This paper proposes a sub-1-V CMOS image sensor using a time-based readout (TBR) circuit. The proposed TBR circuit senses the moment of event from the pixel instead of reading the voltage signal. This allows the use of low power-supply voltage in pixel, providing sufficient dynamic range. The prototype chip was fabricated with a 0.13-μm standard CMOS logic process, and whole circuits were designed with thin-oxide gate transistors only. The measurement results show a 54.2-dB dynamic range with 0.75-V power-supply voltage.
|Number of pages||6|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 2010 Jan|
Bibliographical noteFunding Information:
Manuscript received March 17, 2009; revised October 14, 2009. Current version published December 23, 2009. This work was supported in part by the Ministry of Knowledge Economy, Korea, under the System IC 2010 support program and in part by Samsung Electronics Company, Ltd. The review of this paper was arranged by Editor J. Tower.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering