Abstract
In this paper we describe a new superblock management scheme to overcome the problem of increased erase operations, that results from increasing the degree of interleaving of memory banks in flash memory based storage devices. To improve performance, superblock management is used to increase the degree of linear inter-leaving of flash memory banks. However, increased interleaving may significantly increase the number of erase operations, thus decreasing device lifetime. The proposed management scheme efficiently separates hot and cold data into two different sub-groups, dramatically increasing the efficiency of superblock merging. According to our simulation results, the number of erase operations decreases by around 27.3 percent, which is enough to significantly lengthen overall device lifetime. Read performance is only slightly degraded by our approach.
| Original language | English |
|---|---|
| Pages (from-to) | 297-303 |
| Number of pages | 7 |
| Journal | IEICE Electronics Express |
| Volume | 6 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2009 Mar 25 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
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Sub-grouped superblock management for high-performance flash storages. / Park, Jung Wook; Park, Gi Ho; Weems, Charles; Kim, Shin-Dug.
In: IEICE Electronics Express, Vol. 6, No. 6, 25.03.2009, p. 297-303.Research output: Contribution to journal › Article
TY - JOUR
T1 - Sub-grouped superblock management for high-performance flash storages
AU - Park, Jung Wook
AU - Park, Gi Ho
AU - Weems, Charles
AU - Kim, Shin-Dug
PY - 2009/3/25
Y1 - 2009/3/25
N2 - In this paper we describe a new superblock management scheme to overcome the problem of increased erase operations, that results from increasing the degree of interleaving of memory banks in flash memory based storage devices. To improve performance, superblock management is used to increase the degree of linear inter-leaving of flash memory banks. However, increased interleaving may significantly increase the number of erase operations, thus decreasing device lifetime. The proposed management scheme efficiently separates hot and cold data into two different sub-groups, dramatically increasing the efficiency of superblock merging. According to our simulation results, the number of erase operations decreases by around 27.3 percent, which is enough to significantly lengthen overall device lifetime. Read performance is only slightly degraded by our approach.
AB - In this paper we describe a new superblock management scheme to overcome the problem of increased erase operations, that results from increasing the degree of interleaving of memory banks in flash memory based storage devices. To improve performance, superblock management is used to increase the degree of linear inter-leaving of flash memory banks. However, increased interleaving may significantly increase the number of erase operations, thus decreasing device lifetime. The proposed management scheme efficiently separates hot and cold data into two different sub-groups, dramatically increasing the efficiency of superblock merging. According to our simulation results, the number of erase operations decreases by around 27.3 percent, which is enough to significantly lengthen overall device lifetime. Read performance is only slightly degraded by our approach.
UR - http://www.scopus.com/inward/record.url?scp=65249175006&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=65249175006&partnerID=8YFLogxK
U2 - 10.1587/elex.6.297
DO - 10.1587/elex.6.297
M3 - Article
AN - SCOPUS:65249175006
VL - 6
SP - 297
EP - 303
JO - IEICE Electronics Express
JF - IEICE Electronics Express
SN - 1349-2543
IS - 6
ER -