TY - GEN
T1 - Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s
AU - Shin, C. S.
AU - Park, W. K.
AU - Shin, Sh
AU - Cho, Yd
AU - Ko, Dh
AU - Kim, T. W.
AU - Koh, D. H.
AU - Kwon, Hm
AU - Hill, R. J.W.
AU - Kirsch, P.
AU - Maszara, W.
AU - Kim, D. H.
N1 - Publisher Copyright:
© 2014 IEEE.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014/9/8
Y1 - 2014/9/8
N2 - This paper reports on gate-last (GL) In0.7Ga0.3As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μn,eff>5,500 cm2/V-s at 300k). Short-channel device with Lg = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with gm-max = 2 mS/μm at VDS = 0.5 V. This record performance is achieved by using a low Dit and Al2O3/HfO2 gate stack with EOT ∼ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.
AB - This paper reports on gate-last (GL) In0.7Ga0.3As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μn,eff>5,500 cm2/V-s at 300k). Short-channel device with Lg = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with gm-max = 2 mS/μm at VDS = 0.5 V. This record performance is achieved by using a low Dit and Al2O3/HfO2 gate stack with EOT ∼ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.
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U2 - 10.1109/VLSIT.2014.6894351
DO - 10.1109/VLSIT.2014.6894351
M3 - Conference contribution
AN - SCOPUS:84907700202
T3 - Digest of Technical Papers - Symposium on VLSI Technology
BT - Digest of Technical Papers - Symposium on VLSI Technology
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 34th Symposium on VLSI Technology, VLSIT 2014
Y2 - 9 June 2014 through 12 June 2014
ER -