Substrate modification for the direct formation of PZT film with perovskite structure by low temperature anneal

Soon Mok Ha, Woo Sik Kim, Hyung-Ho Park, Tae Song Kim

Research output: Contribution to journalConference article

Abstract

PZT films were sputter-deposited from a target containing 50 % excess PbO on Pt/Ti/SiO2/Si substrate at 550°C. In site of the symmetric Pt/PZT/Pt capacitor structure, fatigue behavior showed asymmetric degradation and leakage current at TE and BE showed different behavior. These electrical properties actually come from positive space charges layer due to Pb deficient layer near the bottom electrode. Through the investigation of Ti out-diffusion effects, a direct formation of PZT films in the perovskite phase with minimizing excess PbO has been realized by low temperature post-anneal (550°C) using a target containing 10 % excess PbO.

Original languageEnglish
Pages (from-to)283-288
Number of pages6
JournalFerroelectrics
Volume259
Issue number1
DOIs
Publication statusPublished - 2001 Dec 1
Event3rd Asian Meeting on Ferroelectrics, AMF-3 - Hong Kong, China
Duration: 2002 Dec 122002 Dec 15

Fingerprint

Perovskite
Substrates
Electric space charge
Leakage currents
space charge
capacitors
Electric properties
Capacitors
leakage
electrical properties
Fatigue of materials
degradation
Degradation
Temperature
Electrodes
electrodes
perovskite

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

@article{7f7fb105f2054fff98435d5a177a0095,
title = "Substrate modification for the direct formation of PZT film with perovskite structure by low temperature anneal",
abstract = "PZT films were sputter-deposited from a target containing 50 {\%} excess PbO on Pt/Ti/SiO2/Si substrate at 550°C. In site of the symmetric Pt/PZT/Pt capacitor structure, fatigue behavior showed asymmetric degradation and leakage current at TE and BE showed different behavior. These electrical properties actually come from positive space charges layer due to Pb deficient layer near the bottom electrode. Through the investigation of Ti out-diffusion effects, a direct formation of PZT films in the perovskite phase with minimizing excess PbO has been realized by low temperature post-anneal (550°C) using a target containing 10 {\%} excess PbO.",
author = "Ha, {Soon Mok} and Kim, {Woo Sik} and Hyung-Ho Park and Kim, {Tae Song}",
year = "2001",
month = "12",
day = "1",
doi = "10.1080/00150190108008749",
language = "English",
volume = "259",
pages = "283--288",
journal = "Ferroelectrics",
issn = "0015-0193",
publisher = "Taylor and Francis Ltd.",
number = "1",

}

Substrate modification for the direct formation of PZT film with perovskite structure by low temperature anneal. / Ha, Soon Mok; Kim, Woo Sik; Park, Hyung-Ho; Kim, Tae Song.

In: Ferroelectrics, Vol. 259, No. 1, 01.12.2001, p. 283-288.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Substrate modification for the direct formation of PZT film with perovskite structure by low temperature anneal

AU - Ha, Soon Mok

AU - Kim, Woo Sik

AU - Park, Hyung-Ho

AU - Kim, Tae Song

PY - 2001/12/1

Y1 - 2001/12/1

N2 - PZT films were sputter-deposited from a target containing 50 % excess PbO on Pt/Ti/SiO2/Si substrate at 550°C. In site of the symmetric Pt/PZT/Pt capacitor structure, fatigue behavior showed asymmetric degradation and leakage current at TE and BE showed different behavior. These electrical properties actually come from positive space charges layer due to Pb deficient layer near the bottom electrode. Through the investigation of Ti out-diffusion effects, a direct formation of PZT films in the perovskite phase with minimizing excess PbO has been realized by low temperature post-anneal (550°C) using a target containing 10 % excess PbO.

AB - PZT films were sputter-deposited from a target containing 50 % excess PbO on Pt/Ti/SiO2/Si substrate at 550°C. In site of the symmetric Pt/PZT/Pt capacitor structure, fatigue behavior showed asymmetric degradation and leakage current at TE and BE showed different behavior. These electrical properties actually come from positive space charges layer due to Pb deficient layer near the bottom electrode. Through the investigation of Ti out-diffusion effects, a direct formation of PZT films in the perovskite phase with minimizing excess PbO has been realized by low temperature post-anneal (550°C) using a target containing 10 % excess PbO.

UR - http://www.scopus.com/inward/record.url?scp=78649435876&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649435876&partnerID=8YFLogxK

U2 - 10.1080/00150190108008749

DO - 10.1080/00150190108008749

M3 - Conference article

VL - 259

SP - 283

EP - 288

JO - Ferroelectrics

JF - Ferroelectrics

SN - 0015-0193

IS - 1

ER -