Sub-1-V CMOS image sensor using time-based readout circuit

Kunhee Cho, Dongmyung Lee, Jeonghwan Lee, Gunhee Han

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

This paper proposes a sub-1-V CMOS image sensor using a time-based readout (TBR) circuit. The proposed TBR circuit senses the moment of event from the pixel instead of reading the voltage signal. This allows the use of low power-supply voltage in pixel, providing sufficient dynamic range. The prototype chip was fabricated with a 0.13-μm standard CMOS logic process, and whole circuits were designed with thin-oxide gate transistors only. The measurement results show a 54.2-dB dynamic range with 0.75-V power-supply voltage.

Original languageEnglish
Article number5350740
Pages (from-to)222-227
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume57
Issue number1
DOIs
Publication statusPublished - 2010 Jan 1

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Image sensors
Networks (circuits)
Electric potential
Pixels
Oxides
Transistors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Cho, Kunhee ; Lee, Dongmyung ; Lee, Jeonghwan ; Han, Gunhee. / Sub-1-V CMOS image sensor using time-based readout circuit. In: IEEE Transactions on Electron Devices. 2010 ; Vol. 57, No. 1. pp. 222-227.
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Sub-1-V CMOS image sensor using time-based readout circuit. / Cho, Kunhee; Lee, Dongmyung; Lee, Jeonghwan; Han, Gunhee.

In: IEEE Transactions on Electron Devices, Vol. 57, No. 1, 5350740, 01.01.2010, p. 222-227.

Research output: Contribution to journalArticle

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