Abstract
This paper reports tri-gate sub-100 nm In0.53Ga0.47As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of gm, max > 1.5 mS/μm, at VDS = 0.5 V. This result is the best balance of g m, max and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ0 = 760 cm2/V-s and peak vx0 = 1.6×107 cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.
| Original language | English |
|---|---|
| Title of host publication | 2013 IEEE International Electron Devices Meeting, IEDM 2013 |
| Pages | 16.3.1-16.3.4 |
| DOIs | |
| Publication status | Published - 2013 Dec 1 |
| Event | 2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States Duration: 2013 Dec 9 → 2013 Dec 11 |
Publication series
| Name | Technical Digest - International Electron Devices Meeting, IEDM |
|---|---|
| ISSN (Print) | 0163-1918 |
Other
| Other | 2013 IEEE International Electron Devices Meeting, IEDM 2013 |
|---|---|
| Country | United States |
| City | Washington, DC |
| Period | 13/12/9 → 13/12/11 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
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Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications. / Kim, T. W.; Kim, D. H.; Koh, D. H.; Kwon, H. M.; Baek, R. H.; Veksler, D.; Huffman, C.; Matthews, K.; Oktyabrsky, S.; Greene, A.; Ohsawa, Y.; Ko, A.; Nakajima, H.; Takahashi, M.; Nishizuka, T.; Ohtake, H.; Banerjee, S. K.; Shin, S. H.; Ko, D. H.; Kang, C.; Gilmer, D.; Hill, R. J.W.; Maszara, W.; Hobbs, C.; Kirsch, P. D.
2013 IEEE International Electron Devices Meeting, IEDM 2013. 2013. p. 16.3.1-16.3.4 6724641 (Technical Digest - International Electron Devices Meeting, IEDM).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications
AU - Kim, T. W.
AU - Kim, D. H.
AU - Koh, D. H.
AU - Kwon, H. M.
AU - Baek, R. H.
AU - Veksler, D.
AU - Huffman, C.
AU - Matthews, K.
AU - Oktyabrsky, S.
AU - Greene, A.
AU - Ohsawa, Y.
AU - Ko, A.
AU - Nakajima, H.
AU - Takahashi, M.
AU - Nishizuka, T.
AU - Ohtake, H.
AU - Banerjee, S. K.
AU - Shin, S. H.
AU - Ko, D. H.
AU - Kang, C.
AU - Gilmer, D.
AU - Hill, R. J.W.
AU - Maszara, W.
AU - Hobbs, C.
AU - Kirsch, P. D.
PY - 2013/12/1
Y1 - 2013/12/1
N2 - This paper reports tri-gate sub-100 nm In0.53Ga0.47As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of gm, max > 1.5 mS/μm, at VDS = 0.5 V. This result is the best balance of g m, max and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ0 = 760 cm2/V-s and peak vx0 = 1.6×107 cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.
AB - This paper reports tri-gate sub-100 nm In0.53Ga0.47As QW MOSFETs with electrostatic immunity of S = 77 mV/dec., DIBL = 10 mV/V, together with excellent carrier transport of gm, max > 1.5 mS/μm, at VDS = 0.5 V. This result is the best balance of g m, max and S in any reported III-V MOSFETs. In addition, extracted compact model parameter including (μ0 = 760 cm2/V-s and peak vx0 = 1.6×107 cm/s) indicate that InGaAs Tri-Gate MOSFETs would be a viable pathway to sub-10nm technology node.
UR - http://www.scopus.com/inward/record.url?scp=84894383437&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84894383437&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2013.6724641
DO - 10.1109/IEDM.2013.6724641
M3 - Conference contribution
AN - SCOPUS:84894383437
SN - 9781479923076
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 16.3.1-16.3.4
BT - 2013 IEEE International Electron Devices Meeting, IEDM 2013
ER -