@inproceedings{0fadb678468c47e2a6fff313f54426e4,
title = "Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications",
abstract = "This paper reports tri-gate sub-100 nm In0.53Ga0.47As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of gm, max > 1.5 mS/μm, at VDS = 0.5 V. This result is the best balance of g m, max and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ0 = 760 cm2/V-s and peak vx0 = 1.6×107 cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.",
author = "Kim, {T. W.} and Kim, {D. H.} and Koh, {D. H.} and Kwon, {H. M.} and Baek, {R. H.} and D. Veksler and C. Huffman and K. Matthews and S. Oktyabrsky and A. Greene and Y. Ohsawa and A. Ko and H. Nakajima and M. Takahashi and T. Nishizuka and H. Ohtake and Banerjee, {S. K.} and Shin, {S. H.} and Ko, {D. H.} and C. Kang and D. Gilmer and Hill, {R. J.W.} and W. Maszara and C. Hobbs and Kirsch, {P. D.}",
note = "Copyright: Copyright 2014 Elsevier B.V., All rights reserved.; 2013 IEEE International Electron Devices Meeting, IEDM 2013 ; Conference date: 09-12-2013 Through 11-12-2013",
year = "2013",
doi = "10.1109/IEDM.2013.6724641",
language = "English",
isbn = "9781479923076",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "16.3.1--16.3.4",
booktitle = "2013 IEEE International Electron Devices Meeting, IEDM 2013",
}