Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm2/V-s

C. S. Shin, W. K. Park, Sh Shin, Yd Cho, Dh Ko, T. W. Kim, D. H. Koh, Hm Kwon, R. J.W. Hill, P. Kirsch, W. Maszara, D. H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

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Engineering & Materials Science