Abstract
The effect of vanadium loading on the activity of V/MgO catalysts was studied for the wet oxidation of H 2S to sulfur. The H 2S removal capacity with respect to vanadia content increased ≤ 6 wt %, and decreased with further increase in vanadia loading. The surface coverage calculation of V 2O 5 suggested that a vanadia addition up to a monomolecular layer on MgO support increased the H 2S removal capacity of V/MgO, but the further increase of VO x surface coverage rather decreased. Raman spectroscopy showed that the small domains of Mg 3(V0 4) 2 could be present on V/MgO with lt; 6 wt % V loading. TPR experiments showed that V/MgO catalysts with the loading below 6 wt % V were more reducible than those above 6 wt % V. The H 2S oxidation with V/MgO proceeded from the redox mechanism and V 3+ formation, deep reduction, was responsible for the deactivation of V/MgO. This is an abstract of a paper presented at the 227th ACS National Meeting (Anaheim, CA 3/28/2004-4/1/2004).
| Original language | English |
|---|---|
| Journal | ACS National Meeting Book of Abstracts |
| Volume | 227 |
| Issue number | 2 |
| Publication status | Published - 2004 Jun 1 |
| Event | 227th ACS National Meeting Abstracts of Papers - Anaheim, CA., United States Duration: 2004 Mar 28 → 2004 Apr 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Chemical Engineering(all)
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Study the structure of V/MGO catalyst for H 2 wet oxidation. / Lee, Eun Ku; Shul, Yong Gun; Joo, Oh Shim; Jung, Kwang Deong.
In: ACS National Meeting Book of Abstracts, Vol. 227, No. 2, 01.06.2004.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Study the structure of V/MGO catalyst for H 2 wet oxidation
AU - Lee, Eun Ku
AU - Shul, Yong Gun
AU - Joo, Oh Shim
AU - Jung, Kwang Deong
PY - 2004/6/1
Y1 - 2004/6/1
N2 - The effect of vanadium loading on the activity of V/MgO catalysts was studied for the wet oxidation of H 2S to sulfur. The H 2S removal capacity with respect to vanadia content increased ≤ 6 wt %, and decreased with further increase in vanadia loading. The surface coverage calculation of V 2O 5 suggested that a vanadia addition up to a monomolecular layer on MgO support increased the H 2S removal capacity of V/MgO, but the further increase of VO x surface coverage rather decreased. Raman spectroscopy showed that the small domains of Mg 3(V0 4) 2 could be present on V/MgO with lt; 6 wt % V loading. TPR experiments showed that V/MgO catalysts with the loading below 6 wt % V were more reducible than those above 6 wt % V. The H 2S oxidation with V/MgO proceeded from the redox mechanism and V 3+ formation, deep reduction, was responsible for the deactivation of V/MgO. This is an abstract of a paper presented at the 227th ACS National Meeting (Anaheim, CA 3/28/2004-4/1/2004).
AB - The effect of vanadium loading on the activity of V/MgO catalysts was studied for the wet oxidation of H 2S to sulfur. The H 2S removal capacity with respect to vanadia content increased ≤ 6 wt %, and decreased with further increase in vanadia loading. The surface coverage calculation of V 2O 5 suggested that a vanadia addition up to a monomolecular layer on MgO support increased the H 2S removal capacity of V/MgO, but the further increase of VO x surface coverage rather decreased. Raman spectroscopy showed that the small domains of Mg 3(V0 4) 2 could be present on V/MgO with lt; 6 wt % V loading. TPR experiments showed that V/MgO catalysts with the loading below 6 wt % V were more reducible than those above 6 wt % V. The H 2S oxidation with V/MgO proceeded from the redox mechanism and V 3+ formation, deep reduction, was responsible for the deactivation of V/MgO. This is an abstract of a paper presented at the 227th ACS National Meeting (Anaheim, CA 3/28/2004-4/1/2004).
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UR - http://www.scopus.com/inward/citedby.url?scp=84862360346&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:84862360346
VL - 227
JO - ACS National Meeting Book of Abstracts
JF - ACS National Meeting Book of Abstracts
SN - 0065-7727
IS - 2
ER -