Substrate temperature-dependent diffusion from CdS/ZnO:Al layer into the absorber layer in Cu(In, Ga)Se2 solar cell during the deposition of ZnO:Al window layer

Kiwoong Kim; Yeonjin Yi; Daeyeop Han; Jinchul Choi

doi:10.1007/s40042-021-00318-5

Substrate temperature-dependent diffusion from CdS/ZnO:Al layer into the absorber layer in Cu(In, Ga)Se₂ solar cell during the deposition of ZnO:Al window layer

Kiwoong Kim, Yeonjin Yi, Daeyeop Han, Jinchul Choi

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of the substrate temperature during the deposition of a ZnO:Al (AZO) window layer on the performance of Cu(In, Ga)Se₂ (CIGS) solar cells was studied. Although the structural, electrical and optical properties of separate AZO films are enhanced with higher substrate temperature, the overall performance of final CIGS solar cells is deteriorated. At higher substrate temperature, the diffusion of Cd, Zn and Al into the CIGS absorber layer was observed with secondary ion-mass spectroscopy measurements. This diffusion could form a buried p–n junction, resulting in deteriorated device characteristics.

Original language	English
Pages (from-to)	851-856
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	79
Issue number	9
DOIs	https://doi.org/10.1007/s40042-021-00318-5
Publication status	Published - 2021 Nov

Bibliographical note

Funding Information:
This study was supported by the National Research Foundation of Korea [2020R1A2C2014644, 2017R1A5A1014862 (SRC program: vdWMRC center)] and LG Display company.

Publisher Copyright:
© 2021, The Korean Physical Society.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1007/s40042-021-00318-5

Cite this

@article{600eca88049e4b1d8180a932619226c8,

title = "Substrate temperature-dependent diffusion from CdS/ZnO:Al layer into the absorber layer in Cu(In, Ga)Se2 solar cell during the deposition of ZnO:Al window layer",

abstract = "The effect of the substrate temperature during the deposition of a ZnO:Al (AZO) window layer on the performance of Cu(In, Ga)Se2 (CIGS) solar cells was studied. Although the structural, electrical and optical properties of separate AZO films are enhanced with higher substrate temperature, the overall performance of final CIGS solar cells is deteriorated. At higher substrate temperature, the diffusion of Cd, Zn and Al into the CIGS absorber layer was observed with secondary ion-mass spectroscopy measurements. This diffusion could form a buried p–n junction, resulting in deteriorated device characteristics.",

author = "Kiwoong Kim and Yeonjin Yi and Daeyeop Han and Jinchul Choi",

note = "Funding Information: This study was supported by the National Research Foundation of Korea [2020R1A2C2014644, 2017R1A5A1014862 (SRC program: vdWMRC center)] and LG Display company. Publisher Copyright: {\textcopyright} 2021, The Korean Physical Society.",

year = "2021",

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doi = "10.1007/s40042-021-00318-5",

language = "English",

volume = "79",

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T1 - Substrate temperature-dependent diffusion from CdS/ZnO:Al layer into the absorber layer in Cu(In, Ga)Se2 solar cell during the deposition of ZnO:Al window layer

AU - Kim, Kiwoong

AU - Yi, Yeonjin

AU - Han, Daeyeop

AU - Choi, Jinchul

N1 - Funding Information: This study was supported by the National Research Foundation of Korea [2020R1A2C2014644, 2017R1A5A1014862 (SRC program: vdWMRC center)] and LG Display company. Publisher Copyright: © 2021, The Korean Physical Society.

PY - 2021/11

Y1 - 2021/11

N2 - The effect of the substrate temperature during the deposition of a ZnO:Al (AZO) window layer on the performance of Cu(In, Ga)Se2 (CIGS) solar cells was studied. Although the structural, electrical and optical properties of separate AZO films are enhanced with higher substrate temperature, the overall performance of final CIGS solar cells is deteriorated. At higher substrate temperature, the diffusion of Cd, Zn and Al into the CIGS absorber layer was observed with secondary ion-mass spectroscopy measurements. This diffusion could form a buried p–n junction, resulting in deteriorated device characteristics.

AB - The effect of the substrate temperature during the deposition of a ZnO:Al (AZO) window layer on the performance of Cu(In, Ga)Se2 (CIGS) solar cells was studied. Although the structural, electrical and optical properties of separate AZO films are enhanced with higher substrate temperature, the overall performance of final CIGS solar cells is deteriorated. At higher substrate temperature, the diffusion of Cd, Zn and Al into the CIGS absorber layer was observed with secondary ion-mass spectroscopy measurements. This diffusion could form a buried p–n junction, resulting in deteriorated device characteristics.

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