Sub-10 nm graphene nanoribbon array field-effect transistors fabricated by block copolymer lithography

Jeong Gon Son, Myungwoo Son, Kyeong Joo Moon, Byoung Hun Lee, Jae Min Myoung, Michael S. Strano, Moon Ho Ham, Caroline A. Ross

Research output: Contribution to journalArticle

110 Citations (Scopus)

Abstract

Sub-10 nm Graphene Nanoribbon Arrays are fabricated over large areas by etching CVD-grown graphene. A mask is used made by the directed self-assembly of a cylindrical PS-b-PDMS block copolymer under solvent annealing guided by a removable template. The optimized solvent annealing process, surface-modified removable polymeric templates, and high Flory-Huggins interaction parameters of the block copolymer enable a highly aligned array of nanoribbons with low line edge roughness to be formed. This leads to a higher on/off ratio and stronger temperature dependence of the current for nanoribbon FETs, and a photocurrent which is 30 times larger compared to unpatterned graphene.

Original languageEnglish
Pages (from-to)4723-4728
Number of pages6
JournalAdvanced Materials
Volume25
Issue number34
DOIs
Publication statusPublished - 2013 Sep 14

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Son, J. G., Son, M., Moon, K. J., Lee, B. H., Myoung, J. M., Strano, M. S., Ham, M. H., & Ross, C. A. (2013). Sub-10 nm graphene nanoribbon array field-effect transistors fabricated by block copolymer lithography. Advanced Materials, 25(34), 4723-4728. https://doi.org/10.1002/adma.201300813