Abstract
This paper reports on gate-last (GL) In0.7Ga0.3As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μn,eff>5,500 cm2/V-s at 300k). Short-channel device with Lg = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with gm-max = 2 mS/μm at VDS = 0.5 V. This record performance is achieved by using a low Dit and Al2O3/HfO2 gate stack with EOT ∼ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.
| Original language | English |
|---|---|
| Title of host publication | Digest of Technical Papers - Symposium on VLSI Technology |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479933310 |
| DOIs | |
| Publication status | Published - 2014 Sep 8 |
| Event | 34th Symposium on VLSI Technology, VLSIT 2014 - Honolulu, United States Duration: 2014 Jun 9 → 2014 Jun 12 |
Publication series
| Name | Digest of Technical Papers - Symposium on VLSI Technology |
|---|---|
| ISSN (Print) | 0743-1562 |
Other
| Other | 34th Symposium on VLSI Technology, VLSIT 2014 |
|---|---|
| Country | United States |
| City | Honolulu |
| Period | 14/6/9 → 14/6/12 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
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Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s. / Shin, C. S.; Park, W. K.; Shin, Sh; Cho, Yd; Ko, Dae Hong; Kim, T. W.; Koh, D. H.; Kwon, Hm; Hill, R. J.W.; Kirsch, P.; Maszara, W.; Kim, D. H.
Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 2014. 6894351 (Digest of Technical Papers - Symposium on VLSI Technology).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s
AU - Shin, C. S.
AU - Park, W. K.
AU - Shin, Sh
AU - Cho, Yd
AU - Ko, Dae Hong
AU - Kim, T. W.
AU - Koh, D. H.
AU - Kwon, Hm
AU - Hill, R. J.W.
AU - Kirsch, P.
AU - Maszara, W.
AU - Kim, D. H.
PY - 2014/9/8
Y1 - 2014/9/8
N2 - This paper reports on gate-last (GL) In0.7Ga0.3As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μn,eff>5,500 cm2/V-s at 300k). Short-channel device with Lg = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with gm-max = 2 mS/μm at VDS = 0.5 V. This record performance is achieved by using a low Dit and Al2O3/HfO2 gate stack with EOT ∼ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.
AB - This paper reports on gate-last (GL) In0.7Ga0.3As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μn,eff>5,500 cm2/V-s at 300k). Short-channel device with Lg = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with gm-max = 2 mS/μm at VDS = 0.5 V. This record performance is achieved by using a low Dit and Al2O3/HfO2 gate stack with EOT ∼ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.
UR - http://www.scopus.com/inward/record.url?scp=84907700202&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84907700202&partnerID=8YFLogxK
U2 - 10.1109/VLSIT.2014.6894351
DO - 10.1109/VLSIT.2014.6894351
M3 - Conference contribution
AN - SCOPUS:84907700202
T3 - Digest of Technical Papers - Symposium on VLSI Technology
BT - Digest of Technical Papers - Symposium on VLSI Technology
PB - Institute of Electrical and Electronics Engineers Inc.
ER -