Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s

C. S. Shin, W. K. Park, Sh Shin, Yd Cho, Dae Hong Ko, T. W. Kim, D. H. Koh, Hm Kwon, R. J.W. Hill, P. Kirsch, W. Maszara, D. H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This paper reports on gate-last (GL) In0.7Ga0.3As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μn,eff>5,500 cm2/V-s at 300k). Short-channel device with Lg = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with gm-max = 2 mS/μm at VDS = 0.5 V. This record performance is achieved by using a low Dit and Al2O3/HfO2 gate stack with EOT ∼ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479933310
DOIs
Publication statusPublished - 2014 Sep 8
Event34th Symposium on VLSI Technology, VLSIT 2014 - Honolulu, United States
Duration: 2014 Jun 92014 Jun 12

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other34th Symposium on VLSI Technology, VLSIT 2014
CountryUnited States
CityHonolulu
Period14/6/914/6/12

Fingerprint

Metallorganic chemical vapor deposition
Electrostatics
Carrier transport

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Shin, C. S., Park, W. K., Shin, S., Cho, Y., Ko, D. H., Kim, T. W., ... Kim, D. H. (2014). Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s. In Digest of Technical Papers - Symposium on VLSI Technology [6894351] (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2014.6894351
Shin, C. S. ; Park, W. K. ; Shin, Sh ; Cho, Yd ; Ko, Dae Hong ; Kim, T. W. ; Koh, D. H. ; Kwon, Hm ; Hill, R. J.W. ; Kirsch, P. ; Maszara, W. ; Kim, D. H. / Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s. Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 2014. (Digest of Technical Papers - Symposium on VLSI Technology).
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abstract = "This paper reports on gate-last (GL) In0.7Ga0.3As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μn,eff>5,500 cm2/V-s at 300k). Short-channel device with Lg = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with gm-max = 2 mS/μm at VDS = 0.5 V. This record performance is achieved by using a low Dit and Al2O3/HfO2 gate stack with EOT ∼ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.",
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Shin, CS, Park, WK, Shin, S, Cho, Y, Ko, DH, Kim, TW, Koh, DH, Kwon, H, Hill, RJW, Kirsch, P, Maszara, W & Kim, DH 2014, Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s. in Digest of Technical Papers - Symposium on VLSI Technology., 6894351, Digest of Technical Papers - Symposium on VLSI Technology, Institute of Electrical and Electronics Engineers Inc., 34th Symposium on VLSI Technology, VLSIT 2014, Honolulu, United States, 14/6/9. https://doi.org/10.1109/VLSIT.2014.6894351

Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s. / Shin, C. S.; Park, W. K.; Shin, Sh; Cho, Yd; Ko, Dae Hong; Kim, T. W.; Koh, D. H.; Kwon, Hm; Hill, R. J.W.; Kirsch, P.; Maszara, W.; Kim, D. H.

Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 2014. 6894351 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - This paper reports on gate-last (GL) In0.7Ga0.3As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μn,eff>5,500 cm2/V-s at 300k). Short-channel device with Lg = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with gm-max = 2 mS/μm at VDS = 0.5 V. This record performance is achieved by using a low Dit and Al2O3/HfO2 gate stack with EOT ∼ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.

AB - This paper reports on gate-last (GL) In0.7Ga0.3As QW MOSFETs with regrown S/D by MOCVD. Long-channel devices exhibit excellent electrostatics and carrier transport (SS=80mV/dec., DIBL=22mV/V, and μn,eff>5,500 cm2/V-s at 300k). Short-channel device with Lg = 40 nm also exhibit excellent electrostatic integrity of SS = 105 mV/dec., and DIBL = 150 mV/V, together with gm-max = 2 mS/μm at VDS = 0.5 V. This record performance is achieved by using a low Dit and Al2O3/HfO2 gate stack with EOT ∼ 1-nm, optimized selective S/D regrowth with MOCVD, and GL process.

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BT - Digest of Technical Papers - Symposium on VLSI Technology

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Shin CS, Park WK, Shin S, Cho Y, Ko DH, Kim TW et al. Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s. In Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc. 2014. 6894351. (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2014.6894351