Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study

Amithraj Valsaraj, Leonard F. Register, Sanjay K. Banerjee, Jiwon Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Significant roadblocks to the widespread use of monolayer transition metal dichaclogenides for CMOS-logic applications are the large contact resistance and absence of reliable doping techniques. Metal contacts that pin the Fermi level within the desired band are optimal for device applications. Here, we study substitutional doping of, and various metal contacts to, monolayer MoS2 using density functional theory.

Original languageEnglish
Title of host publication2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages230-233
Number of pages4
ISBN (Electronic)9781467378581
DOIs
Publication statusPublished - 2015 Oct 5
Event20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015 - Washington, United States
Duration: 2015 Sep 92015 Sep 11

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2015-October

Conference

Conference20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
Country/TerritoryUnited States
CityWashington
Period15/9/915/9/11

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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