Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications

T. W. Kim, D. H. Kim, D. H. Koh, H. M. Kwon, R. H. Baek, D. Veksler, C. Huffman, K. Matthews, S. Oktyabrsky, A. Greene, Y. Ohsawa, A. Ko, H. Nakajima, M. Takahashi, T. Nishizuka, H. Ohtake, S. K. Banerjee, S. H. Shin, D. H. Ko, C. KangD. Gilmer, R. J.W. Hill, W. Maszara, C. Hobbs, P. D. Kirsch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Citations (Scopus)

Abstract

This paper reports tri-gate sub-100 nm In0.53Ga0.47As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of gm, max > 1.5 mS/μm, at VDS = 0.5 V. This result is the best balance of g m, max and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ0 = 760 cm2/V-s and peak vx0 = 1.6×107 cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.

Original languageEnglish
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages16.3.1-16.3.4
DOIs
Publication statusPublished - 2013 Dec 1
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: 2013 Dec 92013 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period13/12/913/12/11

Fingerprint

Carrier transport
Semiconductor quantum wells
logic
Electrostatics
field effect transistors
quantum wells
immunity
electrostatics

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kim, T. W., Kim, D. H., Koh, D. H., Kwon, H. M., Baek, R. H., Veksler, D., ... Kirsch, P. D. (2013). Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 16.3.1-16.3.4). [6724641] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724641
Kim, T. W. ; Kim, D. H. ; Koh, D. H. ; Kwon, H. M. ; Baek, R. H. ; Veksler, D. ; Huffman, C. ; Matthews, K. ; Oktyabrsky, S. ; Greene, A. ; Ohsawa, Y. ; Ko, A. ; Nakajima, H. ; Takahashi, M. ; Nishizuka, T. ; Ohtake, H. ; Banerjee, S. K. ; Shin, S. H. ; Ko, D. H. ; Kang, C. ; Gilmer, D. ; Hill, R. J.W. ; Maszara, W. ; Hobbs, C. ; Kirsch, P. D. / Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications. 2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. pp. 16.3.1-16.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).
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title = "Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications",
abstract = "This paper reports tri-gate sub-100 nm In0.53Ga0.47As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of gm, max > 1.5 mS/μm, at VDS = 0.5 V. This result is the best balance of g m, max and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ0 = 760 cm2/V-s and peak vx0 = 1.6×107 cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.",
author = "Kim, {T. W.} and Kim, {D. H.} and Koh, {D. H.} and Kwon, {H. M.} and Baek, {R. H.} and D. Veksler and C. Huffman and K. Matthews and S. Oktyabrsky and A. Greene and Y. Ohsawa and A. Ko and H. Nakajima and M. Takahashi and T. Nishizuka and H. Ohtake and Banerjee, {S. K.} and Shin, {S. H.} and Ko, {D. H.} and C. Kang and D. Gilmer and Hill, {R. J.W.} and W. Maszara and C. Hobbs and Kirsch, {P. D.}",
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Kim, TW, Kim, DH, Koh, DH, Kwon, HM, Baek, RH, Veksler, D, Huffman, C, Matthews, K, Oktyabrsky, S, Greene, A, Ohsawa, Y, Ko, A, Nakajima, H, Takahashi, M, Nishizuka, T, Ohtake, H, Banerjee, SK, Shin, SH, Ko, DH, Kang, C, Gilmer, D, Hill, RJW, Maszara, W, Hobbs, C & Kirsch, PD 2013, Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications. in 2013 IEEE International Electron Devices Meeting, IEDM 2013., 6724641, Technical Digest - International Electron Devices Meeting, IEDM, pp. 16.3.1-16.3.4, 2013 IEEE International Electron Devices Meeting, IEDM 2013, Washington, DC, United States, 13/12/9. https://doi.org/10.1109/IEDM.2013.6724641

Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications. / Kim, T. W.; Kim, D. H.; Koh, D. H.; Kwon, H. M.; Baek, R. H.; Veksler, D.; Huffman, C.; Matthews, K.; Oktyabrsky, S.; Greene, A.; Ohsawa, Y.; Ko, A.; Nakajima, H.; Takahashi, M.; Nishizuka, T.; Ohtake, H.; Banerjee, S. K.; Shin, S. H.; Ko, D. H.; Kang, C.; Gilmer, D.; Hill, R. J.W.; Maszara, W.; Hobbs, C.; Kirsch, P. D.

2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 16.3.1-16.3.4 6724641 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications

AU - Kim, T. W.

AU - Kim, D. H.

AU - Koh, D. H.

AU - Kwon, H. M.

AU - Baek, R. H.

AU - Veksler, D.

AU - Huffman, C.

AU - Matthews, K.

AU - Oktyabrsky, S.

AU - Greene, A.

AU - Ohsawa, Y.

AU - Ko, A.

AU - Nakajima, H.

AU - Takahashi, M.

AU - Nishizuka, T.

AU - Ohtake, H.

AU - Banerjee, S. K.

AU - Shin, S. H.

AU - Ko, D. H.

AU - Kang, C.

AU - Gilmer, D.

AU - Hill, R. J.W.

AU - Maszara, W.

AU - Hobbs, C.

AU - Kirsch, P. D.

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N2 - This paper reports tri-gate sub-100 nm In0.53Ga0.47As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of gm, max > 1.5 mS/μm, at VDS = 0.5 V. This result is the best balance of g m, max and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ0 = 760 cm2/V-s and peak vx0 = 1.6×107 cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.

AB - This paper reports tri-gate sub-100 nm In0.53Ga0.47As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of gm, max > 1.5 mS/μm, at VDS = 0.5 V. This result is the best balance of g m, max and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ0 = 760 cm2/V-s and peak vx0 = 1.6×107 cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.

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DO - 10.1109/IEDM.2013.6724641

M3 - Conference contribution

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SN - 9781479923076

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 16.3.1-16.3.4

BT - 2013 IEEE International Electron Devices Meeting, IEDM 2013

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Kim TW, Kim DH, Koh DH, Kwon HM, Baek RH, Veksler D et al. Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications. In 2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 16.3.1-16.3.4. 6724641. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724641