Study on the thermal characteristics of GaN-based laser diodes

Jong Hwa Choi, Moo Whan Shin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this work, we have analyzed the thermal properties of a GaN-based LD (Laser Diode) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0 °C to 50 °C, the measured thermal resistance was increased from 20 K/W to 27.5 K/W.

Original languageEnglish
Title of host publication10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
Pages5-6
Number of pages2
DOIs
Publication statusPublished - 2010 Nov 24
Event10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010 - Atlanta, GA, United States
Duration: 2010 Sep 62010 Sep 9

Publication series

Name10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010

Other

Other10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
CountryUnited States
CityAtlanta, GA
Period10/9/610/9/9

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Modelling and Simulation

Cite this

Choi, J. H., & Shin, M. W. (2010). Study on the thermal characteristics of GaN-based laser diodes. In 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010 (pp. 5-6). [5595693] (10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010). https://doi.org/10.1109/NUSOD.2010.5595693