Substrate modification for the direct formation of PZT film with perovskite structure by low temperature anneal

Soon Mok Ha, Woo Sik Kim, Hyung Ho Park, Tae Song Kim

Research output: Contribution to journalConference article

Abstract

PZT films were sputter-deposited from a target containing 50 % excess PbO on Pt/Ti/SiO2/Si substrate at 550°C. In site of the symmetric Pt/PZT/Pt capacitor structure, fatigue behavior showed asymmetric degradation and leakage current at TE and BE showed different behavior. These electrical properties actually come from positive space charges layer due to Pb deficient layer near the bottom electrode. Through the investigation of Ti out-diffusion effects, a direct formation of PZT films in the perovskite phase with minimizing excess PbO has been realized by low temperature post-anneal (550°C) using a target containing 10 % excess PbO.

Original languageEnglish
Pages (from-to)283-288
Number of pages6
JournalFerroelectrics
Volume259
Issue number1
DOIs
Publication statusPublished - 2001
Event3rd Asian Meeting on Ferroelectrics, AMF-3 - Hong Kong, China
Duration: 2002 Dec 122002 Dec 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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