TY - GEN
T1 - Study on the thermal characteristics of GaN-based laser diodes
AU - Choi, Jong Hwa
AU - Shin, Moo Whan
PY - 2010
Y1 - 2010
N2 - In this work, we have analyzed the thermal properties of a GaN-based LD (Laser Diode) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0 °C to 50 °C, the measured thermal resistance was increased from 20 K/W to 27.5 K/W.
AB - In this work, we have analyzed the thermal properties of a GaN-based LD (Laser Diode) as functions of input powers, cooling conditions, and ambient temperatures. It was found that the thermal resistance has a slight change with input current under the forced cooling condition. In contrast to the forced cooling condition, significant change of thermal resistance was observed under the natural cooling condition. When the ambient temperature was increased from 0 °C to 50 °C, the measured thermal resistance was increased from 20 K/W to 27.5 K/W.
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U2 - 10.1109/NUSOD.2010.5595693
DO - 10.1109/NUSOD.2010.5595693
M3 - Conference contribution
AN - SCOPUS:78449301422
SN - 9781424470174
T3 - 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
SP - 5
EP - 6
BT - 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
T2 - 10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010
Y2 - 6 September 2010 through 9 September 2010
ER -