Sub-1-V CMOS image sensor using time-based readout circuit

Kunhee Cho; Dongmyung Lee; Jeonghwan Lee; Gunhee Han

doi:10.1109/TED.2009.2035194

Sub-1-V CMOS image sensor using time-based readout circuit

Kunhee Cho, Dongmyung Lee, Jeonghwan Lee, Gunhee Han

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

This paper proposes a sub-1-V CMOS image sensor using a time-based readout (TBR) circuit. The proposed TBR circuit senses the moment of event from the pixel instead of reading the voltage signal. This allows the use of low power-supply voltage in pixel, providing sufficient dynamic range. The prototype chip was fabricated with a 0.13-μm standard CMOS logic process, and whole circuits were designed with thin-oxide gate transistors only. The measurement results show a 54.2-dB dynamic range with 0.75-V power-supply voltage.

Original language	English
Article number	5350740
Pages (from-to)	222-227
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	1
DOIs	https://doi.org/10.1109/TED.2009.2035194
Publication status	Published - 2010 Jan

Bibliographical note

Funding Information:
Manuscript received March 17, 2009; revised October 14, 2009. Current version published December 23, 2009. This work was supported in part by the Ministry of Knowledge Economy, Korea, under the System IC 2010 support program and in part by Samsung Electronics Company, Ltd. The review of this paper was arranged by Editor J. Tower.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2009.2035194

Cite this

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Sub-1-V CMOS image sensor using time-based readout circuit

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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