Sub-60nm Si tunnel field effect transistors with Ion >100 μA/μm

Wei Yip Loh, Kanghoon Jeon, Chang Yong Kang, Jungwoo Oh, Pratik Patel, Casey Smith, Joel Barnett, Chanro Park, Tsu Jae King Liu, Hsing Huang Tseng, Prashant Majhi, Raj Jammy, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Citations (Scopus)

Abstract

Si-tunneling field effect transistors (TFETs) with a record Ion >100 μA/μm and high Ion/Ioff ratio (> 105) at Vds=1V are reported. Using an optimal spike and millisec flash anneal coupled with an engineered source-gate overlap through a gate-last process, Si TFETshave been demonstrated with 10 to 1000 times greater current than previously reported. The devices exhibit negative differential resistance and temperature dependencies consistent with band-to-band tunneling and current characteristics in excellent agreement with 2D TCAD simulations.

Original languageEnglish
Title of host publication2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
Pages162-165
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 15
Event2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, Spain
Duration: 2010 Sep 142010 Sep 16

Publication series

Name2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Other

Other2010 European Solid State Device Research Conference, ESSDERC 2010
CountrySpain
CitySevilla
Period10/9/1410/9/16

Fingerprint

tunnels
field effect transistors
spikes
flash
ions
simulation
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Loh, W. Y., Jeon, K., Kang, C. Y., Oh, J., Patel, P., Smith, C., ... Hu, C. (2010). Sub-60nm Si tunnel field effect transistors with Ion >100 μA/μm. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 (pp. 162-165). [5618418] (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010). https://doi.org/10.1109/ESSDERC.2010.5618418
Loh, Wei Yip ; Jeon, Kanghoon ; Kang, Chang Yong ; Oh, Jungwoo ; Patel, Pratik ; Smith, Casey ; Barnett, Joel ; Park, Chanro ; Liu, Tsu Jae King ; Tseng, Hsing Huang ; Majhi, Prashant ; Jammy, Raj ; Hu, Chenming. / Sub-60nm Si tunnel field effect transistors with Ion >100 μA/μm. 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. pp. 162-165 (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010).
@inproceedings{1319deed4d064cdea886f2d4d0a607e0,
title = "Sub-60nm Si tunnel field effect transistors with Ion >100 μA/μm",
abstract = "Si-tunneling field effect transistors (TFETs) with a record Ion >100 μA/μm and high Ion/Ioff ratio (> 105) at Vds=1V are reported. Using an optimal spike and millisec flash anneal coupled with an engineered source-gate overlap through a gate-last process, Si TFETshave been demonstrated with 10 to 1000 times greater current than previously reported. The devices exhibit negative differential resistance and temperature dependencies consistent with band-to-band tunneling and current characteristics in excellent agreement with 2D TCAD simulations.",
author = "Loh, {Wei Yip} and Kanghoon Jeon and Kang, {Chang Yong} and Jungwoo Oh and Pratik Patel and Casey Smith and Joel Barnett and Chanro Park and Liu, {Tsu Jae King} and Tseng, {Hsing Huang} and Prashant Majhi and Raj Jammy and Chenming Hu",
year = "2010",
month = "12",
day = "15",
doi = "10.1109/ESSDERC.2010.5618418",
language = "English",
isbn = "9781424466610",
series = "2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010",
pages = "162--165",
booktitle = "2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010",

}

Loh, WY, Jeon, K, Kang, CY, Oh, J, Patel, P, Smith, C, Barnett, J, Park, C, Liu, TJK, Tseng, HH, Majhi, P, Jammy, R & Hu, C 2010, Sub-60nm Si tunnel field effect transistors with Ion >100 μA/μm. in 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010., 5618418, 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010, pp. 162-165, 2010 European Solid State Device Research Conference, ESSDERC 2010, Sevilla, Spain, 10/9/14. https://doi.org/10.1109/ESSDERC.2010.5618418

Sub-60nm Si tunnel field effect transistors with Ion >100 μA/μm. / Loh, Wei Yip; Jeon, Kanghoon; Kang, Chang Yong; Oh, Jungwoo; Patel, Pratik; Smith, Casey; Barnett, Joel; Park, Chanro; Liu, Tsu Jae King; Tseng, Hsing Huang; Majhi, Prashant; Jammy, Raj; Hu, Chenming.

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 162-165 5618418 (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Sub-60nm Si tunnel field effect transistors with Ion >100 μA/μm

AU - Loh, Wei Yip

AU - Jeon, Kanghoon

AU - Kang, Chang Yong

AU - Oh, Jungwoo

AU - Patel, Pratik

AU - Smith, Casey

AU - Barnett, Joel

AU - Park, Chanro

AU - Liu, Tsu Jae King

AU - Tseng, Hsing Huang

AU - Majhi, Prashant

AU - Jammy, Raj

AU - Hu, Chenming

PY - 2010/12/15

Y1 - 2010/12/15

N2 - Si-tunneling field effect transistors (TFETs) with a record Ion >100 μA/μm and high Ion/Ioff ratio (> 105) at Vds=1V are reported. Using an optimal spike and millisec flash anneal coupled with an engineered source-gate overlap through a gate-last process, Si TFETshave been demonstrated with 10 to 1000 times greater current than previously reported. The devices exhibit negative differential resistance and temperature dependencies consistent with band-to-band tunneling and current characteristics in excellent agreement with 2D TCAD simulations.

AB - Si-tunneling field effect transistors (TFETs) with a record Ion >100 μA/μm and high Ion/Ioff ratio (> 105) at Vds=1V are reported. Using an optimal spike and millisec flash anneal coupled with an engineered source-gate overlap through a gate-last process, Si TFETshave been demonstrated with 10 to 1000 times greater current than previously reported. The devices exhibit negative differential resistance and temperature dependencies consistent with band-to-band tunneling and current characteristics in excellent agreement with 2D TCAD simulations.

UR - http://www.scopus.com/inward/record.url?scp=78649949927&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649949927&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2010.5618418

DO - 10.1109/ESSDERC.2010.5618418

M3 - Conference contribution

AN - SCOPUS:78649949927

SN - 9781424466610

T3 - 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

SP - 162

EP - 165

BT - 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

ER -

Loh WY, Jeon K, Kang CY, Oh J, Patel P, Smith C et al. Sub-60nm Si tunnel field effect transistors with Ion >100 μA/μm. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 162-165. 5618418. (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010). https://doi.org/10.1109/ESSDERC.2010.5618418