Substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of perovskite-structured Ba(In0.5Ta0.5-xBix)O3 semiconductors

Tae Woo Kim, Su Gil Hur, Seong Ju Hwang, Hyunwoong Park, Yiseul Park, Wonyong Choi, Jin Ho Choy

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We have investigated the substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of barium indium tantalate. X-ray diffraction, X-ray absorption spectroscopic, and energy dispersive spectroscopic microprobe analyses reveal that, under oxygen atmosphere of 1 atm, pentavalent Bi ions are successfully stabilized in the octahedral site of the perovskite tantalate lattice. According to diffuse reflectance UV-vis spectroscopic analysis, the Bi substitution gives rise to the significant narrowing of band gap of barium indium tantalate even at a low Bi content of ∼5%, underscoring a high efficiency of Bi substitution in the band gap engineering. Such an effective narrowing of the band gap upon the Bi substitution would be attributable to the lowering of conduction band position due to the high electronegativity of BiV substituent. As a result of band gap engineering, the Ba(In0.5Ta0.5-xBix)O3 compounds with x ≥ 0.03 can generate photocurrents under visible light irradiation (λ > 420 nm). Based on the present experimental findings, it becomes clear that the substitution of highly electronegative p-block element like BiV ion can provide a very powerful tool for tailoring the electronic structure and physicochemical properties of wide band gap semiconductors.

Original languageEnglish
Pages (from-to)1914-1920
Number of pages7
JournalMaterials Research Bulletin
Volume42
Issue number11
DOIs
Publication statusPublished - 2007 Nov 6

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Bismuth
Perovskite
bismuth
Electronic structure
Substitution reactions
Ions
substitutes
Semiconductor materials
electronic structure
Energy gap
Indium
Barium
ions
barium
indium
engineering
Electronegativity
Spectroscopic analysis
X ray absorption
spectroscopic analysis

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of perovskite-structured Ba(In0.5Ta0.5-xBix)O3 semiconductors",
abstract = "We have investigated the substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of barium indium tantalate. X-ray diffraction, X-ray absorption spectroscopic, and energy dispersive spectroscopic microprobe analyses reveal that, under oxygen atmosphere of 1 atm, pentavalent Bi ions are successfully stabilized in the octahedral site of the perovskite tantalate lattice. According to diffuse reflectance UV-vis spectroscopic analysis, the Bi substitution gives rise to the significant narrowing of band gap of barium indium tantalate even at a low Bi content of ∼5{\%}, underscoring a high efficiency of Bi substitution in the band gap engineering. Such an effective narrowing of the band gap upon the Bi substitution would be attributable to the lowering of conduction band position due to the high electronegativity of BiV substituent. As a result of band gap engineering, the Ba(In0.5Ta0.5-xBix)O3 compounds with x ≥ 0.03 can generate photocurrents under visible light irradiation (λ > 420 nm). Based on the present experimental findings, it becomes clear that the substitution of highly electronegative p-block element like BiV ion can provide a very powerful tool for tailoring the electronic structure and physicochemical properties of wide band gap semiconductors.",
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Substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of perovskite-structured Ba(In0.5Ta0.5-xBix)O3 semiconductors. / Kim, Tae Woo; Hur, Su Gil; Hwang, Seong Ju; Park, Hyunwoong; Park, Yiseul; Choi, Wonyong; Choy, Jin Ho.

In: Materials Research Bulletin, Vol. 42, No. 11, 06.11.2007, p. 1914-1920.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of perovskite-structured Ba(In0.5Ta0.5-xBix)O3 semiconductors

AU - Kim, Tae Woo

AU - Hur, Su Gil

AU - Hwang, Seong Ju

AU - Park, Hyunwoong

AU - Park, Yiseul

AU - Choi, Wonyong

AU - Choy, Jin Ho

PY - 2007/11/6

Y1 - 2007/11/6

N2 - We have investigated the substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of barium indium tantalate. X-ray diffraction, X-ray absorption spectroscopic, and energy dispersive spectroscopic microprobe analyses reveal that, under oxygen atmosphere of 1 atm, pentavalent Bi ions are successfully stabilized in the octahedral site of the perovskite tantalate lattice. According to diffuse reflectance UV-vis spectroscopic analysis, the Bi substitution gives rise to the significant narrowing of band gap of barium indium tantalate even at a low Bi content of ∼5%, underscoring a high efficiency of Bi substitution in the band gap engineering. Such an effective narrowing of the band gap upon the Bi substitution would be attributable to the lowering of conduction band position due to the high electronegativity of BiV substituent. As a result of band gap engineering, the Ba(In0.5Ta0.5-xBix)O3 compounds with x ≥ 0.03 can generate photocurrents under visible light irradiation (λ > 420 nm). Based on the present experimental findings, it becomes clear that the substitution of highly electronegative p-block element like BiV ion can provide a very powerful tool for tailoring the electronic structure and physicochemical properties of wide band gap semiconductors.

AB - We have investigated the substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of barium indium tantalate. X-ray diffraction, X-ray absorption spectroscopic, and energy dispersive spectroscopic microprobe analyses reveal that, under oxygen atmosphere of 1 atm, pentavalent Bi ions are successfully stabilized in the octahedral site of the perovskite tantalate lattice. According to diffuse reflectance UV-vis spectroscopic analysis, the Bi substitution gives rise to the significant narrowing of band gap of barium indium tantalate even at a low Bi content of ∼5%, underscoring a high efficiency of Bi substitution in the band gap engineering. Such an effective narrowing of the band gap upon the Bi substitution would be attributable to the lowering of conduction band position due to the high electronegativity of BiV substituent. As a result of band gap engineering, the Ba(In0.5Ta0.5-xBix)O3 compounds with x ≥ 0.03 can generate photocurrents under visible light irradiation (λ > 420 nm). Based on the present experimental findings, it becomes clear that the substitution of highly electronegative p-block element like BiV ion can provide a very powerful tool for tailoring the electronic structure and physicochemical properties of wide band gap semiconductors.

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