Study the structure of V/MGO catalyst for H 2 wet oxidation

Eun Ku Lee; Yong Gun Shul; Oh Shim Joo; Kwang Deong Jung

Study the structure of V/MGO catalyst for H ₂ wet oxidation

Eun Ku Lee, Yong Gun Shul, Oh Shim Joo, Kwang Deong Jung

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Conference article

Abstract

The effect of vanadium loading on the activity of V/MgO catalysts was studied for the wet oxidation of H ₂S to sulfur. The H ₂S removal capacity with respect to vanadia content increased ≤ 6 wt %, and decreased with further increase in vanadia loading. The surface coverage calculation of V ₂O ₅ suggested that a vanadia addition up to a monomolecular layer on MgO support increased the H ₂S removal capacity of V/MgO, but the further increase of VO _x surface coverage rather decreased. Raman spectroscopy showed that the small domains of Mg ₃(V0 ₄) ₂ could be present on V/MgO with lt; 6 wt % V loading. TPR experiments showed that V/MgO catalysts with the loading below 6 wt % V were more reducible than those above 6 wt % V. The H ₂S oxidation with V/MgO proceeded from the redox mechanism and V ₃₊ formation, deep reduction, was responsible for the deactivation of V/MgO. This is an abstract of a paper presented at the 227th ACS National Meeting (Anaheim, CA 3/28/2004-4/1/2004).

Original language	English
Journal	ACS National Meeting Book of Abstracts
Volume	227
Issue number	2
Publication status	Published - 2004 Jun 1
Event	227th ACS National Meeting Abstracts of Papers - Anaheim, CA., United States Duration: 2004 Mar 28 → 2004 Apr 1

All Science Journal Classification (ASJC) codes

Chemistry(all)
Chemical Engineering(all)

Access to Document

Fingerprint Dive into the research topics of 'Study the structure of V/MGO catalyst for H <sub>2</sub> wet oxidation'. Together they form a unique fingerprint.

Cite this

Lee, E. K., Shul, Y. G., Joo, O. S., & Jung, K. D. (2004). Study the structure of V/MGO catalyst for H ₂ wet oxidation. ACS National Meeting Book of Abstracts, 227(2).

@article{c322c52bb8434d0fb209e6c9158b2bc6,

title = "Study the structure of V/MGO catalyst for H 2 wet oxidation",

abstract = "The effect of vanadium loading on the activity of V/MgO catalysts was studied for the wet oxidation of H 2S to sulfur. The H 2S removal capacity with respect to vanadia content increased ≤ 6 wt %, and decreased with further increase in vanadia loading. The surface coverage calculation of V 2O 5 suggested that a vanadia addition up to a monomolecular layer on MgO support increased the H 2S removal capacity of V/MgO, but the further increase of VO x surface coverage rather decreased. Raman spectroscopy showed that the small domains of Mg 3(V0 4) 2 could be present on V/MgO with lt; 6 wt % V loading. TPR experiments showed that V/MgO catalysts with the loading below 6 wt % V were more reducible than those above 6 wt % V. The H 2S oxidation with V/MgO proceeded from the redox mechanism and V 3+ formation, deep reduction, was responsible for the deactivation of V/MgO. This is an abstract of a paper presented at the 227th ACS National Meeting (Anaheim, CA 3/28/2004-4/1/2004).",

author = "Lee, {Eun Ku} and Shul, {Yong Gun} and Joo, {Oh Shim} and Jung, {Kwang Deong}",

year = "2004",

month = jun,

day = "1",

language = "English",

volume = "227",

journal = "ACS National Meeting Book of Abstracts",

issn = "0065-7727",

publisher = "American Chemical Society",

number = "2",

note = "227th ACS National Meeting Abstracts of Papers ; Conference date: 28-03-2004 Through 01-04-2004",

}

TY - JOUR

T1 - Study the structure of V/MGO catalyst for H 2 wet oxidation

AU - Lee, Eun Ku

AU - Shul, Yong Gun

AU - Joo, Oh Shim

AU - Jung, Kwang Deong

PY - 2004/6/1

Y1 - 2004/6/1

N2 - The effect of vanadium loading on the activity of V/MgO catalysts was studied for the wet oxidation of H 2S to sulfur. The H 2S removal capacity with respect to vanadia content increased ≤ 6 wt %, and decreased with further increase in vanadia loading. The surface coverage calculation of V 2O 5 suggested that a vanadia addition up to a monomolecular layer on MgO support increased the H 2S removal capacity of V/MgO, but the further increase of VO x surface coverage rather decreased. Raman spectroscopy showed that the small domains of Mg 3(V0 4) 2 could be present on V/MgO with lt; 6 wt % V loading. TPR experiments showed that V/MgO catalysts with the loading below 6 wt % V were more reducible than those above 6 wt % V. The H 2S oxidation with V/MgO proceeded from the redox mechanism and V 3+ formation, deep reduction, was responsible for the deactivation of V/MgO. This is an abstract of a paper presented at the 227th ACS National Meeting (Anaheim, CA 3/28/2004-4/1/2004).

AB - The effect of vanadium loading on the activity of V/MgO catalysts was studied for the wet oxidation of H 2S to sulfur. The H 2S removal capacity with respect to vanadia content increased ≤ 6 wt %, and decreased with further increase in vanadia loading. The surface coverage calculation of V 2O 5 suggested that a vanadia addition up to a monomolecular layer on MgO support increased the H 2S removal capacity of V/MgO, but the further increase of VO x surface coverage rather decreased. Raman spectroscopy showed that the small domains of Mg 3(V0 4) 2 could be present on V/MgO with lt; 6 wt % V loading. TPR experiments showed that V/MgO catalysts with the loading below 6 wt % V were more reducible than those above 6 wt % V. The H 2S oxidation with V/MgO proceeded from the redox mechanism and V 3+ formation, deep reduction, was responsible for the deactivation of V/MgO. This is an abstract of a paper presented at the 227th ACS National Meeting (Anaheim, CA 3/28/2004-4/1/2004).

UR - http://www.scopus.com/inward/record.url?scp=84862360346&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862360346&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:84862360346

VL - 227

JO - ACS National Meeting Book of Abstracts

JF - ACS National Meeting Book of Abstracts

SN - 0065-7727

IS - 2

T2 - 227th ACS National Meeting Abstracts of Papers

Y2 - 28 March 2004 through 1 April 2004

ER -