
|---|
Other
| Other | 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010 |
|---|---|
| Country | United States |
| City | Atlanta, GA |
| Period | 10/9/6 → 10/9/9 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Modelling and Simulation
Cite this
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Study on the thermal characteristics of GaN-based laser diodes. / Choi, Jong Hwa; Shin, Moo Whan.
10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010. 2010. p. 5-6 5595693 (10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Study on the thermal characteristics of GaN-based laser diodes
AU - Choi, Jong Hwa
AU - Shin, Moo Whan
PY - 2010/11/24
Y1 - 2010/11/24
N2 - In this work, we have analyzed the thermal properties of a GaN-based LD (Laser Diode) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0 °C to 50 °C, the measured thermal resistance was increased from 20 K/W to 27.5 K/W.
AB - In this work, we have analyzed the thermal properties of a GaN-based LD (Laser Diode) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0 °C to 50 °C, the measured thermal resistance was increased from 20 K/W to 27.5 K/W.
UR - http://www.scopus.com/inward/record.url?scp=78449301422&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78449301422&partnerID=8YFLogxK
U2 - 10.1109/NUSOD.2010.5595693
DO - 10.1109/NUSOD.2010.5595693
M3 - Conference contribution
AN - SCOPUS:78449301422
SN - 9781424470174
T3 - 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
SP - 5
EP - 6
BT - 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
ER -