Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications

T. W. Kim, D. H. Kim, D. H. Koh, H. M. Kwon, R. H. Baek, D. Veksler, C. Huffman, K. Matthews, S. Oktyabrsky, A. Greene, Y. Ohsawa, A. Ko, H. Nakajima, M. Takahashi, T. Nishizuka, H. Ohtake, S. K. Banerjee, S. H. Shin, D. H. Ko, C. KangD. Gilmer, R. J.W. Hill, W. Maszara, C. Hobbs, P. D. Kirsch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

23 Citations (Scopus)

Abstract

This paper reports tri-gate sub-100 nm In0.53Ga0.47As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of gm, max > 1.5 mS/μm, at VDS = 0.5 V. This result is the best balance of g m, max and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ0 = 760 cm2/V-s and peak vx0 = 1.6×107 cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.

Original languageEnglish
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages16.3.1-16.3.4
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: 2013 Dec 92013 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period13/12/913/12/11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Kim, T. W., Kim, D. H., Koh, D. H., Kwon, H. M., Baek, R. H., Veksler, D., Huffman, C., Matthews, K., Oktyabrsky, S., Greene, A., Ohsawa, Y., Ko, A., Nakajima, H., Takahashi, M., Nishizuka, T., Ohtake, H., Banerjee, S. K., Shin, S. H., Ko, D. H., ... Kirsch, P. D. (2013). Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications. In 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 16.3.1-16.3.4). [6724641] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724641