PZT films were sputter-deposited from a target containing 50 % excess PbO on Pt/Ti/SiO2/Si substrate at 550°C. In site of the symmetric Pt/PZT/Pt capacitor structure, fatigue behavior showed asymmetric degradation and leakage current at TE and BE showed different behavior. These electrical properties actually come from positive space charges layer due to Pb deficient layer near the bottom electrode. Through the investigation of Ti out-diffusion effects, a direct formation of PZT films in the perovskite phase with minimizing excess PbO has been realized by low temperature post-anneal (550°C) using a target containing 10 % excess PbO.
Bibliographical noteFunding Information:
This work was supported by Korea Research Foundation Grant
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics